SANYO TIG110BF

TIG110BF
Ordering number : EN9013A
SANYO Semiconductors
DATA SHEET
N-Channel Non Punch Through IGBT
TIG110BF
High Power High Speed Switching
Applications
Features
•
•
•
Low-saturation voltage
Ultrahigh speed switching
Enhansment type
Specifications
Absolute Maximum Ratings at Ta=25°C, Unless otherwise specified
Parameter
Symbol
Collector-to-Emitter Voltage
Conditions
Ratings
VCES
VGES
Gate-to-Emitter Voltage
ICc*1
Collector Current (DC)
Collector Current (Pulse)
Limited by Tjmax
@Tc=25°C*3
IC*2
Limited by Tjmax
ICP
Pulse width Limited by Tjmax
Allowable Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
@Tc=100°C*3
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
Unit
600
V
±30
V
27
A
14
A
6
A
108
A
2
W
30
W
150
°C
-55 to +150
°C
Note : *1 Shows chip capability
*2 Collector current is calculated from the following for mula
Tjmax - TC
IC(TC)=
Rth(j-c)×VCE(sat)max.(Tjmax, IC(TC))
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Package Dimensions
Product & Package Information
unit : mm (typ)
7509-005
• Package
: TO-220FI(LS)
• JEITA, JEDEC
: SC-67, SOT-186A, TO-220F
• Minimum Packing Quantity : 100 pcs./bag, 50 pcs./magazine
4.5
10.0
2.8
Marking
Electrical Connection
7.2
3.5
3.2
TIG110
0.6
16.1
16.0
2
LOT No.
1.2
14.0
3.6
0.9
1.2
0.75
2.4
1 2 3
2.55
2.55
1
0.7
1 : Gate
2 : Collector
3 : Emitter
3
SANYO : TO-220FI(LS)
http://semicon.sanyo.com/en/network
91411 TKIM TC-00002643/61511QJ TKIM TC-00002612 No.9013-1/5
TIG110BF
Electrical Characteristics at Tj=25°C, Unless otherwise specified
Parameter
Symbol
Collector-to-Emitter Breakdown Voltage
V(BR)CES
VCE=600V, VGE=0V
Gate-to-Emitter Leakage Current
IGES
VGE(off)
VGE=±30V, VCE=0V
VGE=15V, IC=15A
VCE(sat)2
VGE=15V, IC=40A
Unit
max
V
Tj=25°C
100
μA
Tj=125°C
1
mA
±100
nA
5.0
6.0
V
Tj=25°C
1.6
2.0
V
Tj=125°C
1.75
Tj=25°C
2.2
V
2880
pF
VCE=10V, IC=1mA
VCE(sat)1
typ
600
ICES
Collector-to-Emitter Saturation Voltage
min
IC=1mA, VGE=0V
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Threshold Voltage
Ratings
Conditions
4.0
V
Input Capacitance
Cies
Output Capacitance
Coes
45
pF
Reverse Transfer Capacitance
Cres
38
pF
Turn-ON Delay Time
65
ns
Rise Time
td(on)
tr
Turn-ON Time
ton
Turn-OFF Delay Time
td(off)
tf
Fall Time
Turn-OFF Time
Total Gate Charge
toff
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VCE=30V, f=1MHz
30
ns
L=200μH, VGE=15V, IC=15A, VCC=300V,
300
ns
Rg=30Ω, See specified Test Circuit.
