STMICROELECTRONICS STPS2L60

STPS2L60/A
®
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2A
VRRM
60 V
Tj (max)
150°C
VF (max)
0.55 V
DO-41
STPS2L60
FEATURES AND BENEFITS
■
■
■
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Axial and Surface Mount Power Schottky rectifier
suited for Switch Mode Power Supplies and high
frequency DC to DC converters. Packaged in
DO-41 and SMA, this device is intended for use in
low voltage, high frequency inverters and small
battery chargers.
SMA
STPS2L60A
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS)
RMS forward current
10
A
2
A
75
A
1600
W
- 65 to + 150
°C
150
°C
10000
V/µs
IF(AV)
Average forward current
TL = 115°C δ = 0.5
SMA
TL = 110°C δ = 0.5
DO-41
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
PARM
Repetitive peak avalanche power
tp = 1µs
Tstg
Tj
dV/dt
* :
Storage temperature range
Tj = 25°C
Maximum junction temperature *
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
July 2003 - Ed: 2A
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STPS2L60/A
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-l)
Junction to leads
Lead length = 10 mm
Value
Unit
DO-41
30
°C/W
SMA
25
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current
Tj = 25°C
Min.
Typ.
Forward voltage drop
Tj = 25°C
0.1
mA
2
10
0.60
IF = 2 A
0.51
Tj = 125°C
Tj = 25°C
Unit
VR = 60V
Tj = 100°C
VF *
Max.
V
0.55
0.77
IF = 4 A
0.62
Tj = 125°C
0.67
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.43 x IF(AV) + 0.06 x IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(AV)(W)
IF(AV)(A)
1.4
δ = 0.1
1.3
δ = 0.2
2.2
δ = 0.5
Rth(j-a)=Rth(j-I)
2.0
δ = 0.05
1.2
1.8
1.1
DO-41
1.6
δ=1
1.0
SMA
0.9
1.4
0.8
1.2
Rth(j-a)=100°C/W
0.7
1.0
0.6
0.8
0.5
0.4
0.6
T
0.3
T
0.4
0.2
δ=tp/T
IF(AV)(A)
0.1
δ=tp/T
0.2
tp
tp
Tamb(°C)
0.0
0.0
0.0
2/6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
25
50
75
100
125
150
STPS2L60/A
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
0
1000
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values)
(DO-41).
25
50
75
100
125
150
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMA).
IM(A)
IM(A)
10
10
9
9
8
8
7
7
Ta=25°C
6
6
Ta=25°C
5
5
Ta=75°C
4
4
3
3
2
Ta=125°C
IM
1
t
2
Ta=125°C
t
t(s)
δ=0.5
0
0
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 6-1: Relative variation of thermal impedance
junction to ambient versus pulse duration (DO-41).
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 6-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (SMA).
Zth(j-a)/Rth(j-a)
Zth(j-a)/Rth(j-a)
1.0
1.0
0.9
0.9
0.8
0.8
0.7
0.6
IM
1
t(s)
δ=0.5
Ta=75°C
0.7
0.6
δ = 0.5
0.5
δ = 0.5
0.5
0.4
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.3
T
0.2
0.1
Single pulse
tp(s)
δ=tp/T
tp
0.0
1.E-01
0.1
δ = 0.2
T
δ = 0.1
Single pulse
tp(s)
δ=tp/T
tp
0.0
1.E+00
1.E+01
1.E+02
1.E+03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
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STPS2L60/A
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
C(pF)
1.E+05
1000
F=1MHz
VOSC=30mV
Tj=25°C
Tj=150°C
1.E+04
Tj=125°C
Tj=100°C
1.E+03
Tj=75°C
1.E+02
100
Tj=50°C
Tj=25°C
1.E+01
VR(V)
VR(V)
10
1.E+00
0
10
20
30
40
50
1
60
Fig. 9: Forward voltage drop versus forward
current (low level, maximum values).
10
100
Fig. 10: Thermal resistance versus lead length
(DO-41).
IFM(A)
Rth(°C/W)
120
10
Tj=125°C
(maximum values)
9
Rth(j-a)
100
8
7
80
Tj=125°C
(typical values)
6
5
60
Tj=25°C
(maximum values)
4
Rth(j-I)
40
3
2
20
1
VFM(V)
Lleads(mm)
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
5
1.6
Fig. 11-1: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35µm) (SMA).
10
15
20
25
Fig. 11-2: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, Cu: 35µm) (DO-41).
Rth(j-)(°C/W)
Rth(j-)(°C/W)
130
100
120
90
110
80
100
90
70
80
60
70
50
60
50
40
40
30
30
20
20
10
S(Cu)(cm²)
10
S(Cu)(cm²)
0
0
0.0
4/6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
6
7
8
9
10
STPS2L60/A
PACKAGE MECHANICAL DATA
SMA (JEDEC DO-214AC)
DIMENSIONS
E1
REF.
D
E
A1
A2
C
L
b
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
FOOT PRINT DIMENSIONS (in millimeters)
1.65
1.45
2.40
1.45
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STPS2L60/A
PACKAGE MECHANICAL DATA
DO-41 plastic
C
A
C
O
/ B
O
/D
O
/D
DIMENSIONS
REF.
■
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
1.102
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS2L60
STPS2L60
DO-41
0.34g
2000
Ammopack
STPS2L60RL
STPS2L60
DO-41
0.34g
5000
Tape & Reel
STPS2L60A
S26
SMA
0.068 g
5000
Tape & Reel
EPOXY MEETS UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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