STPS1045B/H ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 10 A VRRM 45 V VF (max) 0.57 V K K FEATURES AND BENEFITS n n n n NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY K A A K A A DESCRIPTION High voltage Schottky rectifier suited for Switch Mode Power Supplies and other Power Converters. Packaged in DPAK and IPAK, these devices are intended for use in high frequency circuitries where low switching losses are required. DPAK STPS1045B IPAK STPS1045H ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) / pin Parameter Value Unit Repetitive peak reverse voltage 45 V RMS forward current / pin 7 A IF(AV) Average forward current Tc = 150°C d = 0.5 10 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp = 2 µs F = 1KHz 1 A Tstg Storage temperature range - 65 to + 175 °C 175 °C 10000 V/µs Tj dV/dt Maximum junction temperature Critical rate of rise of reverse voltage May 2000 - Ed: 2B 1/5 STPS1045B/H THERMAL RESISTANCES Symbol Parameter Rth (j-c) Value Unit 3 °C/W Junction to case STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. Typ. VR = 45 V Tj = 125°C VF ** Forward voltage drop 7 Tj = 25°C IF = 10 A Tj = 125°C IF = 10 A Tj = 25°C IF = 20 A Tj = 125°C IF = 20 A 0.5 Max. Unit 100 µA 15 mA 0.63 V 0.57 0.84 0.65 0.72 * tp = 380 µs, δ < 2 % **tp = 5 ms, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) 8 IF(av)(A) δ = 0.05 7 δ = 0.1 δ = 0.2 12 δ = 0.5 Rth(j-a)=Rth(j-c) 10 6 δ=1 5 8 4 3 Rth(j-a)=70°C/W 4 T 2 T 2 1 0 Rth(j-a)=15°C/W 6 IF(av) (A) 0 1 2 3 4 5 6 7 δ=tp/T 8 9 10 tp 11 12 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). 0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 175 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 120 1.0 100 0.8 80 Tc=50°C 0.6 δ = 0.5 60 Tc=100°C 40 0.4 Tc=150°C 20 IM 0.2 2/5 δ=0.5 1E-2 T δ = 0.1 t(s) t 0 1E-3 δ = 0.2 Single pulse 1E-1 1E+0 0.0 1E-4 1E-3 tp(s) 1E-2 δ=tp/T 1E-1 tp 1E+0 STPS1045B/H Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(µA) 1000 1E+5 F=1MHz Tj=25°C Tj=150°C 1E+4 500 Tj=125°C 1E+3 Tj=100°C 1E+2 Tj=75°C 1E+1 Tj=50°C 1E+0 Tj=25°C 1E-1 200 VR(V) VR(V) 0 5 10 15 20 25 30 35 40 45 Fig. 7: Forward voltage drop versus forward current (maximum values). 100 1 2 5 10 20 50 Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm) (STPS1045B). IFM(A) Rth(j-a) (°C/W) 100.0 100 Tj=125°C (Typical values) 80 10.0 Tj=125°C Tj=25°C 60 40 1.0 20 S(Cu) (cm²) VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 0 1.0 1.2 1.4 1.6 0 2 4 6 8 10 12 14 16 18 20 3/5 STPS1045B/H PACKAGE MECHANICAL DATA IPAK DIMENSIONS REF. A E C2 B2 L2 D H L L1 B3 B6 B A1 V1 B5 G n Cooling method: by conduction (C) 4/5 C A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Millimeters Inches Min. Typ. Max. Min. 2.2 0.9 0.7 0.64 5.2 2.4 1.1 1.3 0.9 5.4 0.85 0.086 0.035 0.027 0.025 0.204 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10° Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.035 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10° STPS1045B/H PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 n Typ. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 Inches Max Min. Typ. Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.80 0.60 0° 0.031 1.00 0.023 8° 0° 0.039 8° Cooling method: by conduction (C) FOOT PRINT DIMENSIONS (in millimeters) 6.7 6.7 6.7 3 1.6 1.6 2.3 2.3 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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