THD200FI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR MONITORS 3 2 1 DESCRIPTION The THD200FI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (IE = 0) 1500 V V CEO Collector-Emitter Voltage (I B = 0) 700 V V EBO Emitter-Base Voltage (I C = 0) 10 V Collector Current 10 A Collector Peak Current (tp < 5 ms) 20 A IC I CM IB Parameter Base Current I BM Base Peak Current (t p < 5 ms) P t ot Total Dissipation at T c = 25 C T stg Tj o St orage Temperature Max. Operating Junction Temperature December 1999 5 A 10 A 57 W -65 to 150 o C 150 o C 1/7 THD200FI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.2 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I C = 0) Min. Typ . Tj = 125 o C Max. Un it 0.2 2 mA mA 100 µA I C = 100 mA 700 V Emitter-Base Voltage (I B = 0) I E = 10 mA 10 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 7 A IB = 1.5 A 1.5 V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 7 A IB = 1.5 A 1.3 V DC Current G ain IC = 7 A IC = 7 A VCE = 5 V VCE = 5 V V EBO h FE∗ ts tf RESISTIVE LO AD Storage Time Fall T ime V CC = 400 V I B1 = 1.5 A ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 7 A I B1 = 1.5 A ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 7 A I B1 = 1.5 A 2/7 IC = 7 A IB2 = 3.5 A f = 31250 Hz IB2 = -3.5 A π V c eflybac k = 1200 sin 106 t 5 f = 64 KHz IB2 = -3.5 A π 6 V c eflybac k = 1200 sin 10 t 5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % o Tj = 100 C 6.5 4 13 2.1 140 V V 3.1 210 µs ns 3.5 320 µs ns 1.7 215 µs ns THD200FI Safe Operating Area Thermal Impedance Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 THD200FI Power Losses at 32 KHz Power Losses at 64 KHz Reverse Biased SOA 4/7 Switching Time Inductive Load at 32 KHz (see figure 2) Switching Time Inductive Load at 64 KHz (see figure 2) THD200FI BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at Tj = 100 oC (line scan phase). On the other hand, negative base current I B2 must be provided turn off the power transistor (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 32 KHz and 64 KHz scanning frequencies in order to choice the optimum negative drive. The test circuit is illustrated in fig. 1. Inductance L1 serves to control the slope of the negative base current I B2 in order to recombine the excess carriers in the collector when base current is still present, thus avoiding any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 ω = 2 πf = √ L C Where IC = operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. Figure 1: Inductive Load Switching Test Circuit. Figure 2: Switching Waveforms in a Deflection Circuit. 5/7 THD200FI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 3.7 0.138 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 6/7 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A THD200FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 7/7