250
ns
120
ns
450
ns
95
nC
20
nC
30
nC
VCE=300V, VGE=15V, IC=15A
Thermal Characteristics at Ta=25°C, Unless otherwise specified
Parameter
Symbol
Thermal Resistance (Junction- Case)
Rth(j-c)
Thermal Resistance (Junction- at mosphere)
Rth(j-a)
Ratings
Conditions
min
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
typ
max
Unit
4.17
°C / W
62.5
°C / W
Switching Time Test Circuit
L
15V
0V
VGE
Diode
VCC
RG
TIG110BF
VCLAMP=600V
Timing Chart
VGE
90%
10%
0
IC
90%
0
VCE
90%
10%
10%
tf
td(off)
toff
10%
10%
tr
td(on)
ton
IT16383
No.9013-2/5
TIG110BF
60
50
40
30
8V
20
10
15V
V
Tj=25°C
18V
80
70
V
GE =
10V
Collector Current, IC -- A
70
12
12V
V 15V
80
90
VG
E=18
60
50
40
30
8V
20
10
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Collector-to-Emitter Voltage, VCE -- V
1.5
2.0
V
3.0
3.5
4.0
8V
20
10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Collector-to-Emitter Voltage, VCE -- V
VCE -- VGE
3
IC=54A
27A
14A
2
1
5
7
9
11
13
VCE -- VGE
5
27A
14A
1
5
7
9
11
13
Gate-to-Emitter Voltage, VGE -- V
15
IT16390
--40
Tj=
25
7
8
9
10
11
Tj=25°C
3
IC=54A
27A
14A
2
1
5
7
9
11
13
Gate-to-Emitter Voltage, VGE -- V
10000
7
5
IC=54A
6
VCE -- VGE
IT16388
4
2
5
4
0
15
Tj=125°C
3
4
5
Collector-to-Emitter Voltage, VCE -- V
4
3
Gate-to-Emitter Threshold Voltage, VGE(off) -- V IT16387
IT16386
Tj= --40°C
Gate-to-Emitter Voltage, VGE -- V
Collector-to-Emitter Voltage, VCE -- V
20
0
5.0
Switching Time, toff, td(off), tf -- ns
Collector-to-Emitter Voltage, VCE -- V
5
0
30
10
0
0.5
0
40
°C
30
50
--40
40
60
°C
50
70
°C
60
80
Tj
=1
25
Collector Current, IC -- A
70
5.0
IT16385
IC -- VGE(off)
12
V
=1
8
10V
V
GE
Collector Current, IC -- A
80
4.5
VCE=10V
90
V
15
2.5
Collector-to-Emitter Voltage, VCE -- V
100
Tj=125°C
90
1.0
IT16384
IC -- VCE
100
0
0.5
5.0
25
°C
1.0
°C
0
0.5
125
°C
Collector Current, IC -- A
90
IC -- VCE
100
Tj= --40°C
10
V
IC -- VCE
100
3
2
1000
7
5
15
IT16389
toff, td(off), tf -- RG
VCC=300V
VClamp=600V
L=200μH
VGE=15V
IC=15A
t off
)
off
t d(
3
2
tf
100
7
5
3
2
10
1.0
2
3
5 7 10
2
3
5 7 100
Gate Resistance, RG -- Ω
2
3
5 7 1000
IT16391
No.9013-3/5
TIG110BF
toff, td(off), tf -- IC
tof
f
5
3
td (off)
2
tf
100
1.0
2
3
5
7
2
10
3
5
Collector Current, IC -- A
ton, td(on), tr -- IC
1000
Switching Time, ton, td(on), tr -- ns
7
5
t on
3
2
t d(on)
7
5
tr
3
2
3
5
7
2
10
3
5
Collector Current, IC -- A
VGE -- Qg
3
20
40
60
80
Total Gate Charge, Qg -- nC
IC -- Tc
50
75
100
125
2
2
3
5 7 10
150
Case Temperature, Tc -- °C
175
200
IT16590
2
3
5 7 100
2
3
5 7 1000
IT16393
Cies, Coes, Cres -- VCE
f=1MHz
Cies
1000
7
5
3
2
100
7
5
3
2
Coes
Cres
10
7
5
3
2
0
5
10
15
20
25
30
IT16395
PD -- Tc
30
25
20
15
10
5
0
20
40
60
80
100
120
140
Case Temperature, Tc -- °C
1000
7
5
3
2
5
25
3
IT16396
10
0
tr
5
0
100
15
14
0
7
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
20
o
t d(
35
6
0
n)
100
IT16394
9
0
t on
100
1.0
7
VCC=300V
IC=15A
VGE=15V
12
2
10000
7
5
3
2
Allowable Power Dissipation, PD -- W
Gate-to-Emitter Voltage, VGE -- V
15
3
Gate Resistance, RG -- Ω
2
10
1.0
Collector Current, IC(DC) -- A
100
IT16392
100
5
10
1.0
7
VCC=300V
VClamp=600V
L=200μH
VGE=15V
RG=30Ω
VCC=300V
VClamp=600V
L=200μH
VGE=15V
IC=15A
7
Switching Time, ton, td(on), tr -- ns
7
ton, td(on), tr -- RG
1000
VCC=300V
VClamp=600V
L=200μH
VGE=15V
RG=30Ω
Cies, Coes, Cres -- pF
Switching Time, toff, td(off), tf -- ns
1000
Forward Bias A S O
100
7
5
3
2
160
IT16589
P
T=
1m 500
μs
10 s
ms
10
7
5
3
2
1.0
7
5
3
2
DC
0.1
7
5
3 Tc=25°C
2
Single pulse
0.01
2 3
5 7 10
1.0
2
10
0m
op s
era
tio
n
3
5 7 100
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 1000
IT16591
No.9013-4/5
TIG110BF
Reverse Bias A S O
1000
7
5
Collector Current, IC -- A
3
2
100
7
5
3
2
10
7
5
3
2
Tc=25°C
VCC=300V
L=500μH
VGE=15V
1.0
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 1000
IT16400
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of September, 2011. Specifications and information herein are subject
to change without notice.
PS No.9013-5/5