SANYO VEC2901

VEC2901
Ordering number : ENN8198
VEC2901
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon MOSFET
Switching, Flash Applications
Features
•
•
Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.
Ultrasmall package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[TR]
Collector-to-Base Voltage
VCBO
100
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
V
IC
5
A
Collector Current
Collector Current (Pulse)
ICP
PC
Collector Dissipation
Junction Temperature
Tj
Storage Temperature
Tstg
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
8
A
1.1
W
150
°C
--55 to +150
°C
30
V
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Drain Current (Pulse)
VDSS
VGSS
±10
V
ID
150
mA
600
mA
Allowable Power Dissipation
IDP
PD
Channel Temperature
Storage Temperature
PW≤10µs, duty cycle≤1%
0.25
W
Tch
150
°C
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
VCB=40V, IE=0
100
nA
VEB=4V, IC=0
100
nA
VCE=2V, IC=500mA
250
VCE=10V, IC=500mA
VCB=10V, f=1MHz
400
330
MHz
26
IC=1.6A, IB=53mA
IC=2A, IB=40mA
Marking : AA
pF
55
110
mV
75
150
mV
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505EA TS IM TB-00001130 No.8198-1/6
VEC2901
Continued from preceding page.
Parameter
Symbol
Base-to-Emitter Saturation Voltage
Ratings
Conditions
min
typ
Unit
max
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
IC=2A, IB=40mA
IC=10µA, IE=0
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
Turn-ON Time
Storage Time
Fall Time
0.9
1.2
V
6
V
ton
tstg
See specified Test Circuit.
30
ns
See specified Test Circuit.
360
ns
tf
See specified Test Circuit.
22
ns
[FET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
VDS=30V, VGS=0
30
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VDS=0
VDS=10V, ID=100µA
0.4
Forward Transfer Admittance
yfs
RDS(on)1
VDS=10V, ID=80mA
0.15
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Cutoff Voltage
V
10
µA
±10
µA
1.3
0.22
V
S
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
2.9
3.7
Ω
3.7
5.2
Ω
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
6.4
12.8
7.0
pF
Ω
Input Capacitance
Ciss
Output Capacitance
Coss
pF
Crss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
5.9
Reverse Transfer Capacitance
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
td(off)
See specified Test Circuit.
65
ns
See specified Test Circuit.
155
ns
tf
See specified Test Circuit.
120
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=150mA
0.26
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
Diode Forward Voltage
VSD
IS=150mA, VGS=0
0.87
0.3
8
7
0.15
8
7
1
2
6
5
6 5
2
3
4
0.65
3
4
1 : Base
2 : Emitter
3 : Gate
4 : Drain
5 : Source
6 : Collector
7 : Collector
8 : Collector
Top view
0.75
2.9
0.07
1
V
Electrical Connection
2.3
0.25
2.8
0.25
Package Dimensions
unit : mm
2240
nC
1.2
1 : Base
2 : Emitter
3 : Gate
4 : Drain
5 : Source
6 : Collector
7 : Collector
8 : Collector
SANYO : VEC8
No.8198-2/6
VEC2901
Switching Time Test Circuit
Switching TimeII Test Circuit
VDD=15V
VIN
4V
0V
ID=80mA
RL=187.5Ω
VIN
D
IB1
PW=20µs
D.C.≤1%
IB2
OUTPUT
INPUT
VOUT
RB
PW=10µs
D.C.≤1%
RL
VR
50Ω
G
+
+
100µF
P.G
50Ω
470µF
VBE= --5V
S
VCC=25V
IC= --20IB1= 20IB2=2.5A
IC -- VCE
[TR]
VCE=2V
5
60m
15mA
3.0
10mA
8mA
6mA
2.5
2.0
4mA
1.5
1.0
2mA
4
3
2
25°C
A
Collector Current, IC -- A
20mA
4.0
3.5
IC -- VBE
6
1
--25°C
A
[TR]
30mA
4
50m
4.5
Collector Current, IC -- A
0mA
Ta=75
°C
5.0
0.5
IB=0
0
0
0.2
0.4
0.6
0.8
Collector-to-Emitter Voltage, VCE -- V
3
Ta=75°C
25°C
3
--25°C
2
0.6
0.8
1.0
IT08136
VCE(sat) -- IC
[TR]
[TR]
IC / IB=20
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
0.4
Base-to-Emitter Voltage, VBE -- V
VCE=2V
5
0.2
IT08135
hFE -- IC
7
0
0
1.0
0.1
7
5
°C
75
3
=
Ta
2
25
0.01
C
5°
--2
°C
7
100
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
5
0.01
7
2
3
5
7 0.1
2
3
5
7 1.0
[TR]
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
0.1
7
°C
75
3
0.01
0.01
°C
25
--
°C
2
25
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
5
7
IT08138
[TR]
IC / IB=50
2
=
Ta
3
VBE(sat) -- IC
2
IC / IB=50
5
2
Collector Current, IC -- A
IT08137
VCE(sat) -- IC
3
5
7
IT08139
1.0
Ta= --25°C
7
25°C
75°C
5
3
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
7
IT08140
No.8198-3/6
VEC2901
Cob -- VCB
[TR]
Gain-Bandwidth Product, f T -- MHz
5
3
2
5
7 1.0
2
3
5
7 10
2
3
Collector-to-Base Voltage, VCB -- V
10
ms
10
DC
1.0
7
5
s
s 0µ
0µ 50
3
2
s
0m
s
op
era
tio
3
2
n
0.1
7
5
Ta=25°C
Single Pulse
Mounted on a ceramic board (900mm2✕0.8mm)
3
2
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
ID -- VDS
0.16
5
3
2
2
3
5
7 0.1
2
3
5
7 1.0
ou
[TR]
ed
on
ac
er
am
ic
0.6
bo
ar
d
(9
00
m
0.4
8m
m
)
20
40
60
80
100
0.04
ID -- VGS
[FET]
°C
75
0.15
0.10
0.05
0
0.4
0.6
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
10
--25
°C
Ta=
0.20
0.02
0
0
1.0
0.5
1.0
1.5
2.5
2.0
3.0
Gate-to-Source Voltage, VGS -- V
IT00029
[FET]
160
IT08144
0.25
0.06
140
25
°C
Ta
=7
5°
--2
5°C C
5V
V
2.
