TOSHIBA 2SK3842

2SK3842
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIII)
2SK3842
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
•
Unit: mm
Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 93 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
•
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
ID
75
IDP
300
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
322
mJ
Avalanche current
IAR
75
A
Repetitive avalanche energy (Note 3)
EAR
12.5
Channel temperature
Tch
Storage temperature range
Tstg
DC
(Note 1)
Pulse(t <
= 1 ms)
Drain current
(Note 1)
A
JEDEC
―
JEITA
SC-97
mJ
TOSHIBA
2-9F1B
150
°C
Weight: 0.74 g (typ.)
−55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Circuit Configuration
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Max
Unit
Rth (ch-c)
1.0
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 Ω, IAR = 75 A
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.
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Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-OFF current
IDSS
VDS = 60 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
35
⎯
⎯
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 38 A
⎯
4.6
5.8
mΩ
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 38 A
46
93
⎯
S
Input capacitance
Ciss
⎯
12400
⎯
Reverse transfer capacitance
Crss
⎯
700
⎯
Output capacitance
Coss
⎯
1100
⎯
⎯
18
⎯
⎯
45
⎯
⎯
35
⎯
⎯
200
⎯
⎯
196
⎯
⎯
148
⎯
⎯
48
⎯
Drain-source breakdown voltage
Gate threshold voltage
Rise time
tr
0V
ton
Switching time
Fall time
tf
Turn-OFF time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
ID = 38 A
10 V
VGS
4.7 Ω
Turn-ON time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VOUT
RL = 0.79 Ω
Duty <
= 1%, tw = 10 μs
VDD ∼
− 30 V
VDD ∼
− 48 V, VGS = 10 V, ID = 75 A
V
pF
ns
nC
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1, Note 5)
IDR1
⎯
⎯
⎯
75
A
Pulse drain reverse current
(Note 1,Note 5)
IDRP1
⎯
⎯
⎯
300
A
Continuous drain reverse current (Note 1, Note 5)
IDR2
⎯
⎯
⎯
1
A
Pulse drain reverse current
IDRP2
⎯
⎯
⎯
4
A
(Note 1,Note 5)
Forward voltage (diode)
VDS2F
IDR1 = 75 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 75 A, VGS = 0 V,
⎯
70
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/μs
⎯
77
⎯
nC
Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
Marking
Part No. (or abbreviation code)
K3842
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SK3842
ID – VDS
100
6.0
10
5.8
8.0
5.6
Common source
Tc = 25°C
pulse test
10
5.4
60
5.2
40
5.0
20
Common source
Tc = 25°C
pulse test
6.3
7.0
160
7.0
6.5
6.5
8.0
Drain current ID (A)
Drain current ID (A)
80
ID – VDS
200
6.0
5.8
120
5.6
5.4
80
5.2
5.0
40
VGS = 4.5 V
0
0
0.4
0.8
1.2
Drain-source voltage
1.6
VGS = 4.5 V
0
2.0
0
1
VDS (V)
2
Drain-source voltage
ID – VGS
VDS (V)
Common source
VDS = 20 V
Pulse test
120
4
100
80
25
40
VDS (V)
Common source
Tc = 25°C
Pulse test
0.8
0.6
ID = 75 A
0.4
38
0.2
19
Tc = −55°C
0
0
2
4
6
Gate-source voltage
5
VDS – VGS
1.0
Drain-source voltage
Drain current ID (A)
160
3
8
0
10
0
4
VGS (V)
8
12
Gate-source voltage
16
20
VGS (V)
RDS (ON) − ID
⎪Yfs⎪ − ID
1000
100
Common source
100
10
10
100
Pulse test
(mΩ)
25
100
1
1
Common source
Tc = 25°C
Tc = −55°C
RDS (ON)
Pulse test
Drain-source ON resistance
Forward transfer admittance
⎪Yfs⎪ (S)
VDS = 20 V
10
VGS = 10 V
1
1
1000
Drain current ID (A)
10
100
1000
Drain current ID (A)
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2SK3842
RDS (ON) − Tc
ID = 75 A
38
19
6
Common source
Tc = 25°C
Pulse test
(A)
Common source
VGS = 10 V
Pulse test
8
IDR − VDS
1000
Drain reverse current IDR
Drain-source ON resistance
RDS (ON) (mΩ)
10
4
2
10
−40
0
40
Case temperature
80
120
10
1
160
0
Tc (°C)
VGS = 0 V
0.4
0.8
1.6
2.0
VDS (V)
Vth − Tc
Capacitance – VDS
5
Vth (V)
Ciss
4
10000
Gate threshold voltage
(pF)
1.2
Drain-source voltage
100000
Capacitance C
3
100
1
0
−80
5
Coss
1000
Common source
VGS = 0 V
3
2
Common source
VDS = 10 V
ID = 1 mA
Pulse test
1
Crss
f = 1 MHz
Tc = 25°C
100
0.1
1
10
Drain-source voltage
0
−80
100
−40
0
40
80
120
160
Case temperature Tc (°C)
VDS (V)
PD − Tc
Dynamic input/output characteristics
150
25
50
90
60
30
30
15
VDD = 12 V
24V
20
VGS
48V
Common source
ID = 75 A
10
10
5
VGS (V)
20
40
Gate-source voltage
VDS (V)
120
Drain-source voltage
Drain power dissipation PD (W)
VDS
Tc = 25°C
Pulse test
0
0
40
80
Case temperature
120
0
160
0
80
160
240
0
320
Total gate charge Qg (nC)
Tc (°C)
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2SK3842
rth − tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty = 0.5
0.2
0.1
0.1
PDM
Single Pulse
0.05
t
0.02
T
0.01
Duty = t/T
Rth (ch-c) = 1.0°C/W
0.01
10 μ
100 μ
1m
10 m
Pulse width
100 m
tw
1
(S)
Safe operating area
EAS – Tch
1000
500
100 μs *
ID max (pulsed) *
Drain current ID (A)
I max (continuous)
100 D
Avalanche energy EAS (mJ)
500
300
1 ms *
30
10
5
DC operation
Tc = 25°C
3
400
300
200
100
0
25
1
0.5
10
50
0.3 Curves must be derated
linearly with increase in
temperature.
1
Drain-source voltage
100
125
150
Channel temperature (initial) Tch (°C)
*: Single nonrepetitive pulse
Tc = 25°C
0.1
0.1
75
VDSS max
10
100
15 V
VDS (V)
BVDSS
IAR
0V
VDS
VDD
Test circuit
RG = 25 Ω
VDD = 25 V, L = 78 μH
5
Wave form
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
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2SK3842
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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