Order this document by BS170/D SEMICONDUCTOR TECHNICAL DATA N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Symbol Value Unit VDS 60 Vdc 3 CASE 29–04, STYLE 30 TO–92 (TO–226AA) VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current(1) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 mW TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — 0.01 10 nAdc V(BR)DSS 60 90 — Vdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(Th) 0.8 2.0 3.0 Vdc Static Drain–Source On Resistance (VGS = 10 Vdc, ID = 200 mAdc) rDS(on) — 1.8 5.0 Ω ID(off) — — 0.5 µA gfs — 200 — mmhos Ciss — — 60 pF Turn–On Time (ID = 0.2 Adc) See Figure 1 ton — 4.0 10 ns Turn–Off Time (ID = 0.2 Adc) See Figure 1 toff — 4.0 10 ns OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) ON CHARACTERISTICS(2) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) SMALL– SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. v v REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 BS170 RESISTIVE SWITCHING +25 V ton Vin PULSE GENERATOR 50 Ω 125 Ω 20 dB 50 Ω ATTENUATOR 40 pF 50 Ω 1.0 MΩ TO SAMPLING SCOPE 50 Ω INPUT Vout OUTPUT V INVERTED out toff 90% 10% 90% 50% 10% INPUT Vin (Vin Amplititude 10 Volts) Figure 2. Switching Waveforms Figure 1. Switching Test Circuit 2.0 VDS = VGS ID = 1.0 mA I D(on) , DRAIN CURRENT (AMPS) VGS(th), THRESHOLD VOLTAGE 2.0 1.6 PULSE WIDTH 1.2 0.8 0.4 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 0.8 5.0 V 0.4 4.0 V 0 50 100 0 50 TJ, JUNCTION TEMPERATURE (°C) 0 150 Figure 3. VGS(th) Normalized versus Temperature 100 VGS = 10 V 9.0 V 1.6 VGS = 0 V 80 8.0 V 1.2 7.0 V 0.8 6.0 V 0.4 4.0 Figure 4. On–Region Characteristics C, CAPACITANCE (pF) I D(on) , DRAIN CURRENT (AMPS) 2.0 1.0 2.0 3.0 VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS) 60 40 Ciss 20 5.0 V Coss 4.0 V Crss 0 20 10 30 VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS) Figure 5. Output Characteristics 2 40 0 10 20 30 40 50 60 VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance versus Drain–To–Source Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data BS170 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D X X G J H V C SECTION X–X 1 N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE 3 BS170 Motorola reserves the right to make changes without further notice to any products herein. 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