ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns(typ.) Input Capacitance Ciss=350pF(typ.) Halogen free compliance • • ON-resistance RDS(on)=1.55Ω(typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 500 V ±30 V 5.5 A 19 A PW≤10μs, duty cycle≤1% Source-to-Drain Diode Forward Current (DC) ID IDP IS Source-to-Drain Diode Forward Current (Pulse) ISP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD Tch Tc=25°C Channel Temperature Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 93 mJ 5.5 A Drain Current (Pulse) Avalanche Current *2 5.5 A 19 A 70 W 150 °C Note : *1 VDD=99V, L=5mH, IAV=5.5A *2 L≤5mH, Single pulse (Fig.1) Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 1.5 6.5 Packing Type: TL 0.4 0.4 0.5 4 4.6 2.6 Marking 0.8 2.3 0.6 2.3 6.05 4.6 9.5 LOT No. TL Electrical Connection 0.55 0.7 3 0.1 0.5 2 1 1.7 7.3 ATP613 0.4 2,4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 SANYO : ATPAK 3 http://semicon.sanyo.com/en/network D1510QB TKIM TC-00002545 No. A1903-1/5 ATP613 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max 500 V(BR)DSS IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±30V, VDS=0V VDS=10V, ID=1mA 3 Forward Transfer Admittance | yfs | VDS=10V, ID=2.75A 1.5 Static Drain-to-Source On-State Resistance RDS(on) ID=2.75A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 14.2 ns Rise Time tr td(off) 46 ns 37.6 ns Turn-OFF Delay Time Fall Time ID=10mA, VGS=0V VDS=400V, VGS=0V V Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current μA ±100 nA 5 2.9 2.0 Ω 350 pF 68 pF 15 pF VDS=30V, f=1MHz See Fig.2 V S 1.55 tf Qg Total Gate Charge 100 20.4 ns 13.8 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=5.5A, VGS=0V 1.1 Reverse Recovery Time trr See Fig.3 60 ns Reverse Recovery Charge Qrr IS=5.5A, VGS=0V, di/dt=100A/μs 120 nC VDS=200V, VGS=10V, ID=5.5A Fig.1 Avalanche Resistance Test Circuit D ≥50Ω RG 10V 0V VIN G 1.5 V VDD=200V ID=2.75A RL=72.8Ω VIN D ATP613 VOUT PW=10μs D.C.≤0.5% VDD 50Ω nC nC Fig.2 Switching Time Test Circuit L S 10V 0V 3.2 7.6 G ATP613 P.G RGS=50Ω S Fig.3 Reverse Recovery Time Resistance Test Circuit ATP613 D 500μH G S VDD=50V Driver MOSFET No. A1903-2/5 ATP613 ID -- VDS 6 7V 2 4 6 8 10 12 14 16 18 0 20 4.0 3.5 3.0 Tc=75°C 2.0 25°C 1.5 --25°C 1.0 0.5 2 4 6 8 10 12 5°C 1.0 7 5 Tc= 3 2 --2 75° C 0.1 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 100 tf 5 td (off) 3 tr 2 10 0.1 3 5 7 1.0 25° C = V GS 1.5 1.0 0.5 --25 0 25 2 Drain Current, ID -- A 3 5 7 10 IT16207 50 75 100 125 150 IT16204 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ciss, Coss, Crss -- VDS 1.6 IT16206 f=1MHz 5 Ciss 3 2 100 Cos s 7 5 3 Crs s 2 td(on) 2 2.0 7 Ciss, Coss, Crss -- pF 3 7 =2. , ID V 0 1 1000 VDD=200V VGS=10V 5 75A 2.5 Diode Forward Voltage, VSD -- V SW Time -- ID 7 3.0 0.01 5 7 10 IT16205 Drain Current, ID -- A 1000 3.5 100 7 5 3 2 3 2 0.01 0.01 12 IT16202 4.0 Case Temperature, Tc -- °C Source Current, IS -- A C 25° 10 Single pulse 0 --50 VDS=10V 3 2 8 RDS(on) -- Tc IT16203 | yfs | -- ID 10 7 5 6 4.5 14 15 Gate-to-Source Voltage, VGS -- V 4 5.0 0 0 2 Gate-to-Source Voltage, VGS -- V ID=2.75A Single pulse 2.5 0 IT16201 RDS(on) -- VGS 4.5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4 °C 25° C --25 °C 2 5.0 Forward Transfer Admittance, | yfs | -- S 6 Tc= 75 0 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 75°C 2 6V VGS=5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0 8 C 8V 25°C Tc= 75° 10V 8 4 Tc= --25 °C 10 Drain Current, ID -- A Drain Current, ID -- A VDS=20V 15V 10 ID -- VGS 12 Tc=25°C --25 °C 12 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT16208 No. A1903-3/5 ATP613 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Total Gate Charge, Qg -- nC PD -- Tc 14 16 50 40 30 20 10 0 20 40 60 80 100 10 7 5 3 2 0μ ID=5.5A 10 1.0 7 5 3 2 0.1 7 5 3 2 120 Case Temperature, Tc -- °C 140 160 IT16211 s s 1m 10 s m s DC 0m op s er ati o Operation in this area is limited by RDS(on). n Tc=25°C 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 60 10μ 10 IT16209 70 0 IDP=19A (PW≤10μs) 0.01 Single pulse 2 3 5 7 10 1.0 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 ASO 100 7 5 3 2 VDS=200V ID=5.5A 5 7 1000 IT16710 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT16212 No. A1903-4/5 ATP613 Note on usage : Since the ATP613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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