SavantIC Semiconductor Product Specification BUT11AX Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A IBM Base current-peak 4 A Ptot Total power dissipation 32 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE UNIT 3.95 K/W SavantIC Semiconductor Product Specification BUT11AX Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.3 V ICES Collector cut-off current VCE=Rated VCES ;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 35 450 UNIT V Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=2.5A; IB1=- IB2=0.5A 2 0.6 µs 3.5 µs 0.6 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 BUT11AX