STMICROELECTRONICS STV40NE03L-20

STV40NE03L-20
N - CHANNEL 30V - 0.014Ω - 40A - PowerSO-10
STripFET MOSFET
TYPE
V DSS
R DS( on )
ID
STV40NE03L-20
30 V
< 0.020 Ω
40 A
■
■
■
■
TYPICAL RDS(on) = 0.014 Ω
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE A 100 oC
APPLICATION ORIENTED
CHARACTERIZATION
10
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
VGS
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
30
V
Drain- gate Voltage (R GS = 20 kΩ)
30
V
± 20
V
Gate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
40
A
ID
Drain Current (continuous) at Tc = 100 C
o
28
A
Drain Current (pulsed)
160
A
80
W
0.53
W /o C
7
V/ns
I DM (•)
P tot
o
Total Dissipation at T c = 25 C
Derating F actor
dv/dt( 1 )
T st g
Tj
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
May 2000
-65 to 175
o
C
175
o
C
( 1) ISD ≤ 40 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STV40NE03L-20
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering Purpose
Max
Max
T yp
o
1.88
62.5
0.5
300
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
40
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 15V)
200
mJ
ELECTRICAL CHARACTERISTICS (TJ = -40 to 150 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
I D = 250 µA
V GS = 0
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
T c = 25 oC
Typ.
Max.
30
27
Unit
V
T c = 25 oC
V GS = ± 20 V
1
50
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
V DS = V GS
ID = 250 µA T c = 25 C
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS
V GS
V GS
V GS
ID =
ID =
ID =
ID =
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
=
=
=
=
o
10V
5V
10V
5V
20
20
20
20
A
A
A
A
Min.
Typ.
Max.
Unit
1
0.6
1.8
2.5
3.0
V
V
0.014
0.02
0.023
0.04
0.046
Ω
Ω
Ω
Ω
T c = 25 oC
o
Tc = 25 C
20
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 20 A
V GS = 0
Min.
Typ.
Max.
10
Unit
S
1850
450
160
2400
590
210
pF
pF
pF
STV40NE03L-20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 15 V
R G =4.7 Ω
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 24 V
Min.
I D = 20 A
V GS = 5 V
I D = 40 A
V GS = 5 V
Typ.
Max.
Unit
25
160
33
210
ns
ns
29
12
14
38
nC
nC
nC
Typ.
Max.
Unit
25
120
155
33
160
210
ns
ns
ns
Typ.
Max.
Unit
40
160
A
A
1.5
V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V DD = 24 V
R G =4.7 Ω
Min.
I D = 40 A
V GS = 5 V
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 40 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 40 A
V DD = 20 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
Tj = 150 o C
50
ns
0.9
µC
3.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STV40NE03L-20
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STV40NE03L-20
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STV40NE03L-20
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STV40NE03L-20
PowerSO-10 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
3.35
3.65
0.132
0.144
A1
0.00
0.10
0.000
0.004
B
0.40
0.60
0.016
0.024
c
0.35
0.55
0.013
0.022
D
9.40
9.60
0.370
0.378
D1
7.40
7.60
0.291
0.300
E
9.30
9.50
0.366
0.374
E1
7.20
7.40
0.283
0.291
E2
7.20
7.60
0.283
0.300
E3
6.10
6.35
0.240
0.250
E4
5.90
6.10
0.232
e
1.27
0.240
0.050
F
1.25
1.35
0.049
0.053
H
13.80
14.40
0.543
0.567
1.80
0.047
h
0.50
L
0.002
1.20
q
1.70
α
0
0.071
0.067
o
o
8
B
0.10 A B
10
=
E4
=
=
=
E1
=
E3
=
E2
=
E
=
=
=
H
6
=
=
1
5
e
0.25
B
SEATING
PLANE
DETAIL ”A”
A
C
M
Q
h
D
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL ”A”
α
0068039-C
7/8
STV40NE03L-20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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