STMICROELECTRONICS STPS10H100

STPS10H100CT/CG/CR/CFP
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
A1
K
2x5A
VRRM
100 V
Tj
175°C
VF (max)
0.61 V
A2
K
K
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
FOR CONVERTERS LOCATED IN CONFINED
ENVIRONMENT
LOW LEAKAGE CURRENT AT HIGH
TEMPERATURE
LOW STATIC AND DYNAMIC LOSSES AS A
RESULT OF THE SCHOTTKY BARRIER
AVALANCHE CAPABILITY SPECIFIED
A2
■
A1
A1
■
A2
K
D2PAK
I2PAK
STPS10H100CG
STPS10H100CR
■
■
DESCRIPTION
A2
A2
Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters. Packaged in TO-220AB,
TO-220FPAB, D2PAK and I2PAK.
A1
K
A1
K
TO-220AB
STPS10H100CT
TO-220FPAB
STPS10H100CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
RMS forward current
10
A
5
10
A
180
A
1
A
7200
W
- 65 to + 175
°C
175
°C
10000
V/µs
IF(AV)
Average forward
current δ = 0.5
TO-220AB
D2PAK / I2PAK
Tc = 165°C
TO-220FPAB
Tc = 160°C
per diode
per device
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
IRRM
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
PARM
Repetitive peak avalanche power
tp = 1µs
Tstg
Tj
dV/dt
* :
Storage temperature range
Tj = 25°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
July 2003 - Ed: 3F
1/7
STPS10H100CT/CG/CR/CFP
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
Junction to case
D2PAK / I2PAK
TO-220AB
Rth (c)
Rth (j-c)
Junction to case
TO-220FPAB
Rth (c)
Value
Unit
Per diode
2.2
°C/W
Total
1.3
Coupling
0.3
Per diode
4.5
Total
3.5
Coupling
2.5
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current
Tj = 25°C
Min.
VR = VRRM
Tj = 125°C
VF **
Forward voltage drop
1.3
Tj = 25°C
IF = 5 A
Tj = 125°C
0.57
Tj = 25°C
Max.
Unit
3.5
µA
4.5
mA
0.73
V
0.61
IF = 10 A
0.85
Tj = 125°C
Pulse test :
Typ.
0.66
0.71
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.51 x IF(AV) + 0.02 x IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
4.0
3.5
IF(av)(A)
PF(av)(W)
δ = 0.1
δ = 0.2
6
δ = 0.5
Rth(j-a)=Rth(j-c)
δ = 0.05
5
3.0
D²PAK/I²PAK/TO-220AB
δ=1
2.5
4
2.0
IF(av) (A)
δ=tp/T
Rth(j-a)=15°C/W
2
T
1.0
1
Tamb(°C)
tp
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
2/7
TO-220FPAB
3
1.5
0.5
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
0
0
25
50
75
100
125
150
175
STPS10H100CT/CG/CR/CFP
Fig. 3: Normalized avalanche power derating versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
120
0
1000
25
50
75
100
125
150
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode)(TO-220FPAB)
IM(A)
IM(A)
80
70
100
60
80
Tc=50°C
60
Tc=50°C
50
40
Tc=75°C
Tc=75°C
30
40
Tc=125°C
IM
20
t
0
1E-3
1E-2
1E-1
1E+0
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
1.0
0.4
t
t(s)
δ=0.5
0
1E-3
1E-2
1E-1
1E+0
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration (per
diode).(TO-220FPAB)
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
Tc=125°C
IM
10
t(s)
δ=0.5
20
0.8
δ = 0.5
0.6
δ = 0.2
0.4
T
δ = 0.1
0.2
0.0
1E-3
δ = 0.5
T
0.2
Single pulse
δ=tp/T
tp(s)
1E-2
1E-1
tp
δ = 0.2
δ = 0.1
tp(s)
Single pulse
1E+0
0.0
1E-3
1E-2
1E-1
δ=tp/T
1E+0
tp
1E+1
3/7
STPS10H100CT/CG/CR/CFP
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1E+4
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
IR(µA)
1000
F=1MHz
Tj=25°C
Tj=150°C
1E+3
Tj=125°C
1E+2
Tj=100°C
1E+1
100
1E+0
Tj=25°C
1E-1
VR(V)
1E-2
0
10
20
30
40
50
VR(V)
60
70
80
90 100
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
10
1
2
5
10
20
50
100
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
IFM(A)
Rth(j-a) (°C/W)
80
Tj=125°C
Typical values
70
60
Tj=125°C
10.0
Tj=150°C
Typical values
50
Tj=25°C
40
30
1.0
20
0.1
0.0
4/7
10
VFM(V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
S(Cu) (cm²)
0
2
4
6
8
10
12
14
16
18
20
STPS10H100CT/CG/CR/CFP
PACKAGE MECHANICAL DATA
D2PAK
DIMENSIONS
REF.
A
Millimeters
Min.
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
Max.
4.40
4.60
2.49
2.69
0.03
0.23
0.70
0.93
1.14
1.70
0.45
0.60
1.23
1.36
8.95
9.35
10.00
10.40
4.88
5.28
15.00
15.85
1.27
1.40
1.40
1.75
2.40
3.20
0.40 typ.
0°
8°
Inches
Min.
Max.
0.173
0.181
0.098
0.106
0.001
0.009
0.027
0.037
0.045
0.067
0.017
0.024
0.048
0.054
0.352
0.368
0.393
0.409
0.192
0.208
0.590
0.624
0.050
0.055
0.055
0.069
0.094
0.126
0.016 typ.
0°
8°
FOOT PRINT in millimeters
16.90
10.30
5.08
1.30
3.70
8.90
5/7
STPS10H100CT/CG/CR/CFP
PACKAGE MECHANICAL DATA
I2PAK
DIMENSIONS
REF.
A
E
c2
L2
D
L1
A1
b2
L
b1
b
c
e
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
b
0.70
0.93
0.028
0.037
b1
1.14
1.17
0.044
0.046
b2
1.14
1.17
0.044
0.046
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
PACKAGE MECHANICAL DATA
TO-220FPAB
REF.
A
B
H
Dia
L6
L2
L7
L3
L5
D
F1
L4
F2
F
G1
G
6/7
E
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
4.4
4.6
2.5
2.7
2.5
2.75
0.45
0.70
0.75
1
1.15
1.70
1.15
1.70
4.95
5.20
2.4
2.7
10
10.4
16 Typ.
28.6
30.6
9.8
10.6
2.9
3.6
15.9
16.4
9.00
9.30
3.00
3.20
Min.
Max.
0.173
0.181
0.098
0.106
0.098
0.108
0.018
0.027
0.030
0.039
0.045
0.067
0.045
0.067
0.195
0.205
0.094
0.106
0.393
0.409
0.63 Typ.
1.126
1.205
0.386
0.417
0.114
0.142
0.626
0.646
0.354
0.366
0.118
0.126
STPS10H100CT/CG/CR/CFP
PACKAGE MECHANICAL DATA
TO-220AB
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
■
■
■
■
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
Cooling method: C.
Recommended torque value: 0.55 m.N
Maximum torque value 0.70 m.N
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS10H100CT
STPS10H100CFP
STPS10H100CG
STPS10H100CG-TR
STPS10H100CR
STPS10H100CT
STPS10H100CFP
STPS10H100CG
STPS10H100CG
STPS10H100CR
TO-220AB
TO-220FPAB
D2PAK
D2PAK
I2PAK
2.20g
2.0 g
1.48g
1.48g
1.49g
50
50
50
1000
50
Tube
Tube
Tube
Tape and reel
Tube
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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