VND10N06/VND10N06-1 VNP10N06FI/K10N06FM ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM V cl amp 60 60 60 60 V V V V R DS(on ) 0.3 0.3 0.3 0.3 Ω Ω Ω Ω I lim 10 10 10 10 A A A A 3 ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD ESD PROTECTION SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY DESCRIPTION The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. 3 2 1 1 IPAK TO-251 DPAK TO-252 3 1 ISOWATT220 2 SOT82-FM BLOCK DIAGRAM (*) (∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2. October 1997 1/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM ABSOLUTE MAXIMUM RATING Symbol Parameter Value DPAK IPAK Unit ISOW ATT 220 SO T82-FM V DS Drain-source Voltage (V in = 0) Internally Clamped V V in Input Voltage Internally Clamped V I in Input Current ± 20 mA ID Drain Current Internally Limited A IR Reverse DC O utput Current -15 A 4000 V V esd Electrostatic Discharge (C= 100 pF , R=1.5 KΩ) P to t Total Dissipation at T c = 25 C o Tj Operating Junction T emperature Tc Case Operating T emperature T st g 35 27 9 W Internally Limited o C Internally Limited o C -55 to 150 o C Storage Temperature THERMAL DATA DPAK/IPAK ISOW AT T220 SO T82-FM R t hj-ca se Thermal Resistance Junction-case Max 3.5 4.5 14 o C/W R t hj-a mb Thermal Resistance Junction-ambient Max 100 62.5 100 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V CLAMP Parameter Test Cond ition s Min. Typ . Max. Un it 50 60 70 V 1.5 V Drain-source Clamp Voltage I D = 200 mA V in = 0 VI L Input Low Level Voltage I D = 100 µA VDS = 16 V VI H Input High Level Voltage R L = 27 Ω V DD = 16 V V DS = 0.5 V 3.2 V I NCL Input-Source Reverse Clamp Voltage I in = -1 mA I in = 1 mA -1 8 I DSS Zero Input Voltage Drain Current (V in = 0) V DS = 50 V V DS < 35 V I I SS Supply Current from Input Pin V DS = 0 V V -0.3 11 V V 250 100 µA µA 150 300 µA Typ . Max. Un it 0.15 0.3 Ω V in = V IL V in = V IL Vin = 5 V ON (∗) Symb ol R DS( on) 2/14 Parameter Static Drain-source On Resistance Test Cond ition s Vi n = 7 V ID = 1 A Min. o TJ < 125 C VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symb ol C oss Parameter Output Capacitance Test Cond ition s V DS = 13 V f = 1 MHz Min. Vin = 0 Typ . Max. Un it 350 500 pF Typ . Max. Un it 1100 550 200 100 1600 900 400 200 ns ns ns ns 1.8 1.5 2.3 1.8 µs µs µs µs SWITCHING (**) Symb ol Parameter Test Cond ition s Min. t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 16 V Id = 1 A R gen = 10 Ω V gen = 7 V (see figure 3) t d(on) tr t d(of f) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall T ime V DD = 16 V Id = 1 A R gen = 1000 Ω V gen = 7 V (see figure 3) 1.2 1 1.6 1.2 Turn-on Current Slope V DD = 16 V Vi n = 7 V ID = 1 A R gen = 10 Ω 1.5 A/µs Total Input Charge V DD = 12 V ID = 1 A 13 nC (di/dt) on Qi V in = 7 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s V SD (∗) Forward O n Voltage I SD = 1 A t r r (∗∗) Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1 A di/dt = 100 A/µs o Tj = 25 C V DD = 30 V (see test circuit, figure 5) Q r r (∗∗) I RRM (∗∗) Min. V in = V IL Typ . Max. Un it 0.8 1.6 V 125 ns 0.22 µC 3.5 A PROTECTION Symb ol I lim Parameter Test Cond ition s Min. Typ . Max. Un it 6 10 15 A 12 20 µs Drain Current Limit Vi n = 7 V V DS = 13 V t dl im (∗∗) Step Response Current Limit Vi n = 7 V V DS step from 0 to 13 V T jsh (∗∗) Overtemperature Shutdown 150 o C T j rs (∗∗) Overtemperature Reset 135 o C 250 mJ E as (∗∗) Single Pulse Avalanche Energy o starting T j = 25 C V DD = 24 V V i n = 7 V R g en = 1 KΩ L = 10 mH (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (∗∗) Parameters guaranteed by design/characterization 3/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM PROTECTION FEATURES During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current (typically 150 µA) flows into the INPUT pin in order to supply the internal circuitry. During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET. In this condition, the Power MOSFET gate is set 4/14 to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current ID to Ilim whatever the INPUT pin Voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. If Tj reaches T jsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when Tj has cooled down to Tjrs VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Thermal Impedance For DPAK / IPAK Thermal Impedance For ISOWATT220 Thermal Impedance For SOT82-FM Derating Curve Output Characteristics Static Drain-Source On Resistance vs Input Voltage 5/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 6/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Voltage vs Junction Temperature 8/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 10/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 11/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 12/14 L4 P011G VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM SOT82-FM MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.85 3.05 1.122 1.200 A1 1.47 1.67 0.578 0.657 b 0.40 0.60 0.157 0.236 b1 1.4 1.6 0.551 0.630 b2 1.3 1.5 0.511 0.590 c 0.45 0.6 0.177 0.236 D 10.5 10.9 4.133 4.291 e 2.2 2.8 0.866 1.102 E 7.45 7.75 2.933 3.051 L 15.5 15.9 6.102 6.260 L1 1.95 2.35 0.767 0.925 P032R 13/14 VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 14/14