CPH5905 Ordering number : ENN7177A NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly. The CPH5905 contains a 2SK3557-equivalent chip and a 2SC4639-equivalent chip in one package. Drain and emitter are shared. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage VDSX VGDS 15 V --15 V IG ID 10 mA Drain Current 50 mA Allowable Power Dissipation PD 350 mW V Gate-to-Drain Voltage Gate Current Mounted on a ceramic board (600mm2✕0.8mm) [TR] Collector-to-Base Voltage VCBO 55 Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Collector Current Base Current IC ICP IB Collector Dissipation PC Mounted on a ceramic board (600mm2✕0.8mm) Total Dissipation PT Mounted on a ceramic board (600mm2✕0.8mm) Junction Temperature Tj Storage Temperature Tstg Collector Current (Pulse) 150 mA 300 mA 30 mA 350 mW 500 mW [Common Ratings] 150 °C --55 to +150 °C Marking : 1E Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005AC MS IM TB-00001552/ 22802 TS IM TA-3495 No.7177-1/6 CPH5905 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [FET] Gate-to-Drain Breakdown Voltage V(BR)GDS Gate Cutoff Current IG=--10µA, VDS=0V VGS=--10V, VDS=0V VDS=5V, ID=100µA --15 V Cutoff Voltage IGSS VGS(off) Drain Current IDSS VDS=5V, VGS=0V Forward Transfer Admittance Input Capacitance yfs Ciss VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz 2.9 pF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.0 dB Noise Figure NF --1.0 --0.4 --0.7 10.0* 24 nA --1.5 V 32.0* mA 35 mS 10.0 pF [TR] Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE DC Current Gain Gain-Bandwidth Product fT VCB=35V, IE=0A VEB=4V, IC=0A VCE=6V, IC=1mA 135 0.1 µA 0.1 µA 400 VCE=6V, IC=10mA 200 Cob VCB=6V, f=1MHz 1.7 Collector-to-Emitter Saturation Voltage VCE(sat) 0.08 0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA IC=50mA, IB=5mA 0.8 1.0 V Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=10µA, IE=0A IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0A See specified Test Circuit. Turn-ON Time ton tstg Storage Time Fall Time tf MHz pF 55 V 50 V 6 V 0.15 µs See specified Test Circuit. 0.75 µs See specified Test Circuit. 0.20 µs * : The CPH5905 is classified by IDSS as follows : (unit : mA) Rank G H IDSS 10.0 to 20.0 16.0 to 32.0 The specifications shown above are for each individual FET or a transistor. Package Dimensions unit : mm 7017-007 Electrical Connection 5 4 3 3 0.2 2.8 0.05 1 2 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base Top view 0.6 1.6 0.6 5 4 0.15 0.4 1 2 0.95 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base 0.7 0.9 0.2 2.9 SANYO : CPH5 Switching Time Test Circuit PC=20µs D.C.≤1% INPUT 50Ω IB1 OUTPUT IB2 1kΩ RL 2kΩ VR + 220µF VBE= --5V + 470µF VCC=20V 10IB1= --10IB2=IC=10mA No.7177-2/6 CPH5905 ID -- VDS 20 [FET] ID -- VDS 20 [FET] VGS=0V 16 V V GS=0 12 Drain Current, ID -- mA Drain Current, ID -- mA 16 --0.1V --0.2V 8 --0.3V 4 --0.6V --0.2V 8 --0.3V --0.4V 4 --0.4V --0.7V --0.1V 12 --0.5V --0.5V --0.6V --0.7V 0 0 0.4 0 0.8 1.2 1.6 2.0 Drain-to-Source Voltage, VDS -- V 2.4 ID -- VGS 22 4 6 8 10 Drain-to-Source Voltage, VDS -- V 12 ITR02750 ID -- VGS [FET] 16 VDS=5V 20 2 0 ITR02749 [FET] VDS=5V IDSS=15mA 14 6 6 4 C °C 8 75° 8 10 --2 5 10 20 m 15 A mA 10 mA S =3 0m 12 Ta = A 14 12 25 °C Drain Current, ID -- mA 16 ID S Drain Current, ID -- mA 18 4 2 