STPS1L60/A ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 1A VRRM 60 V Tj (max) 150°C VF (max) 0.56 V DO-41 STPS1L60 FEATURES AND BENEFITS ■ ■ ■ NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Axial and Surface Mount Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-41 and SMA, this device is intended for use in low voltage, high frequency inverters and small battery chargers. SMA STPS1L60A ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) RMS forward current 10 A 1 A 40 A 1200 W - 65 to + 150 °C 150 °C 10000 V/µs IF(AV) Average forward current TL = 130°C δ = 0.5 SMA TL = 120°C δ = 0.5 DO-41 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal PARM Repetitive peak avalanche power tp = 1µs Tstg Tj dV/dt * : Storage temperature range Tj = 25°C Maximum junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 5A 1/6 STPS1L60/A THERMAL RESISTANCES Symbol Parameter Rth(j-a) Junction to ambient Rth(j-l) Lead length = 10 mm Junction to leads Lead length = 10 mm Value Unit DO-41 100 °C/W SMA 120 DO-41 45 SMA 30 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25°C Min. Typ. Forward voltage drop Tj = 25°C 50 µA 5 mA 0.57 V 1.5 IF = 1 A 0.56 Tj = 100°C 0.5 Tj = 125°C Tj = 25°C Unit VR = 60V Tj = 100°C VF * Max. 0.54 0.75 IF = 2 A 0.68 Tj = 100°C 0.6 Tj = 125°C 0.66 Pulse test : * tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 0.44 x IF(AV) + 0.12 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ = 0.5). IF(AV)(A) PF(AV)(W) 1.2 0.8 δ = 0.1 δ = 0.2 Rth(j-a)=Rth(j-I) δ = 0.5 1.0 δ = 0.05 SMA 0.6 0.8 DO-41 Rth(j-a)=120°C/W δ=1 Rth(j-a)=100°C/W 0.6 0.4 0.4 T 0.2 T 0.2 δ=tp/T IF(AV)(A) 0.0 0.0 2/6 0.2 0.4 0.6 0.8 1.0 tp δ=tp/T 1.2 Tamb(°C) tp 0.0 0 25 50 75 100 125 150 STPS1L60/A Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(°C) tp(µs) 0.001 0.01 0.1 1 0 10 100 0 1000 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (DO-41). 25 50 75 100 125 150 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). IM(A) IM(A) 8 8 7 7 6 6 Ta=25°C 5 5 Ta=25°C 4 Ta=50°C 3 4 3 Ta=100°C 2 Ta=50°C 2 IM IM Ta=100°C 1 1 t t t(s) δ=0.5 t(s) δ=0.5 0 0 1.E-03 1.E-02 1.E-01 1.E+00 Fig. 6-1: Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41). 1.E-03 Zth(j-a)/Rth(j-a) 0.9 0.9 0.8 0.8 0.7 0.7 0.6 δ = 0.5 0.5 δ = 0.5 0.5 0.4 0.4 0.3 δ = 0.2 T 0.2 1.E+00 Zth(j-a)/Rth(j-a) 1.0 0.3 1.E-01 Fig. 6-2: Relative variation of thermal impedance junction to ambient versus pulse duration (SMA). 1.0 0.6 1.E-02 0.2 δ = 0.1 0.1 Single pulse tp(s) 0.0 1.E-01 1.E+00 1.E+01 δ=tp/T 1.E+02 0.1 tp δ = 0.2 T δ = 0.1 Single pulse tp(s) 0.0 1.E+03 1.E-02 1.E-01 1.E+00 δ=tp/T 1.E+01 tp 1.E+02 3/6 STPS1L60/A Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). Fig. 8: Junction capacitance versus reverse voltage applied (typical values). IR(mA) C(pF) 1E+1 200 Tj=125°C F=1MHz Tj=25°C Tj=100°C 1E+0 100 1E-1 50 1E-2 Tj=25°C 20 1E-3 VR(V) VR(V) 10 1E-4 0 5 10 15 20 25 30 35 40 45 50 55 60 Fig. 9-1: Forward voltage drop versus forward current (low level, maximum values) (DO-41). 1 10 100 Fig. 9-2: Forward voltage drop versus forward current (high level, maximum values) (SMA). IFM(A) IFM(A) 2.0 10 1.8 Tj=100°C Tj=100°C 1.6 1.4 Tj=25°C 5 Tj=25°C 1.2 1.0 0.8 0.6 2 0.4 0.2 VFM(V) VFM(V) 0.0 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, Cu: 35µm) (SMA). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 11: Thermal resistance versus lead length (DO-41). Rth(°C/W) Rth(j-)(°C/W) 120 140 Rth(j-a) 100 120 100 80 80 Rth(j-I) 60 60 40 40 20 20 S(Cu)(cm²) Lleads(mm) 0 0 1 2 3 4 5 0 5 4/6 10 15 20 25 STPS1L60/A PACKAGE MECHANICAL DATA SMA (JEDEC DO-214AC) DIMENSIONS E1 REF. D E A1 A2 C L b Millimeters Inches Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 FOOT PRINT DIMENSIONS (in millimeters) 1.65 1.45 2.40 1.45 5/6 STPS1L60/A PACKAGE MECHANICAL DATA DO-41 plastic C A C O / B O /D O /D DIMENSIONS REF. ■ Millimeters Inches Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 B 2.04 2.71 0.080 0.107 C 28 1.102 Ordering type Marking Package Weight Base qty Delivery mode STPS1L60 Partnumber cathode ring DO-41 0.34g 2000 Ammopack STPS1L60RL Partnumber cathode ring DO-41 0.34g 5000 Tape & Reel STPS1L60A GB6 SMA 0.068 g 5000 Tape & Reel EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. 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