2N2102 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signal and medium power applications in military and industrial equipments. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 120 V V CEO Collector-emitter Voltage (I B = 0) 65 V V CER Collector-emitter Voltage (R BE ≤ 10 Ω) 80 V V EBO Emitter-base Voltage (I C = 0) 7 V Collector Current 1 A Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C 1 5 W W – 65 to 200 °C IC Pt o t T s t g, T j January 1989 Storage and Junction Temperature 1/4 2N2102 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 35 175 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 2 2 nA µA 5 nA I CBO Collector Cutoff Current (I E = 0) V CB = 60 V V CB = 60 V I E BO Emitter Cutoff Current (I C = 0) VE B = 5 V Collector-base Breakdown Voltage (I E = 0) I C = 100 µA 120 V ( su s)* Collector-emitter Sustaining Voltage (I B = 0) I C = 30 mA 65 V V CE (s at )* Collector-emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.5 V VB E (s at )* Base-emitter Saturation Voltage I C = 150 mA I B = 15 mA 1.1 V V ( BR) V CEO CBO h F E* DC Current Gain IC IC IC IC IC IC hfe High Frequency Current Gain I C = 50 mA f = 20 MHz NF Noise Figure I C = 300 µA BW = 1 Hz V CE V CE V CE V CE V CE V CE = = = = = = 10 10 10 10 10 10 V V V V V V V CE = 10 V 10 20 35 40 25 10 120 6 V CE = 10 V f = 1 KHz R G = 510 Ω 8 dB C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V 15 pF C EBO Emitter-base Capacitance IC = 0 f = 1 MHz V EB = 0.5 V 80 pF * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/4 = 10 µA = 100 µA = 10 mA = 150 mA = 500 mA =1A T am b = 150 °C 2N2102 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 3/4 2N2102 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4