2SK4096LS Ordering number : ENA0774C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4096LS General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)=0.65Ω (typ.) 10V drive • Input capacitance Ciss=600pF Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 500 V ±30 V 8 A IDc*1 Limited only by maximum temperature Tch=150°C IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 7.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 32 A Allowable Power Dissipation PD 2.0 W Channel Temperature Drain Current (DC) 33 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 354 mJ Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 8 A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=8A (Fig.1) *5 L≤10mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 2SK4096LS-1E Marking Electrical Connection 6.68 3.3 2.54 3.23 K4096 LOT No. 1 2.76 12.98 15.8 15.87 2 1.47 MAX 0.8 3 1 2.54 2 3 0.5 2.54 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS http://www.sanyosemi.com/en/network/ 91212 TKIM TC-00002810/O1007 TIIM TC-00000921/51607QB TIIM TC-00000725 No. A0774-1/7 2SK4096LS Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±30V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=4A Static Drain-to-Source On-State Resistance RDS(on) ID=4A, VGS=10V Input Capacitance Ciss min typ Unit max 500 ID=10mA, VGS=0V VDS=400V, VGS=0V V 100 μA ±100 nA 3 5 2.2 4.5 V S 0.65 0.85 Ω 600 pF 130 pF 28 pF Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 18.5 ns Rise Time tr td(off) 46 ns 75 ns Turn-OFF Delay Time Fall Time VDS=30V, f=1MHz See Fig.2 tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=200V, VGS=10V, ID=8A IS=8A, VGS=0V Fig.1 Unclamped Inductive Switching Test Circuit 33 ns 24 nC 4.5 nC 14 nC 0.9 VDD=200V 10V 0V L ID=4A RL=50Ω VIN ≥50Ω RG D VOUT PW=10μs D.C.≤0.5% 2SK4096LS G VDD 50Ω V Fig.2 Switching Time Test Circuit VIN 10V 0V 1.2 2SK4096LS P.G RGS=50Ω S Ordering Information Device 2SK4096LS-1E Package Shipping memo TO-220F-3FS 50pcs./magazine Pb Free No. A0774-2/7 2SK4096LS ID -- VDS 25 ID -- VGS 25 Tc=25°C 15V 20 Tc= --25°C 20 10V 8V Drain Current, ID -- A Drain Current, ID -- A VDS=20V 15 10 25°C 75°C 15 10 5 5 6V VGS=5V 0 0 20 25 30 Drain-to-Source Voltage, VDS -- V 0 1.5 Tc=75°C 1.0 25°C --25°C 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 Gate-to-Source Voltage, VGS -- V 2 1.0 0.6 0.4 0.2 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 0 25 50 75 100 125 150 IT12330 IS -- VSD VGS=0V 1.0 7 5 3 2 0.01 0.2 3 0.6 0.8 1.0 1.2 VDD=200V VGS=10V 1.4 IT12332 Ciss, Coss, Crss -- VDS 3 5 0.4 Diode Forward Voltage, VSD -- V IT12331 SW Time -- ID 7 --25 3 2 3 2 5 =1 S VG 0.8 3 3 =4 , ID 0V 1.0 5 2 20 IT12328 A 1.2 0.1 7 5 7 2 0.1 18 1.4 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Tc 3 16 10 7 5 °C -25 =C 75° 5 14 Case Temperature, Tc -- °C C 25° 7 12 1.6 0 --50 10 VDS=10V 10 10 RDS(on) -- Tc IT12329 | yfs | -- ID 2 f=1MHz 2 1000 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.0 5.5 8 1.8 2.5 0 5.0 6 2.0 ID=4A 0.5 4 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 3.0 2 IT12327 --25°C 15 25°C 10 5°C 5 Tc=7 0 2 td (off) 100 7 5 tf tr 3 5 3 2 Coss 100 7 5 Crss 3 td(on) 2 Ciss 7 2 10 10 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT12333 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT12334 No. A0774-3/7 2SK4096LS VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 5 10 15 20 IDpack(*2)=7.1A 1.0 7 5 3 2 PD -- Ta 1.5 1.0 0.5 10μ s Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 2 3 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 5 7 10 2 3 5 7 100 2 3 5 7 IT16936 PD -- Tc 40 2.0 0μ s Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 7 5 3 2 10 1m 10 s 10 ms 0m s DC op era tio n IDc(*1)=8A IT12335 35 33 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT12337 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12338 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=32A(PW≤10μs) 0.01 1.0 25 Total Gate Charge, Qg -- nC 2.5 ASO 7 5 3 2 VDS=200V ID=8A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0774-4/7 2SK4096LS Magazine Specification 2SK4096LS-1E No. A0774-5/7 2SK4096LS Outline Drawing 2SK4096LS-1E Mass (g) Unit 1.8 mm * For reference No. A0774-6/7 2SK4096LS Note on usage : Since the 2SK4096LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No. A0774-7/7