STMICROELECTRONICS VND10N06

VND10N06/VND10N06-1
VNP10N06FI/K10N06FM
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VND10N06
VND10N06-1
VNP10N06FI
VNK10N06FM
V cl amp
60
60
60
60
V
V
V
V
R DS(on )
0.3
0.3
0.3
0.3
Ω
Ω
Ω
Ω
I lim
10
10
10
10
A
A
A
A
3
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
LOGIC LEVEL INPUT THRESHOLD
ESD PROTECTION
SCHMITT TRIGGER ON INPUT
HIGH NOISE IMMUNITY
DESCRIPTION
The VND10N06, VND10N06-1, VNP10N06FI and
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
3
2
1
1
IPAK
TO-251
DPAK
TO-252
3
1
ISOWATT220
2
SOT82-FM
BLOCK DIAGRAM (*)
(∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.
October 1997
1/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
DPAK
IPAK
Unit
ISOW ATT 220
SO T82-FM
V DS
Drain-source Voltage (V in = 0)
Internally Clamped
V
V in
Input Voltage
Internally Clamped
V
I in
Input Current
± 20
mA
ID
Drain Current
Internally Limited
A
IR
Reverse DC O utput Current
-15
A
4000
V
V esd
Electrostatic Discharge (C= 100 pF ,
R=1.5 KΩ)
P to t
Total Dissipation at T c = 25 C
o
Tj
Operating Junction T emperature
Tc
Case Operating T emperature
T st g
35
27
9
W
Internally Limited
o
C
Internally Limited
o
C
-55 to 150
o
C
Storage Temperature
THERMAL DATA
DPAK/IPAK
ISOW AT T220
SO T82-FM
R t hj-ca se Thermal Resistance Junction-case
Max
3.5
4.5
14
o
C/W
R t hj-a mb Thermal Resistance Junction-ambient
Max
100
62.5
100
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V CLAMP
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
50
60
70
V
1.5
V
Drain-source Clamp
Voltage
I D = 200 mA
V in = 0
VI L
Input Low Level
Voltage
I D = 100 µA
VDS = 16 V
VI H
Input High Level
Voltage
R L = 27 Ω V DD = 16 V
V DS = 0.5 V
3.2
V I NCL
Input-Source Reverse
Clamp Voltage
I in = -1 mA
I in = 1 mA
-1
8
I DSS
Zero Input Voltage
Drain Current (V in = 0)
V DS = 50 V
V DS < 35 V
I I SS
Supply Current from
Input Pin
V DS = 0 V
V
-0.3
11
V
V
250
100
µA
µA
150
300
µA
Typ .
Max.
Un it
0.15
0.3
Ω
V in = V IL
V in = V IL
Vin = 5 V
ON (∗)
Symb ol
R DS( on)
2/14
Parameter
Static Drain-source On
Resistance
Test Cond ition s
Vi n = 7 V
ID = 1 A
Min.
o
TJ < 125 C
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symb ol
C oss
Parameter
Output Capacitance
Test Cond ition s
V DS = 13 V
f = 1 MHz
Min.
Vin = 0
Typ .
Max.
Un it
350
500
pF
Typ .
Max.
Un it
1100
550
200
100
1600
900
400
200
ns
ns
ns
ns
1.8
1.5
2.3
1.8
µs
µs
µs
µs
SWITCHING (**)
Symb ol
Parameter
Test Cond ition s
Min.
t d(on)
tr
t d(of f)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
V DD = 16 V
Id = 1 A
R gen = 10 Ω
V gen = 7 V
(see figure 3)
t d(on)
tr
t d(of f)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
V DD = 16 V
Id = 1 A
R gen = 1000 Ω
V gen = 7 V
(see figure 3)
1.2
1
1.6
1.2
Turn-on Current Slope
V DD = 16 V
Vi n = 7 V
ID = 1 A
R gen = 10 Ω
1.5
A/µs
Total Input Charge
V DD = 12 V
ID = 1 A
13
nC
(di/dt) on
Qi
V in = 7 V
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
V SD (∗)
Forward O n Voltage
I SD = 1 A
t r r (∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 1 A
di/dt = 100 A/µs
o
Tj = 25 C
V DD = 30 V
(see test circuit, figure 5)
Q r r (∗∗)
I RRM (∗∗)
Min.
V in = V IL
Typ .
Max.
Un it
0.8
1.6
V
125
ns
0.22
µC
3.5
A
PROTECTION
Symb ol
I lim
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
6
10
15
A
12
20
µs
Drain Current Limit
Vi n = 7 V
V DS = 13 V
t dl im (∗∗)
Step Response
Current Limit
Vi n = 7 V
V DS step from 0 to 13 V
T jsh (∗∗)
Overtemperature
Shutdown
150
o
C
T j rs (∗∗)
Overtemperature Reset
135
o
C
250
mJ
E as (∗∗)
Single Pulse
Avalanche Energy
o
starting T j = 25 C
V DD = 24 V
V i n = 7 V R g en = 1 KΩ L = 10 mH
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
3/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
PROTECTION FEATURES
During Normal Operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path
as soon as VIN > VIH.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC
to 50KHz. The only difference from the user’s
standpoint is that a small DC current (typically
150 µA) flows into the INPUT pin in order to
supply the internal circuitry.
During turn-off of an unclamped inductive load
the output voltage is clamped to a safe level by
an integrated Zener clamp between DRAIN pin
and the gate of the internal Power MOSFET.
In this condition, the Power MOSFET gate is set
4/14
to a voltage high enough to sustain the inductive
load current even if the INPUT pin is driven to 0V.
The device integrates an active current limiter
circuit which limits the drain current ID to Ilim
whatever the INPUT pin Voltage.
When the current limiter is active, the device
operates in the linear region, so power dissipation
may exceed the heatsinking capability. Both case
and junction temperatures increase, and if this
phase lasts long enough, junction temperature
may reach the overtemperature threshold Tjsh.
If Tj reaches T jsh, the device shuts down
whatever the INPUT pin voltage. The device will
restart automatically when Tj has cooled down to
Tjrs
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Thermal Impedance For DPAK / IPAK
Thermal Impedance For ISOWATT220
Thermal Impedance For SOT82-FM
Derating Curve
Output Characteristics
Static Drain-Source On Resistance vs Input
Voltage
5/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
7/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Switching Time Resistive Load
Switching Time Resistive Load
Current Limit vs Junction Temperature
Step Response Current Limit
Source Drain Diode Voltage vs Junction
Temperature
8/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Input Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 6: Waveforms
9/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL ”A”
L4
0068772-B
10/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
11/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
12/14
L4
P011G
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
SOT82-FM MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.85
3.05
1.122
1.200
A1
1.47
1.67
0.578
0.657
b
0.40
0.60
0.157
0.236
b1
1.4
1.6
0.551
0.630
b2
1.3
1.5
0.511
0.590
c
0.45
0.6
0.177
0.236
D
10.5
10.9
4.133
4.291
e
2.2
2.8
0.866
1.102
E
7.45
7.75
2.933
3.051
L
15.5
15.9
6.102
6.260
L1
1.95
2.35
0.767
0.925
P032R
13/14
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. ..
14/14