2SK3833 Ordering number : ENN8016 2SK3833 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Conditions Ratings Unit VDSS VGSS 100 ±20 V ID 48 A IDP PW≤10µs, duty cycle≤1% V 192 A 2.5 W Allowable Power Dissipation PD 85 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 144 mJ Avalanche Current *2 IAV 48 A Tc=25°C *1. VDD=20V, L=100µH, IAV=48A *2. L≤100µH, 1 Pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS Conditions ID=1mA, VGS=0 Ratings min typ Unit max 100 V VDS=100V, VGS=0 1 ±10 µA µA IGSS VGS(off) VGS= ±16V, VDS=0 VDS=10V, ID=1mA 1.2 yfs RDS(on)1 VDS=10V, ID=24A 20 ID=24A, VGS=10V 26 34 mΩ RDS(on)2 Ciss ID=24A, VGS=4V 31 43 mΩ 2.6 33 V S pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 4200 Output Capacitance 300 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 250 pF Marking : K3833 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21405QA TS IM TB-00000314 No.8016-1/4 2SK3833 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min See specified Test Circuit. 30 See specified Test Circuit. 72 ns td(off) tf See specified Test Circuit. 285 ns See specified Test Circuit. Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 105 ns 79 nC 14 nC VDS=50V, VGS=10V, ID=48A IS=48A, VGS=0 18 nC 1.04 1.5 V Switching Time Test Circuit VDD=50V VIN 3.2 4.8 10V 0V 2.0 3.5 2.6 ns VDS=50V, VGS=10V, ID=48A VDS=50V, VGS=10V, ID=48A Package Dimensions unit : mm 2056A ID=24A RL=2.1Ω VIN 1.2 15.0 20.0 D VOUT PW=10µs D.C.≤1% 1.3 1.6 Unit max td(on) tr Total Gate Charge 15.6 14.0 typ G 20.0 2.0 0.6 2SK3833 1.0 2 5.45 1.4 1 0.6 P.G 1 : Gate 2 : Drain 3 : Source 5.45 SANYO : TO-3PB 3 50Ω S Unclamped Inductive Circuit ≥50Ω RG L DUT VDD V 6.0 40 30 VGS=3.0V 50 40 30 C 50 60 20 10 10 °C Tc= --25 ° 60 25° 70 4.0V Drain Current, ID -- A Drain Current, ID -- A Tc= -- 80 70 20 25°C VDS=10V 75 0V 10V 8. 80 ID -- VGS 90 °C Tc=25°C 75° C ID -- VDS 90 C 50Ω 25 15V 0V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain-to-Source Voltage, VDS -- V 4.0 4.5 IT07721 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V 4.5 5.0 IT07722 No.8016-2/4 2SK3833 RDS(on) -- VGS 25°C --25°C 20 10 5.0 6.0 7.0 8.0 9.0 Gate-to-Source Voltage, VGS -- V °C °C -25 = 10 Tc 7 75 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 25 2 °C 5 3 2 1.0 7 5 0.1 10 3 5 7 1.0 2 3 5 7 10 2 3 25 50 75 100 125 150 IT07724 IF -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 7 100 IT07725 0 7 3 2 1000 7 5 3 Coss 2 Crss 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 3.0 2.0 2 tf 100 7 tr td(on) 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 20 30 2 3 5 7 100 IT07729 40 50 60 70 80 IT07728 ASO IDP=192A 3 2 100 7 5 <10µs ID=48A DC 10 7 5 3 2 Operation in this area is limited by RDS(on). 1.0 7 5 10 µs 10 3 2 3 2 2 10 Total Gate Charge, Qg -- nC Drain Current, ID -- A 3 2 4.0 0 td(off) 3 6.0 5.0 5 7 5 7.0 IT7727 VDD=50V VGS=10V 5 8.0 0 30 SW Time -- ID 1000 1.2 IT07726 1.0 100 0 0.9 VDS=50V ID=48A 9.0 Ciss 0.6 VGS -- Qg 10 f=1MHz 5 0.3 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 10 0.1 0 --25 0.01 2 Drain Current, ID -- A Switching Time, SW Time -- ns 20 100 7 5 3 2 5 3 A Case Temperature, Tc -- °C VDS=10V 7 V 10 S= G V , 24 I D= IT07723 yfs -- ID 100 30 0 --50 10 4V S= G V , A 24 I D= °C 4.0 40 Tc=7 5 3.0 50 C 30 60 --25° Tc=75°C 40 70 25°C 50 0 2.0 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 RDS(on) -- Tc 80 ID=24A Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 s 10 10 0µ s 1m 0m ms s op era tio n Tc=25°C Single pulse 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V 2 IT07730 No.8016-3/4 2SK3833 PD -- Ta PD -- Tc 100 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 3.0 2.5 2.0 1.5 1.0 0.5 90 85 80 70 60 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07732 0 20 40 60 80 100 140 120 Case Temperature, Tc -- °C 160 IT07731 Note on usage : Since the 2SK3833 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8016-4/4