MITSUBISHI MGF4941CL

< Low Noise GaAs HEMT >
MGF4941CL
Micro-X type plastic package
DESCRIPTION
The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
The MGF4941CL is designed for automotive application and AEC-Q101
qualified.
Outline Drawing
FEATURES
Low noise figure
@ f=25.2GHz
NFmin. = 2.4dB (Typ.)
Fig.1
High associated gain
@ f=25.2GHz
Gs = 10.0dB (Typ.)
APPLICATION
K band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=1.5V, VGS=0V
ORDERRING INFORMATION
Tape & reel
4000pcs./reel
RoHS COMPLIANT
MGF4941CL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
ID
Gate to source voltage
-3
V
Drain current
55
mA
Total power dissipation
75
mW
Channel temperature
125
C
Storage temperature
-55 to +125
C
PT
Tch
Tstg
Parameter
(Ta=25C )
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
-3
V
(Ta=25C )
Test conditions
Limits
Unit
MIN.
TYP.
MAX
Gate to drain breakdown voltage
IG=-10A
-3
--
--
IGSS
Gate to source leakage current
--
--
50
A
IDSS
Saturated drain current
VGS=-2V,VDS=0V
VGS=0V,VDS=1.5V
15
--
60
mA
-0.1
--
-1.5
V
7.5
10.0
--
dB
--
2.4
3.8
dB
V(BR)GDO
VGS(off)
Gs
Gate to source cut-off voltage
Associated gain
VDS=1.5V,ID=500A
VDS=1.5V,
VGS=0V,f=25.2GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Jul., 2012
CSTG-14445
1
V
<Low Noise GaAs HEMT>
MGF4941CL
Micro-X type plastic package
Fig.1
3.2±0.1
(0.30)
2.6±0.1
(0.30)
Bottom
0.5±0.1
(2.3)
(2.3)
rAA
②
(0.30)
②
0.65±0.1
E
3.2±0.1
(0.30)
①
2.6±0.1
Top
③
Unit : mm
2.2±0.1
0.15±0.05
Side
1.35±0.2
1.7±0.1
① Gate
② Source
③ Drain
(GD-32)
Publication Date : Jul., 2012
2
<Low Noise GaAs HEMT>
MGF4941CL
Micro-X type plastic package
TYPICAL CHARACTERISTICS (Ta=25°C)
ID vs. VDS
ID vs. VGS
50
50
VGS=0V
Drain current, ID (mA)
Drain current, ID (mA)
VGS=-0.1V/STEP
40
30
20
10
VDS=1.5V
40
30
20
10
0
0
0
-1
-0.5
0
Gate to Source voltage, VGS(V)
1
2
3
Drain to Source voltage, VDS(V)
Publication Date : Jul., 2012
3
<Low Noise GaAs HEMT>
MGF4941CL
Micro-X type plastic package
S PARAMETERS (Ta=25C, VDS=1.5V, VGS=0V)
S11
S21
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
(mag)
0.991
0.971
0.944
0.908
0.868
0.825
0.780
0.729
0.671
0.616
0.561
0.498
0.455
0.420
0.396
0.399
0.420
0.470
0.529
0.593
0.649
0.704
0.748
0.780
0.803
0.828
(ang)
-14.6
-28.7
-42.4
-56.1
-69.0
-81.6
-94.2
-107.0
-119.5
-132.5
-146.1
-161.3
-178.0
163.4
141.2
116.5
92.5
70.7
51.5
34.3
20.1
7.7
-3.6
-13.2
-21.1
-28.6
Freq.
