2SC5347A Ordering number : ENA1087 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347A High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO 20 V 12 V VEBO IC 2 Junction Temperature PC Tj Storage Temperature Tstg 150 When mounted on ceramic substrate (900mm2✕0.8mm) V mA 1.3 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D0308AB MS IM TC-00001778 No. A1087-1/6 2SC5347A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Reverse Transfer Capacitance Cre Forward Transfer Gain 2 ⏐S21e⏐ NF Noise Figure Conditions Ratings min typ VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=50mA, f=1GHz VCE=5V, IC=50mA, f=1GHz 60* 3 Unit max 1.0 μA 10 μA 270* 4.7 1.3 GHz 2.0 0.9 6 8 1.8 pF pF dB 3.0 dB * : The 2SC5347A is classified by 50mA hFE as follows : Marking CZ CZ CZ Rank D E F hFE 60 to 120 90 to 180 135 to 270 Package Dimensions unit : mm (typ) 7007A-004 Top View 4.5 1.6 2.5 1.0 1 2 0.4 4.0 1.5 3 0.4 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP No. A1087-2/6 2SC5347A IC -- VCE 160 hFE -- IC 5 VCE=5V μA 1000 A 900μ A 800μ 700μA 600μA 500μA 120 100 80 400μA 300μA 60 40 200μA 100μA IB=0μA 20 0 0 2 4 6 8 100 5 1.0 2 3 5 7 10 2 3 5 7 100 Cob -- VCB 5 f=1MHz 3 Output Capacitance, Cob -- pF 5 3 2 1.0 7 5 3 2 0.1 2 1.0 7 5 3 2 0.1 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 7 0.1 2 3 5 7 1.0 3 2 5 7 10 Collector-to-Base Voltage, VCB -- V ITR08158 Cre -- VCB 5 3 VCE=5V f=1GHz 10 2 Noise Figure, NF -- dB Reverse Transfer Capacitance, Cre -- pF 3 2 ITR08159 NF -- IC 12 f=1MHz 1.0 7 5 3 2 8 6 4 2 0.1 0 7 0.1 5 3 2 7 5 3 2 1.0 7 10 Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- I 2 2 3 Collector Dissipation, PC -- W 4 2 2 3 5 7 100 2 3 ITR08162 When mounted on ceramic substrate (900mm2✕0.8mm) 1.3 6 7 10 PC -- Ta 1.4 VCE=5V f=1GHz 8 5 Collector Current, IC -- mA ITR08160 10 0 1.0 7 1.0 3 C 12 Forward Transfer Gain, ⏐S21e⏐2 -- dB 3 IT14231 VCE=5V 7 2 Collector Current, IC -- mA IT14230 fT -- IC 10 2 7 10 Collector-to-Emitter Voltage, VCE -- V Gain-Bandwidth Product, fT -- GHz 3 DC Current Gain, hFE Collector Current, IC -- mA 140 1.2 1.0 0.8 0.6 0.4 0.2 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 ITR08161 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR08163 No. A1087-3/6 2SC5347A S Parameter S11e f=100MHz to 1200MHz(100MHz Step) S21e f=100MHz to 1200MHz(100MHz Step) VCE=5V IC=50mA j50 120° j25 j10 j100 1.2GHz 0.1GHz 90° j150 VCE=5V IC=50mA VCE=5V IC=20mA 150° 60° VCE=8V IC=70mA 30° j200 j250 1.2GHz 0 --j10 10 VCE=5V IC=20mA 25 50 4 ±180° 100 150 250 500 8 12 16 20 0 VCE=8V IC=70mA --j250 --j200 --j150 0.1GHz --30° --150° --j100 --j25 --60° --120° --j50 --90° ITR08164 S12e f=100MHz to 1200MHz(100MHz Step) ITR08165 S22e f=100MHz to 1200MHz(100MHz Step) VCE=5V IC=50mA 90° 1.2GHz j50 60° 120° VCE=8V IC=70mA 150° j25 VCE=5V IC=20mA j100 j150 30° j200 j250 j10 0.1GHz 0.04 0.08 0.12 0.16 0.2 ±180° 0 0 10 --j10 --90° ITR08166 100 150 250 500 VCE=8V IC=70mA 0.1GHz V =5V CE IC=20mA --j250 --j200 --j150 --j100 --j25 --60° --120° 50 VCE=5V IC=50mA 1.2GHz --30° --150° 25 --j50 ITR08167 No. A1087-4/6 2SC5347A S Parameters (Common emitter) VCE=5V, IC=50mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.358 --141.0 24.005 105.9 0.027 68.4 0.342 --63.0 200 0.354 --165.7 12.593 93.3 0.047 72.7 0.205 --68.4 300 0.355 --176.8 8.532 86.8 0.068 74.1 0.166 --69.7 400 0.359 174.9 6.428 81.9 0.089 73.7 0.149 --72.3 500 0.359 169.3 5.293 77.6 0.110 72.8 0.145 --75.3 600 0.362 163.9 4.360 73.5 0.130 71.7 0.143 --78.6 700 0.366 158.5 3.774 69.9 0.151 70.2 0.147 --82.1 800 0.364 153.5 3.334 66.4 0.171 68.6 0.151 --85.6 900 0.368 149.8 2.995 62.9 0.191 66.7 0.158 --90.1 1000 0.370 145.3 2.725 59.4 0.210 65.1 0.166 --92.3 1100 0.373 141.5 2.494 56.5 0.230 63.0 0.170 --95.1 1200 0.377 137.6 2.307 53.0 0.248 61.4 0.177 --97.8 VCE=5V, IC=20mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.445 --115.4 21.095 113.8 0.032 59.7 0.479 --52.4 200 0.400 --149.6 11.567 97.4 0.049 63.4 0.300 --58.0 300 0.394 --165.7 7.917 89.3 0.066 67.0 0.242 --58.8 400 0.391 --176.5 5.974 82.5 0.085 68.5 0.214 --60.0 500 0.391 176.7 4.845 78.4 0.103 68.8 0.203 --62.2 600 0.392 169.4 4.065 73.9 0.122 68.6 0.199 --64.7 700 0.393 163.8 3.522 70.0 0.141 67.8 0.198 --67.9 800 0.394 158.4 3.114 66.4 0.159 67.1 0.201 --71.2 900 0.396 154.1 2.798 62.5 0.178 65.7 0.204 --74.7 1000 0.399 149.3 2.548 58.9 0.196 64.5 0.212 --78.1 1100 0.403 144.9 2.333 55.5 0.215 62.9 0.218 --81.4 1200 0.408 141.0 2.158 51.8 0.233 61.8 0.224 --84.1 VCE=8V, IC=70mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.328 --141.2 25.505 105.1 0.024 70.5 0.348 --50.8 200 0.323 --165.7 13.334 93.0 0.043 75.0 0.233 --48.9 300 0.323 --176.6 9.025 86.7 0.062 75.8 0.204 --47.0 400 0.326 175.1 6.819 81.8 0.081 75.5 0.191 --48.0 500 0.325 169.5 5.481 77.8 0.100 74.5 0.187 --50.5 600 0.328 163.6 4.612 73.7 0.119 73.4 0.185 --53.6 700 0.330 158.4 3.980 70.2 0.139 71.8 0.188 --57.3 800 0.333 153.5 3.524 66.7 0.157 70.4 0.191 --60.9 900 0.335 150.0 3.148 63.3 0.177 68.5 0.198 --65.1 1000 0.341 144.7 2.866 60.0 0.194 67.1 0.204 --69.0 1100 0.345 141.2 2.629 57.0 0.213 65.1 0.208 --72.1 1200 0.348 138.0 2.424 53.4 0.230 62.6 0.215 --75.3 No. A1087-5/6 2SC5347A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1087-6/6