2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V ID 75 IDP 300 Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 322 mJ Avalanche current IAR 75 A Repetitive avalanche energy (Note 3) EAR 12.5 Channel temperature Tch Storage temperature range Tstg DC (Note 1) Pulse(t < = 1 ms) Drain current (Note 1) A JEDEC ― JEITA SC-97 mJ TOSHIBA 2-9F1B 150 °C Weight: 0.74 g (typ.) −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Circuit Configuration Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.0 °C/W Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 Ω, IAR = 75 A Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 4 1 2 3 1 2006-11-17 2SK3842 Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 35 ⎯ ⎯ Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 38 A ⎯ 4.6 5.8 mΩ Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 38 A 46 93 ⎯ S Input capacitance Ciss ⎯ 12400 ⎯ Reverse transfer capacitance Crss ⎯ 700 ⎯ Output capacitance Coss ⎯ 1100 ⎯ ⎯ 18 ⎯ ⎯ 45 ⎯ ⎯ 35 ⎯ ⎯ 200 ⎯ ⎯ 196 ⎯ ⎯ 148 ⎯ ⎯ 48 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time tr 0V ton Switching time Fall time tf Turn-OFF time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 38 A 10 V VGS 4.7 Ω Turn-ON time VDS = 10 V, VGS = 0 V, f = 1 MHz VOUT RL = 0.79 Ω Duty < = 1%, tw = 10 μs VDD ∼ − 30 V VDD ∼ − 48 V, VGS = 10 V, ID = 75 A V pF ns nC Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement. Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ⎯ ⎯ ⎯ 75 A Pulse drain reverse current (Note 1,Note 5) IDRP1 ⎯ ⎯ ⎯ 300 A Continuous drain reverse current (Note 1, Note 5) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current IDRP2 ⎯ ⎯ ⎯ 4 A (Note 1,Note 5) Forward voltage (diode) VDS2F IDR1 = 75 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 75 A, VGS = 0 V, ⎯ 70 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 50 A/μs ⎯ 77 ⎯ nC Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. Marking Part No. (or abbreviation code) K3842 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-17 2SK3842 ID – VDS 100 6.0 10 5.8 8.0 5.6 Common source Tc = 25°C pulse test 10 5.4 60 5.2 40 5.0 20 Common source Tc = 25°C pulse test 6.3 7.0 160 7.0 6.5 6.5 8.0 Drain current ID (A) Drain current ID (A) 80 ID – VDS 200 6.0 5.8 120 5.6 5.4 80 5.2 5.0 40 VGS = 4.5 V 0 0 0.4 0.8 1.2 Drain-source voltage 1.6 VGS = 4.5 V 0 2.0 0 1 VDS (V) 2 Drain-source voltage ID – VGS VDS (V) Common source VDS = 20 V Pulse test 120 4 100 80 25 40 VDS (V) Common source Tc = 25°C Pulse test 0.8 0.6 ID = 75 A 0.4 38 0.2 19 Tc = −55°C 0 0 2 4 6 Gate-source voltage 5 VDS – VGS 1.0 Drain-source voltage Drain current ID (A) 160 3 8 0 10 0 4 VGS (V) 8 12 Gate-source voltage 16 20 VGS (V) RDS (ON) − ID ⎪Yfs⎪ − ID 1000 100 Common source 100 10 10 100 Pulse test (mΩ) 25 100 1 1 Common source Tc = 25°C Tc = −55°C RDS (ON) Pulse test Drain-source ON resistance Forward transfer admittance ⎪Yfs⎪ (S) VDS = 20 V 10 VGS = 10 V 1 1 1000 Drain current ID (A) 10 100 1000 Drain current ID (A) 3 2006-11-17 2SK3842 RDS (ON) − Tc ID = 75 A 38 19 6 Common source Tc = 25°C Pulse test (A) Common source VGS = 10 V Pulse test 8 IDR − VDS 1000 Drain reverse current IDR Drain-source ON resistance RDS (ON) (mΩ) 10 4 2 10 −40 0 40 Case temperature 80 120 10 1 160 0 Tc (°C) VGS = 0 V 0.4 0.8 1.6 2.0 VDS (V) Vth − Tc Capacitance – VDS 5 Vth (V) Ciss 4 10000 Gate threshold voltage (pF) 1.2 Drain-source voltage 100000 Capacitance C 3 100 1 0 −80 5 Coss 1000 Common source VGS = 0 V 3 2 Common source VDS = 10 V ID = 1 mA Pulse test 1 Crss f = 1 MHz Tc = 25°C 100 0.1 1 10 Drain-source voltage 0 −80 100 −40 0 40 80 120 160 Case temperature Tc (°C) VDS (V) PD − Tc Dynamic input/output characteristics 150 25 50 90 60 30 30 15 VDD = 12 V 24V 20 VGS 48V Common source ID = 75 A 10 10 5 VGS (V) 20 40 Gate-source voltage VDS (V) 120 Drain-source voltage Drain power dissipation PD (W) VDS Tc = 25°C Pulse test 0 0 40 80 Case temperature 120 0 160 0 80 160 240 0 320 Total gate charge Qg (nC) Tc (°C) 4 2006-11-17 2SK3842 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 PDM Single Pulse 0.05 t 0.02 T 0.01 Duty = t/T Rth (ch-c) = 1.0°C/W 0.01 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch 1000 500 100 μs * ID max (pulsed) * Drain current ID (A) I max (continuous) 100 D Avalanche energy EAS (mJ) 500 300 1 ms * 30 10 5 DC operation Tc = 25°C 3 400 300 200 100 0 25 1 0.5 10 50 0.3 Curves must be derated linearly with increase in temperature. 1 Drain-source voltage 100 125 150 Channel temperature (initial) Tch (°C) *: Single nonrepetitive pulse Tc = 25°C 0.1 0.1 75 VDSS max 10 100 15 V VDS (V) BVDSS IAR 0V VDS VDD Test circuit RG = 25 Ω VDD = 25 V, L = 78 μH 5 Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-17 2SK3842 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-17