3.0
V
120
Ambient Temperature, Ta -- °C
0.30
2.0
VGS=1.5V
0.2
0.
0.2
0
[FET]
0.08
0
m2
✕
0
Drain Current, ID -- A
0.10
7
nt
0.8
7 100
IT08143
V
0.12
5
IT08142
M
1.0
5
6.0
Drain Current, ID -- A
3.5V
4.0V
3
PC -- Ta
VDS=10V
0.14
2
1.1
10
IC=5A
7
1.2
<10µs
1m
100
Collector Current, IC -- A
Collector Dissipation, PC -- W
10
7
5
7
[TR]
ICP=8A
2
IT08141
ASO
2
Collector Current, IC -- A
5
3
10
0.01
10
3
5
°C
Output Capacitance, Cob -- pF
7
2
[TR]
VCE=2V
7
100
0.1
f T -- IC
1000
f=1MHz
25
2
IT00030
RDS(on) -- ID
10
[FET]
Ta=25°C
VGS=4V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
9
8
7
80mA
6
5
ID=40mA
4
3
2
1
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
10
IT00031
7
5
Ta=75°C
25°C
3
--25°C
2
1.0
0.01
2
3
5
7
0.1
Drain Current, ID -- A
2
3
5
IT00032
No.8198-4/6
VEC2901
RDS(on) -- ID
[FET]
VGS=2.5V
7
Ta=75°C
5
25°C
--25°C
3
2
1.0
0.01
2
3
5
7
2
0.1
3
=2.
V GS
4.0V
40m
S=
I D=
VG
,
A
80m
I D=
4
3
2
1
0
--60
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
0.7
--25
°C
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
100
7
3
10
Ciss
2
3
IT00034
[FET]
VDS=10V
25°C
-Ta=
2
75°C
0.1
25°C
7
5
3
2
2
3
5
7
2
0.1
3
5
IT00036
SW Time -- ID
[FET]
VDD=15V
VGS=4V
5
3
td(off)
tf
2
100
7
tr
5
3
td(on)
2
2
3
5
7
2
0.1
IT00038
VGS -- Qg
10
Gate-to-Source Voltage, VGS -- V
Ciss, Coss, Crss -- pF
2
Crss
2
0.01
Drain Current, ID -- A
[FET]
3
3
7
5
[FET]
VDS=10V
ID=150mA
9
Coss
5
7
IT00037
5
5
3
yfs -- ID
10
0.01
1.2
f=1MHz
7
2
1000
Switching Time, SW Time -- ns
°C
75
C
25°
Ta=
Forward Current, IF -- A
2
0.6
2
7
3
0.01
0.5
--25°C
25°C
3
Drain Current, ID -- A
[FET]
2
5
5
0.01
0.01
160
3
7
Ta=75°C
7
1.0
VGS=0
0.1
10
IT00035
IF -- VSD
5
2
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5V
A,
3
1.0
0.001
[FET]
6
5
5
IT00033
RDS(on) -- Ta
7
[FET]
VGS=1.5V
7
5
Drain Current, ID -- A
RDS(on) -- ID
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
10
8
7
6
5
4
3
2
1
1.0
0
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT00039
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00040
No.8198-5/6
VEC2901
PD -- Ta
Allowable Power Dissipation, PD -- W
0.30
[FET]
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Amibient Temperature, Ta -- °C
140
160
IT01962
Note on usage : Since the VEC2901 includes MOSFET, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2005. Specifications and information herein are subject
to change without notice.
PS No.8198-6/6