(GHz)
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
NFmin
(dB)
0.47
0.57
0.66
0.76
0.86
0.95
1.05
1.14
1.24
1.34
1.43
1.53
1.63
1.72
1.82
1.92
opt
(mag)
(ang)
0.81
53.2
0.74
66.4
0.67
80.7
0.59
96.3
0.52
113.0
0.46
130.8
0.40
149.6
0.35
169.5
0.31
-169.5
0.29
-147.6
0.29
-124.7
0.31
-100.9
0.35
-76.2
0.42
-50.6
0.52
-24.2
0.64
3.1
(mag)
5.674
5.559
5.412
5.273
5.104
4.936
4.791
4.635
4.480
4.352
4.245
4.116
4.066
4.021
3.932
3.810
3.680
3.491
3.293
3.087
2.862
2.637
2.411
2.188
2.037
1.885
S12
(ang)
164.4
149.7
135.5
121.4
107.9
94.7
81.7
68.7
56.3
43.9
31.7
19.4
6.9
-5.7
-18.9
-33.0
-46.8
-60.8
-74.4
-87.9
-100.8
-113.5
-125.9
-136.9
-147.1
-158.3
(mag)
0.011
0.021
0.031
0.040
0.049
0.056
0.064
0.071
0.077
0.083
0.088
0.091
0.097
0.099
0.104
0.110
0.117
0.122
0.125
0.127
0.128
0.126
0.126
0.120
0.118
0.116
Rn
(Ω)
15.0
13.5
11.5
9.0
7.0
5.5
4.5
4.0
5.0
6.5
8.5
12.0
16.5
22.5
30.5
38.5
S22
(ang)
79.7
69.1
59.8
50.5
41.8
33.4
25.4
17.1
8.5
0.6
-7.1
-16.8
-23.0
-29.5
-37.1
-44.4
-53.3
-62.7
-72.8
-82.2
-89.9
-100.4
-108.5
-117.3
-124.0
-129.7
(mag)
0.574
0.568
0.560
0.549
0.536
0.523
0.509
0.488
0.463
0.437
0.409
0.369
0.343
0.314
0.267
0.211
0.152
0.087
0.055
0.106
0.177
0.247
0.312
0.364
0.402
0.442
(ang)
-11.4
-22.4
-33.1
-43.5
-53.3
-62.5
-71.4
-80.3
-88.2
-96.1
-103.5
-110.2
-117.9
-125.1
-134.0
-147.1
-160.7
169.4
96.1
37.6
16.8
3.7
-6.3
-16.9
-23.6
-29.4
Calibration plane=2.6mm
- Recommended foot pattern;
RO4350B/Rogers (r=3.48, t=0.254mm)
Note
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our
sales offices.
Publication Date : Jul., 2012
4
<Low Noise GaAs HEMT>
MGF4941CL
Micro-X type plastic package
S PARAMETERS (Ta=25C, VDS=1.5V, IDS=10mA)
S11
S21
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
(mag)
0.992
0.974
0.951
0.920
0.884
0.845
0.805
0.758
0.704
0.650
0.596
0.535
0.492
0.456
0.432
0.432
0.453
0.499
0.551
0.612
0.663
0.708
0.749
0.777
0.797
0.821
(ang)
-14.2
-28.1
-41.5
-55.0
-67.8
-80.4
-93.0
-106.0
-118.7
-132.1
-146.2
-161.9
-179.2
161.5
138.9
114.0
90.0
68.1
49.1
32.0
17.9
5.8
-5.2
-14.6
-22.5
-29.6
Freq.
(GHz)
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
NFmin
(dB)
0.16
0.22
0.29
0.36
0.42
0.49
0.55
0.62
0.68
0.75
0.81
0.88
0.94
1.01
1.08
1.14
opt
(mag)
(ang)
0.88
51.8
0.81
59.5
0.73
67.7
0.65
76.7
0.56
86.9
0.48
98.6
0.41
112.0
0.34
127.5
0.29
145.4
0.25
165.9
0.23
-170.6
0.23
-143.8
0.25
-113.4
0.31
-79.1
0.39
-40.6
0.51
2.3
(mag)
4.930
4.850
4.737
4.638
4.517
4.395
4.292
4.184
4.075
3.984
3.913
3.820
3.789
3.759
3.678
3.559
3.423
3.229
3.027
2.823
2.603
2.390
2.179
1.974
1.833
1.696
S12
(ang)
164.8
150.3
136.4
122.5
109.1
96.0
83.0
70.0
57.4
44.9
32.4
19.7
6.8
-6.3
-20.1
-34.6
-48.9
-63.2
-77.0
-90.6
-103.5
-116.1
-128.5
-139.5
-149.7
-160.8
(mag)
0.013
0.026
0.038
0.049
0.059
0.068
0.077
0.085
0.092
0.098
0.104
0.107
0.112
0.114
0.117
0.122
0.124
0.127
0.128
0.126
0.123
0.123
0.120
0.111
0.110
0.105
Rn
(Ω)
9.0
8.5
8.0
7.0
6.0
5.0
4.5
3.5
3.5
3.5
4.0
4.5
6.0
8.5
13.0
18.0
S22
(ang)
78.3
67.8
57.9
47.8
38.3
29.3
20.6
11.3
2.1
-7.1
-15.6
-25.7
-33.3
-40.8
-49.5
-57.6
-66.6
-75.6
-85.7
-94.5
-103.3
-111.0
-119.0
-127.7
-132.9
-139.5
(mag)
0.638
0.630
0.621
0.607
0.592
0.575
0.556
0.531
0.501
0.467
0.432
0.382
0.346
0.305
0.248
0.187
0.126
0.082
0.099
0.157
0.224
0.287
0.344
0.392
0.426
0.463
(ang)
-11.9
-23.5
-34.7
-45.8
-56.2
-66.1
-75.8
-85.5
-94.4
-103.2
-111.9
-120.2
-129.1
-137.9
-149.3
-165.8
173.3
124.9
64.8
30.2
13.1
0.8
-9.2
-19.3
-25.5
-31.5
Calibration plane=2.6mm
- Recommended foot pattern;
RO4350B/Rogers (r=3.48, t=0.254mm)
Note
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our
sales offices.
