STMICROELECTRONICS STPS30150CW

STPS30150C
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
150 V
Tj
175°C
VF (max)
0.75 V
A1
K
A2
K
FEATURES AND BENEFITS
■
■
■
■
■
A2
A2
HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
INSULATED PACKAGE: TO-220FPAB
Insulating voltage: 2000V DC
Capacitance: 45pF
AVALANCHE CAPABILITY SPECIFIED
K
A1
A1
D2PAK
STPS30150CG
TO-220FPAB
STPS30150CFP
A2
K
A1
A2
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
K
A1
TO-220AB
STPS30150CT
TO-247
STPS30150CW
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
150
V
IF(RMS)
RMS forward current
30
A
15
A
IF(AV)
Average forward current TO-220FPAB
Tc = 120°C
2
δ = 0.5
TO-220AB/D PAK Tc = 155°C
per diode
per device
TO-247
30
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM
Repetitive peak avalanche power
tp = 1µs
Tstg
Tj
dV/dt
* :
Storage temperature range
220
A
10500
W
- 65 to + 175
°C
175
°C
10000
V/µs
Tj = 25°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
February 2004 - Ed: 7
1/7
STPS30150C
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c)
Junction to case
Rth (c)
Value
Unit
°C/W
TO-220FPAB
Per diode
Total
4
3.3
TO-220AB/D2PAK
Per diode
Total
1.6
0.85
TO-247
Per diode
Total
1.5
0.8
TO-220FPAB
Coupling
2.6
2
TO-220AB/D PAK
Coupling
0.1
TO-247
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current
Tj = 25°C
Min.
Typ.
VR = VRRM
Tj = 125°C
VF **
Forward voltage drop
Tj = 25°C
IF = 15 A
Tj = 125°C
IF = 15 A
Tj = 25°C
IF = 30 A
Tj = 125°C
IF = 30 A
0.69
Max.
Unit
6.5
µA
8
mA
0.92
V
0.75
1
0.8
0.86
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
Pulse test :
To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.0073 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(AV)(A)
PF(AV)(W)
18
14
δ = 0.1
12
δ = 0.2
δ = 0.5
Rth(j-a)=Rth(j-c)
16
δ = 0.05
14
10
δ=1
12
8
10
6
8
4
Rth(j-a)=Rth(j-c)
T
4
2
IF(AV)(A)
0
1
2
3
4
5
6
7
8
9
δ=tp/T
tp
10 11 12 13 14 15 16 17 18
2
δ=tp/T
0
0
2/7
TO-220FP
Rth(j-a)=15°C/W
6
T
0
TO-220AB / TO-247 / D2PAK
Tamb(°C)
tp
25
50
75
100
125
150
175
STPS30150C
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
0
1000
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D2PAK).
25
50
75
100
125
150
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220FPAB).
IM(A)
IM(A)
225
140
130
200
120
110
175
100
150
90
125
Tc=50°C
80
Tc=50°C
70
100
Tc=75°C
60
50
75
Tc=75°C
40
Tc=125°C
50
IM
30
Tc=125°C
t
t
10
t(s)
δ=0.5
t(s)
δ=0.5
0
0
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB, TO-247, D2PAK).
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220FPAB)
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
IM
20
25
δ = 0.5
0.6
δ = 0.5
0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.4
0.3
T
0.2
0.2
Single pulse
0.1
1.E-02
T
δ = 0.1
0.1
tp(s)
δ=tp/T
0.0
1.E-03
δ = 0.2
1.E-01
tp(s)
Single pulse
tp
0.0
1.E+00
1.E-03
1.E-02
1.E-01
δ=tp/T
1.E+00
tp
1.E+01
3/7
STPS30150C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
C(pF)
IR(µA)
1000
1E+5
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=175°C
1E+4
Tj=150°C
1E+3
Tj=125°C
100
1E+2
Tj=100°C
1E+1
1E+0
Tj=25°C
VR(V)
VR(V)
1E-1
10
0
25
50
75
100
125
150
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
1
5
2
10
20
50
100
200
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy
printed circuit board, copper thickness: 35µm)
(TO-220FPAB).
IFM(A)
Rth(j-a)(°C/W)
100.0
80
Tj=125°C
(maximum values)
70
60
10.0
50
Tj=125°C
(typical values)
40
Tj=25°C
(maximum values)
30
1.0
20
10
S(Cu)(cm²)
VFM(V)
0.1
0
0.0
4/7
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
30
35
40
STPS30150C
PACKAGE MECHANICAL DATA
D2PAK
DIMENSIONS
REF.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
V2
0.40 typ.
0°
8°
0.016 typ.
0°
8°
FOOT PRINT DIMENSIONS (in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
5/7
STPS30150C
PACKAGE MECHANICAL DATA
TO-220AB
DIMENSIONS
REF.
Millimeters
Min.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
Max.
4.40
4.60
1.23
1.32
2.40
2.72
0.49
0.70
0.61
0.88
1.14
1.70
1.14
1.70
4.95
5.15
2.40
2.70
10
10.40
16.4 typ.
13
14
2.65
2.95
15.25
15.75
6.20
6.60
3.50
3.93
2.6 typ.
3.75
3.85
Inches
Min.
Max.
0.173
0.181
0.048
0.051
0.094
0.107
0.019
0.027
0.024
0.034
0.044
0.066
0.044
0.066
0.194
0.202
0.094
0.106
0.393
0.409
0.645 typ.
0.511
0.551
0.104
0.116
0.600
0.620
0.244
0.259
0.137
0.154
0.102 typ.
0.147
0.151
PACKAGE MECHANICAL DATA
TO-220FPAB
REF.
A
B
H
Dia
L6
L2
L7
L3
L5
D
F1
L4
F2
F
G1
G
6/7
E
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.70
0.018
0.027
0.75
1
0.030
0.039
1.15
1.70
0.045
0.067
1.15
1.70
0.045
0.067
4.95
5.20
0.195
0.205
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
16 Typ.
0.63 Typ.
28.6
30.6
1.126
1.205
9.8
10.6
0.386
0.417
2.9
3.6
0.114
0.142
15.9
16.4
0.626
0.646
9.00
9.30
0.354
0.366
3.00
3.20
0.118
0.126
STPS30150C
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3 2.00
2.40 0.078
0.094
F4 3.00
3.40 0.118
0.133
G
10.90
0.429
H 15.45
15.75 0.608
0.620
L 19.85
20.15 0.781
0.793
L1 3.70
4.30 0.145
0.169
L2
18.50
0.728
L3 14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5°
5°
V2
60°
60°
Dia. 3.55
3.65 0.139
0.143
REF.
V
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
■
■
■
Cooling method : C
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Ordering Type
Marking
Package
Weight
Base qty
Delivery mode
STPS30150CT
STPS30150CT
TO-220AB
2g
50
Tube
STPS30150CFP
STPS30150CFP
TO-220FPAB
1.9 g
50
Tube
STPS30150CW
STPS30150CW
TO-247
STPS30150CG
STPS30150CG-TR
■
E
=
STPS30150CG
STPS30150CG
4.4 g
30
Tube
2
1.48 g
50
Tube
2
1.48 g
1000
Tape & reel
D PAK
D PAK
Epoxy meets UL94, V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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