ATP103 Ordering number : ENA1623 SANYO Semiconductors DATA SHEET ATP103 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --55 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD Tc=25°C Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 V --165 A 50 W Tch 150 °C Tstg --55 to +150 °C EAS IAV 57 mJ --28 A Note : *1 VDD=--10V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VDS=--30V, VGS=0V VGS=±16V, VDS=0V Marking : ATP103 Ratings min typ max --30 Unit V --1 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network D0209PA TK IM TC-00002144 No. A1623-1/4 ATP103 Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max RDS(on)1 VDS=--10V, ID=--1mA VDS=--10V, ID=--28A ID=--28A, VGS=--10V RDS(on)2 ID=--14A, VGS=--4.5V Input Capacitance Ciss VDS=--10V, f=1MHz 2430 pF Output Capacitance Coss VDS=--10V, f=1MHz 555 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 395 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 19 ns See specified Test Circuit. 400 ns td(off) tf See specified Test Circuit. 150 ns See specified Test Circuit. 145 ns VDS=--15V, VGS=--10V, ID=--55A VDS=--15V, VGS=--10V, ID=--55A 47 nC 10 nC VDS=--15V, VGS=--10V, ID=--55A IS=--55A, VGS=0V --1.03 Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD --1.2 --2.6 45 V S 10 13 mΩ 14.5 20.5 mΩ 8.7 nC --1.5 V Package Dimensions unit : mm (typ) 7057-001 1.5 4.6 0.5 7.3 0.55 0.7 0.5 3 0.8 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 1.7 2 1 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 SANYO : ATPAK Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --28A RL=0.54Ω VIN D PW=10μs D.C.≤1% VOUT G P.G ATP103 50Ω S No. A1623-2/4 ATP103 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 ID= --14A 20 18 16 14 12 10 8 VDS= --10V Single pulse 3 °C 25 2 C 5° 10 = Tc 7 --2 °C 75 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 3 5 7 --100 20 = VGS 10 0 --25 A --28 V, I D= 25 50 75 100 125 td(off) tf 100 7 5 tr 3 td(on) 2 5 7 --1.0 2 3 5 7 --10 150 IT15231 IS -- VSD VGS=0V Single pulse 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V --1.4 IT15233 Ciss, Coss, Crss -- VDS f=1MHz 3 2 --5.0 IT15229 14 = -, ID V 5 . --4 5 3 --4.5 5 7 5 75° C --4.0 --10 V GS= IT15232 1000 7 3 --3.5 A 15 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 SW Time -- ID 2 --3.0 Case Temperature, Tc -- °C VDD= --15V VGS= --10V 10 7 --0.1 --2.5 25 0 --50 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 3 --2.0 Single pulse IT15230 | yfs | -- ID --1.5 RDS(on) -- Tc Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 --1.0 Gate-to-Source Voltage, VGS -- V 6 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 7 --0.5 30 22 Gate-to-Source Voltage, VGS -- V 0 IT15228 --28A 24 0 --2.0 Tc=25°C Single pulse 28 26 --1.8 Tc= 75°C --0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 25° C 5°C --10 --5 0 Tc= 7 --10 --20 °C --15 --30 --2 5 VGS= --3.5V --20 25° C --25 --40 --25°C --30 --50 25°C --16 . --35 --60 --4.0V Drain Current, ID -- A --40 VDS= --10V Single pulse Tc= -- --6 .0V V --8.0 --45 Drain Current, ID -- A V 5 --4. 0V --10.0 V --50 ID -- VGS --70 Tc=25°C Single pulse 25° C ID -- VDS --55 Ciss 2 1000 7 Coss Crss 5 3 2 2 Drain Current, ID -- A 3 5 7--100 2 IT15234 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT15235 No. A1623-3/4 ATP103 VGS -- Qg VDS= --15V ID= --55A 3 2 --8 --6 --4 --2 IDP= --165A --100 7 5 ID= --55A 0 5 10 15 20 25 30 35 40 Total Gate Charge, Qg -- nC PD -- Tc DC --10 7 5 Operation in this area is limited by RDS(on). 3 2 50 30 20 10 0 0 20 40 60 80 100 2 3 120 Case Temperature, Tc -- °C 140 160 IT15238 er ati on 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT15237 EAS -- Ta 120 40 op Tc=25°C Single pulse IT15236 50 PW≤10μs 1 0μ s 10 0 1m μs s --1.0 7 5 --0.1 --0.1 Avalanche Energy derating factor -- % 60 45 1 10 0ms 0m s 3 2 3 2 0 Allowable Power Dissipation, PD -- W ASO 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 Note on usage : Since the ATP103 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2009. Specifications and information herein are subject to change without notice. PS No. A1623-4/4