Publication Date : Jul., 2012
5
<Low Noise GaAs HEMT>
MGF4941CL
Micro-X type plastic package
S PARAMETERS (Ta=25C, VDS=2.0V, IDS=10mA)
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
(mag)
0.992
0.974
0.951
0.920
0.884
0.846
0.805
0.757
0.703
0.649
0.596
0.534
0.491
0.454
0.430
0.431
0.452
0.498
0.551
0.612
0.664
0.712
0.751
0.780
0.801
0.826
(ang)
-14.3
-28.1
-41.6
-55.1
-67.9
-80.5
-93.2
-106.2
-118.9
-132.3
-146.4
-162.2
-179.5
161.1
138.6
113.8
90.1
68.3
49.2
32.3
18.0
6.2
-4.8
-14.5
-22.1
-29.4
Freq.
(GHz)
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
NFmin
(dB)
0.16
0.22
0.29
0.35
0.42
0.48
0.55
0.61
0.68
0.74
0.81
0.87
0.94
1.00
1.07
1.13
opt
(mag)
(ang)
0.89
52.3
0.82
59.7
0.74
67.5
0.65
76.1
0.57
85.9
0.49
97.1
0.41
110.2
0.34
125.3
0.29
142.8
0.25
163.1
0.23
-173.6
0.24
-146.8
0.27
-116.4
0.33
-81.9
0.42
-43.1
0.54
0.5
S11
S21
(mag)
4.869
4.789
4.680
4.579
4.461
4.342
4.242
4.137
4.029
3.942
3.872
3.784
3.753
3.727
3.650
3.538
3.408
3.222
3.029
2.827
2.614
2.406
2.192
1.986
1.843
1.703
S12
(ang)
164.7
150.3
136.3
122.5
109.1
96.0
83.0
70.0
57.4
44.9
32.4
19.7
6.8
-6.3
-20.0
-34.6
-48.8
-63.1
-77.1
-90.8
-103.8
-116.6
-129.0
-140.3
-150.6
-162.0
(mag)
0.013
0.025
0.037
0.048
0.058
0.066
0.075
0.083
0.089
0.095
0.100
0.104
0.107
0.111
0.112
0.117
0.119
0.122
0.124
0.124
0.119
0.121
0.120
0.111
0.109
0.107
Rn
(Ω)
9.5
9.0
8.0
7.0
6.0
5.0
4.5
4.0
3.5
3.5
3.5
4.0
5.5
8.0
12.5
17.5
S22
(ang)
78.3
67.7
57.8
47.7
38.4
29.3
20.5
11.4
2.0
-6.8
-15.1
-25.1
-32.5
-40.1
-48.4
-56.1
-64.9
-73.6
-83.0
-92.0
-100.2
-109.0
-116.5
-125.3
-130.6
-136.8
(mag)
0.656
0.649
0.639
0.625
0.610
0.593
0.575
0.549
0.519
0.486
0.452
0.403
0.368
0.329
0.275
0.215
0.155
0.102
0.090
0.135
0.198
0.265
0.321
0.374
0.410
0.453
(ang)
-11.8
-23.3
-34.5
-45.4
-55.7
-65.6
-75.2
-84.8
-93.6
-102.3
-110.8
-118.9
-127.8
-136.1
-146.9
-162.0
179.6
143.6
85.5
42.0
19.9
6.7
-3.9
-14.5
-21.5
-27.6
Calibration plane=2.6mm
- Recommended foot pattern;
RO4350B/Rogers (r=3.48, t=0.254mm)
Note
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our
sales offices.
Publication Date : Jul., 2012
6
<Low Noise GaAs HEMT>
MGF4941CL
Micro-X type plastic package
(Reference)
Flow
Item
Comment
Wafer Process
Wafer Test (DC)
100% Test
Visual Inspection
Chip Separation
Die / Wire bonding
Internal Visual Inspection
Sealing
Separation
DC Test, Marking
100% Test, Ta=25deg.C
RF Test (1)
S-parameter, 100% Test, Ta=25deg.C
RF Test (2)
Noise figure, Sampling Test
QAT
Taping, Shipping
Publication Date : Jul., 2012
7
<Low Noise GaAs HEMT>
MGF4941CL
Micro-X type plastic package
Keep safety first in your circuit designs!
 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire ore property damage. Remember to give due
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of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any
malfunction or mishap.
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Publication Date : Jul., 2012
8