FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V Applications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS Compliant RDS(ON) = 500 mΩ @ VGS = 2.5 V 1S G 1 G 3 S D 2 D Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Parameter VDS VGS Drain-Source Voltage Gate-Source Voltage ID Drain Current – Continuous – Pulsed Power Dissipation (Steady State) PD (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings Unit s 20 V V ± 12 600 1000 625 446 –55 to +150 mA mW °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 200 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 280 °C/W Package Marking and Ordering Information Device Marking F ©2006 Fairchild Semiconductor Corporation FDY302NZ Rev B Device FDY302NZ Reel Size 7 ’’ Tape width 8 mm Quantity 3000 units www.fairchildsemi.com FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET JANUARY 2014 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, On Characteristics VGS = 0 V, ID = 250 µA 20 ID = 250 µA, Referenced to 25°C V 15 mV/°C 1 ± 10 ±1 µA µA µA 1.0 3 1.5 V mV/°C 0.24 0.36 0.70 0.35 1.8 0.30 0.50 1.20 1.00 Ω VDS = 16 V, VGS = 0 V VGS = ± 12 V, VDS = 0 V VGS = ± 4.5 V, VDS = 0 V (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 150 mA VGS = 4.5 V, ID=600mA, TJ = 125°C VDS = 5 V, ID = 600 mA 0.6 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, f = 1.0 MHz V GS = 0 V, 60 pF 20 pF 10 pF (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 600 mA, 6 12 ns 8 16 ns 8 16 ns 2.4 4.8 ns 0.8 1.1 nC 0.16 nC 0.26 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Continuous Drain to Source Diode Forward Current - Pusled VSD Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, IS = 150 mA IF = 600 mA, dIF/dt = 100 A/µs (Note 2) 0.7 600 mA 1000 mA 1.2 V 8 1 nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 200°C/W when mounted on a 1in2 pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY302NZ Rev B www.fairchildsemi.com FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET Electrical Characteristics 1 2.6 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 3.5V 2.5V 0.8 2.0V 0.6 0.4 0.2 2.4 VGS = 2.0V 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 3.5V 4.5V 1 0.8 0 0 0.25 0.5 0.75 0 1 0.2 Figure 1. On-Region Characteristics. 0.8 1 0.9 ID = 600mA VGS = 4.5V ID = 300mA RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.8 0.7 0.6 TA = 125oC 0.5 0.4 0.3 TA = 25oC 0.2 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 1.5 ID, DRAIN CURRENT (A) 0.4 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 25oC o TA = -55 C 1.2 125oC 0.9 0.6 0.3 VGS = 0V 0.1 TA = 125oC 0.01 25oC -55oC 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDY302NZ Rev B 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristics 100 ID = 600mA f = 1MHz VGS = 0 V 90 4 80 VDS = 5V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 10V 3 15V 2 1 Ciss 70 60 50 40 Coss 30 20 10 0 Crss 0 0 0.2 0.4 0.6 0.8 1 0 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 16 20 30 P(pk), PEAK TRANSIENT POWER (W) 1ms RDS(ON) LIMIT 1 1s 10ms 100ms 10s DC 0.1 VGS = 4.5V SINGLE PULSE RθJA = 280oC/W TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 280°C/W TA = 25°C 25 20 15 10 5 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 12 Figure 8. Capacitance Characteristics. 10 ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =280 °C/W 0.2 0.1 P(pk) 0.1 0.05 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY302NZ Rev B www.fairchildsemi.com 1000 FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristics 1.70 1.50 0.50 0.35 0.25 0.50 3 1.70 1.50 0.98 0.78 1 1.80 1.14 2 (0.15) 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 0.43 0.28 0.20 0.04 SEE DETAIL A 0.54 0.34 DETAIL A 0.10 0.00 SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY302NZ Rev B www.fairchildsemi.com FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET Dimensional Outline and Pad Layout TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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