Order this document by MSD6150/D SEMICONDUCTOR TECHNICAL DATA 3 Anode 1 2 3 CASE 29–04, STYLE 4 TO–92 (TO–226AA) Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Peak Forward Recurrent Current IF 200 mAdc IFM(surge) 500 mAdc PD(1) 625 5.0 mW mW/°C TJ, Tstg(1) – 55 to +135 °C Peak Forward Surge Current (Pulse Width = 10 µsec) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR) 70 — — Vdc Reverse Current (VR = 50 Vdc) IR — — 0.1 µAdc Forward Voltage (IF = 10 mAdc) VF — 0.80 1.0 Vdc Capacitance (VR = 0) C — 5.0 8.0 pF Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) trr — — 100 ns Breakdown Voltage (I(BR) = 100 µAdc) 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C, Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 MSD6150 TYPICAL CHARACTERISTICS Curves Applicable to Each Cathode 10 100 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) TA = 150°C TA = 85°C 10 TA = – 40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 10 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 2. Leakage Current CD, DIODE CAPACITANCE (pF) 1.75 1.5 1.25 1.0 0.75 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MSD6150 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE 3 MSD6150 Motorola reserves the right to make changes without further notice to any products herein. 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