STGP20NB60K N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT PRELIMINARY DATA TYPE STGP20NB60K ■ ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE(sat) IC 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat ) LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION 3 1 2 TO-220 DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ U.P.S. ■ WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuos) at TC = 25°C 40 A IC Collector Current (continuos) at TC = 100°C 20 A Collector Current (pulsed) 80 A Short Circuit Withstand 10 µs Total Dissipation at TC = 25°C 125 W ICM (■) Tsc PTOT Parameter Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature 1 W/°C –65 to 150 °C 150 °C June 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STGP20NB60K THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Thermal Resistance Case-heatsink Typ 0.5 °C/W Rthc-h ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) Parameter Collectro-Emitter Breakdown Voltage ICES Collector cut-off (V GE = 0) IGES Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 Min. Typ. Max. 600 Unit V VCE = Max Rating, TC = 25 °C 10 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ±20V , V CE = 0 ±100 nA Typ. Max. Unit 7 V 2.8 V ON (1) Symbol VGE(th) VCE(sat) Parameter Test Conditions Min. Gate Threshold Voltage VCE = VGE, IC = 250µA Collector-Emitter Saturation Voltage VGE = 15V, IC = 20 A 2.3 VGE = 15V, IC = 20 A, Tj =125°C 1.9 5 V DYNAMIC Symbol Parameter Test Conditions Min. VCE = 25 V , IC =20 A Typ. Max. Unit g fs Forward Transconductance Cies Input Capacitance C oes Output Capacitance C res Reverse Transfer Capacitance Qg Total Gate Charge Q ge Gate-Emitter Charge T.B.D. nC Qgc Gate-Collector Charge T.B.D. nC twsc Short Circuit Withstand Time VCE = 25V, f = 1 MHz, VGE = 0 VCE = 480V, IC = 20 A, VGE = 15V Vce = 0.5 BVces , VGE = 15 V, Tj = 125°C , RG = 10 Ω 8 S 1300 pF 200 pF 30 pF 90 nC µs 10 SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/6 Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 20 A RG = 10Ω , VGE = 15 V VCC= 480 V, IC = 20 A RG=10Ω VGE = 15 V,Tj = 125°C Min. Typ. Max. Unit 20 ns 70 ns 350 A/µs 300 µJ STGP20NB60K ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Parameter Test Condit ions Cross-over Time Off Voltage Rise Time Delay Time Vcc = 480 V, IC = 20 A, RGE = 10 Ω , VGE = 15 V Fall Time Min. Typ. Max. Unit 120 ns 35 ns 130 ns 80 ns Turn-off Switching Loss 0.45 mJ Ets Total Switching Loss 0.6 mJ tc Cross-over Time 190 ns 55 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Eoff(**) Ets Vcc = 480 V, IC = 20 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C 160 ns Fall Time 150 ns Turn-off Switching Loss 0.75 mJ Total Switching Loss 1.05 mJ Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/6 STGP20NB60K Fig. 1: Gate Charge test Circuit 4/6 Fig. 2: Test Circuit For Inductive Load Switching STGP20NB60K TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.027 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/6 STGP20NB60K Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6