2SK4087LS Ordering number : ENA0555E SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4087LS General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)=0.47Ω (typ.) 10V drive • Input capacitance Ciss=1200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 600 V ±30 V A IDc *1 Limited only by maximum temperature Tch=150°C 14 IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 9.2 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 52 A Allowable Power Dissipation PD 2.0 W Channel Temperature Drain Current (DC) 40 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 106 mJ 14 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=1mH, IAV=14A (Fig.1) *5 L≤1mH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 2SK4087LS-1E Marking Electrical Connection 6.68 3.3 2.54 3.23 K4087 LOT No. 1 2.76 12.98 15.8 15.87 2 1.47 MAX 0.8 3 1 2.54 2 3 0.5 2.54 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS http://www.sanyosemi.com/en/network/ 41112 TKIM TC-00002744/O1007 TIIM TC-00000930/40407QB TIIM TC-00000630/22107QB TIIM TC-00000371 No. A0555-1/7 O1712 TKIM TC-00002824 2SK4087LS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Ratings Conditions min typ Unit max 600 VDS=10V, ID=1mA 3 VDS=10V, ID=7A ID=7A, VGS=10V 4 V 100 μA ±100 nA 5 V 8 S 0.47 0.61 Ω 1200 pF Output Capacitance Coss 220 pF Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time td(on) tr 27 ns 72 ns 144 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=14A ns 46 nC 8.6 nC 26.4 IS=14A, VGS=0V nC 0.95 Fig.1 Unclamped Inductive Switching Test Circuit 1.3 V Fig.2 Switching Time Test Circuit VIN VDD=200V 10V 0V L ≥50Ω RG ID=7A RL=28Ω VIN D VOUT PW≤10μs D.C.≤1% 2SK4087LS 10V 0V 48 G VDD 50Ω 2SK4087LS P.G S 50Ω Ordering Information Device 2SK4087LS-1E Shipping memo 50pcs./magazine Pb Free ID -- VDS 35 VDS=20V 10V Drain Current, ID -- A 20 15 10 6V 5 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 25°C 25 75°C 20 15 10 5 VGS=5V 0 Tc= --25°C 35 8V 15V 25 0 ID -- VGS 40 Tc=25°C 30 Drain Current, ID -- A Package TO-220F-3FS 30 IT11753 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT11754 No. A0555-2/7 2SK4087LS RDS(on) -- VGS 2.0 1.6 1.4 1.2 1.0 Tc=75°C 0.6 25°C 0.4 --25°C 0.2 5 7 9 11 13 5 --25 2 1.0 7 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 5 75 100 125 150 IT11756 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 7 50 VGS=0V IT11757 SW Time -- ID 1000 3 25 IS -- VSD 3 2 5 3 0.1 0 3 2 °C -25 =C c ïT ï 75° 3 0.2 5 °C 25 7 0.4 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 =1 S , VG A =7 ID 0.6 0 --50 15 VDS=10V 2 0V 0.8 IT11755 | yfs | -- ID 3 1.0 Tc=7 5°C 25°C 3 1.2 --25°C 0.8 Gate-to-Source Voltage, VGS -- V 1.4 IT11758 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.8 0 RDS(on) -- Tc 1.4 ID=7A td (off) 2 100 7 tf tr 5 ïtd(on) 3 2 ïCiss 1000 7 5 Cossï 3 2 100 7 5 Cïrss 3 2 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 10 20 30 Total Gate Charge, Qg -- nC 40 50 IT11761 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V VDS=200V ID=14A 9 Gate-to-Source Voltage, VGS -- V 5 IT11759 VGS -- Qg 10 3 10 10 7 5 3 2 1.0 7 5 3 2 10μ s 10 IDc(*1)=14A 50 IT11760 ASO IDP=52A(PW≤10μs) 45 0μ s 1m DC IDpack(*2)=9.2A Operation in this area is limited by RDS(on). 0.1 7 5 3 *1. 2 Tc=25°C *2. 0.01 Single pulse 2 3 5 7 10 1.0 1 10 0ms 0m s op era tio n s Shows chip capability SANYO's ideal heat dissipation condition 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 71000 IT16815 No. A0555-3/7 2SK4087LS PD -- Ta 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT11730 EAS -- Ta 120 PD -- Tc 45 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11742 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0555-4/7 2SK4087LS Magazine Specification 2SK4087LS-1E No. A0555-5/7 2SK4087LS Outline Drawing 2SK4087LS-1E Mass (g) Unit 1.8 mm * For reference No. A0555-6/7 2SK4087LS Note on usage : Since the 2SK4087LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2012. Specifications and information herein are subject to change without notice. PS No. A0555-7/7