2 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, yfs -- mS A 30m mA =15 I DSS 3 2 10 7 5 3 --0.8 --0.6 --0.4 --0.2 Gate-to-Source Voltage, VGS -- V [FET] VDS=5V f=1kHz 5 --1.0 IT04224 yfs -- ID 7 0 --1.2 0.2 yfs -- IDSS 100 Forward Transfer Admittance, yfs -- mS 0 --1.4 0.2 ITR02752 [FET] VDS=5V VGS=0V f=1kHz 7 5 3 2 10 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- mA 3 5 7 [FET] 3 5 Drain Current, IDSS -- mA 2 IT04226 10 IT04225 VGS(off) -- IDSS 3 Ciss -- VDS 3 [FET] VDS=5V ID=100µA VGS=0V f=1MHz 2 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V 0 1.0 7 5 3 2 10 7 5 3 7 10 2 3 5 Drain Current, IDSS -- mA IT04227 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT04228 No.7177-3/6 CPH5905 Crss -- VDS [FET] VDS=0V f=1MHz 7 3 2 1.0 6 4 2 7 2 1.0 3 5 7 2 10 0 0.01 Drain-to-Source Voltage, VDS -- V 6 4 2 2 3 Frequency, f -- kHz 5 7100 ITR02758 PD -- Ta [FET] 400 5 7 1.0 2 3 5 7 10 2 3 350 M ou 300 nt ed on 250 ac er am ic 200 bo ar 150 d (6 00 m m2 ✕ 100 0. 8m m ) 50 0 5 7 1.0 2 3 Signal Source Resistance, Rg -- kΩ 5 71000 ITR02759 IC -- VCE [TR] 0µ A µA 450 2 3 5 7 100 A 400µ 2 3 0 35 200 A 150µA 20 100µA 15 50µA 10 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 120 140 8 [TR] 35µA 30µA 6 25µA 20µA 4 15µA 1.0 10µA 5µA IB=0µA 0 5 10 15 20 25 30 35 40 45 Collector-to-Emitter Voltage, VCE -- V [TR] hFE -- IC 2 VCE=6V 160 IT09866 50µA 45µA 40µA ITR10376 IC -- VBE 160 100 0 0.9 Collector-to-Emitter Voltage, VCE -- V 80 2 IB=0µA 0 60 IC -- VCE 10 30 25 40 12 300µA 250µA 40 20 Ambient Temperature, Ta -- °C 350µA 50 45 5 7 10 Collector Current, IC -- mA 2 3 50 0 5 7 0.1 [FET] VDS=5V ID=1mA f=1kHz 8 0 0.1 2 3 IT04229 NF -- Rg 10 3 Allowable Power Dissipation, PD -- mW 7 Noise Figure, NF -- dB [FET] VDS=5V ID=1mA Rg=1kΩ 8 5 5 Collector Current, IC -- mA NF -- f 10 Noise Figure, NF -- dB Reverse Transfer Capacitance, Crss -- pF 10 50 ITR10377 [TR] VCE=6V 140 DC Current Gain, hFE 100 80 60 Ta=75 °C 25°C --25°C Collector Current, IC -- mA 1000 120 40 20 0.2 0.4 0.6 0.8 5 Ta=75°C 3 2 25°C --25°C 100 7 5 0 0 7 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 1.4 ITR10378 3 0.1 2 3 5 1.0 2 3 5 10 2 3 Collector Current, IC -- mA 5 100 2 3 ITR10379 No.7177-4/6 CPH5905 f T -- IC [TR] VCE=6V 3 3 2 100 7 5 2 10 7 5 3 2 3 1.0 2 3 5 7 2 10 3 5 7 Collector Current, IC -- mA 2 100 ITR10380 Cob -- VCB 5 5 [TR] 10 7 5 3 2 2 1.0 1.0 2 1.0 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V VBE(sat) -- IC 10 7 100 ITR10382 1.0 7 5 3 2 0.1 5°C Ta=7 °C --25 7 5 2 3 5 7 2 10 25 3 °C 5 7 Collector Current, IC -- mA 2 100 ITR10383 PC -- Ta [TR] 400 IC / IB=10 7 [TR] Collector Dissipation, PC -- mW 350 5 3 2 1.0 Ta= --25°C 7 25°C 75°C 5 3 1.0 7 10 ITR10381 [TR] 2 2 1.0 5 7 5 IC / IB=10 3 7 5 3 VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 Emitter-to-Base Voltage, VEB -- V f=1MHz 3 Output Capacitance, Cob -- pF [TR] f=1MHz 5 2 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Cib -- VEB 5 Input Capacitance, Cib -- pF Gain-Bandwidth Product, fT -- MHz 7 M ou 300 nt 250 ed on ac er am ic 200 bo ar 150 d (6 00 m 100 m2 ✕ 0. 8m m ) 50 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR10384 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09867 No.7177-5/6 CPH5905 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.7177-6/6