STMICROELECTRONICS THD200FI

THD200FI

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR
MONITORS
3
2
1
DESCRIPTION
The
THD200FI
is
manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The THD series is designed for use in horizontal
deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V CBO
Collector-Base Voltage (IE = 0)
1500
V
V CEO
Collector-Emitter Voltage (I B = 0)
700
V
V EBO
Emitter-Base Voltage (I C = 0)
10
V
Collector Current
10
A
Collector Peak Current (tp < 5 ms)
20
A
IC
I CM
IB
Parameter
Base Current
I BM
Base Peak Current (t p < 5 ms)
P t ot
Total Dissipation at T c = 25 C
T stg
Tj
o
St orage Temperature
Max. Operating Junction Temperature
December 1999
5
A
10
A
57
W
-65 to 150
o
C
150
o
C
1/7
THD200FI
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
2.2
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
I EBO
Parameter
Test Cond ition s
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I C = 0)
Min.
Typ .
Tj = 125 o C
Max.
Un it
0.2
2
mA
mA
100
µA
I C = 100 mA
700
V
Emitter-Base Voltage
(I B = 0)
I E = 10 mA
10
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 7 A
IB = 1.5 A
1.5
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
IC = 7 A
IB = 1.5 A
1.3
V
DC Current G ain
IC = 7 A
IC = 7 A
VCE = 5 V
VCE = 5 V
V EBO
h FE∗
ts
tf
RESISTIVE LO AD
Storage Time
Fall T ime
V CC = 400 V
I B1 = 1.5 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 7 A
I B1 = 1.5 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 7 A
I B1 = 1.5 A
2/7
IC = 7 A
IB2 = 3.5 A
f = 31250 Hz
IB2 = -3.5 A
π

V c eflybac k = 1200 sin 106 t
5

f = 64 KHz
IB2 = -3.5 A
 π 6
V c eflybac k = 1200 sin 10  t

5
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
o
Tj = 100 C
6.5
4
13
2.1
140
V
V
3.1
210
µs
ns
3.5
320
µs
ns
1.7
215
µs
ns
THD200FI
Safe Operating Area
Thermal Impedance
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
THD200FI
Power Losses at 32 KHz
Power Losses at 64 KHz
Reverse Biased SOA
4/7
Switching Time Inductive Load at 32 KHz
(see figure 2)
Switching Time Inductive Load at 64 KHz
(see figure 2)
THD200FI
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at Tj
= 100 oC (line scan phase). On the other hand,
negative base current I B2 must be provided turn
off the power transistor (retrace phase). Most of
the dissipation, especially in the deflection
application, occurs at switch-off so it is essential
to determine the value of IB2 which minimizes
power losses, fall time tf and, consequently, Tj. A
new set of curves have been defined to give total
power losses, ts and tf as a function of IB2 at both
32 KHz and 64 KHz scanning frequencies in
order to choice the optimum negative drive. The
test circuit is illustrated in fig. 1.
Inductance L1 serves to control the slope of the
negative base current I B2 in order to recombine
the excess carriers in the collector when base
current is still present, thus avoiding any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
1
L (IC)2 = C (VCEfly)2
2
2
1
ω = 2 πf =

√
L C
Where IC = operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Switching Waveforms in a Deflection Circuit.
5/7
THD200FI
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
3.7
0.138
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
6/7
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.146
P025C/A
THD200FI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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