TIG058E8 Ordering number : ENA1381A SANYO Semiconductors DATA SHEET TIG058E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance • • • Low voltage drive (4V) Built-in Gate-to-Emitter protection diode dv / dt guarantee* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage Conditions Ratings VCES VGES Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) V ±6 V Maximum Collector-to-Emitter dv / dt VGES ICP dVCE / dt Channel Temperature Tch 150 °C Storage Temperature Tstg -40 to +150 °C Collector Current (Pulse) PW≤1ms Unit 400 CM=150μF, VGE=4V VCE≤320V, starting Tch=25°C ±8 V 150 A 400 V / μs * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Package Dimensions Product & Package Information unit : mm (typ) 7011A-004 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3000 pcs./reel TIG058E8-TL-H Top View Packing Type: TL 0.25 2.9 Marking 0.15 8 5 ZB 2.3 4 1 0.65 0.9 0.25 LOT No. TL 0.3 Electrical Connection 8 7 6 5 1 2 3 4 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.07 2.8 0 t o 0.02 Bot t om View SANYO : ECH8 http://semicon.sanyo.com/en/network 60612 TKIM/D1008PJ MSIM TC-00001783 No. A1381-1/7 TIG058E8 Electrical Characteristics at Ta=25°C Parameter Symbol Collector-to-Emitter Breakdown Voltage V(BR)CES ICES IGES IC=2mA, VGE=0V VCE=320V, VGE=0V Collector-to-Emitter Saturation Voltage VGE(off) VCE(sat) VCE=10V, IC=1mA IC=100A, VGE=4V Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Gate-to-Emitter Threshold Voltage Ratings Conditions min typ Unit max 400 V VGE=±6V, VCE=0V 0.4 4.0 VCE=10V, f=1MHz 10 μA ±10 μA 0.9 V 5.6 V 2200 pF 32 pF 24 pF Fig.1 Large Current R Load Switching Circuit RL CM + VCC RG TIG058E8 4V 0V 100kΩ Note1. Gate Series Resistance RG ≥ 230Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 230Ω can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off. Ordering Information Device Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free TIG058E8-TL-H IC -- VCE Collector Current, IC -- A 180 V =5.0 VGE 4.0V 160 3.0V 120 2.5V 100 VCE=10V 180 140 80 60 40 Tc= 160 5°C --2 25°C 75°C 140 120 100 80 60 40 20 20 0 IC -- VGE 200 Tc=25°C Collector Current, IC -- A 200 0 1 2 3 4 5 6 7 8 Collector-to-Emitter Voltage, VCE -- V 9 10 IT14281 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Emitter Voltage, VGE -- V 4.5 5.0 IT14282 No. A1381-2/7 TIG058E8 VCE -- VGE 9 8 7 6 5 130A 4 100A 3 2 1 2 3 5 6 Gate-to-Emitter Voltage, VGE -- V IT14283 9 8 IC =150A 7 6 130A 5 100A 4 3 1 5 6 Gate-to-Emitter Voltage, VGE -- V 2 3 IT14284 4 VCE(sat) -- Tc 12 Tc=75°C VGE=4V 11 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 9 8 7 IC =15 0A 6 130A 5 100A 4 3 10 9 15 I C= 8 1 2 3 5 6 Gate-to-Emitter Voltage, VGE -- V IT14285 4 VGE(off) -- Tc 0.8 7 130A 6 5 100A 4 2 --50 --25 0 25 3 2 0.6 1000 7 5 0.4 0.3 0.2 0 25 50 75 100 125 Case Temperature, Tc -- °C 100 7 5 Coes Cres tf 3 td (off) 2 7 tr 3 2 td(on) 4 6 8 10 12 14 16 18 20 IT14288 SW Time -- RG Test circuit Fig.1 VGE=4V VCC=320V ICP=150A CM=150μF PW=50μs 5 1000 5 2 Collector-to-Emitter Voltage, VCE -- V 7 Test circuit Fig.1 VGE=4V VCC=320V RG=270Ω CM=150μF PW=50μs 5 0 IT14287 SW Time -- ICP 7 f=1MHz 2 10 7 150 150 IT14286 3 2 0.1 --25 125 Cies 3 0 --50 100 75 Cies, Coes, Cres -- VCE 5 0.5 50 Case Temperature, Tc -- °C 0.7 3 2 1000 ff) t d(o tf 7 5 tr 3 2 n) t d(o 100 7 5 100 7 0A 3 Cies, Coes, Cres -- pF Collector-to-Emitter Voltage, VCE -- V Tc=25°C 10 2 10 2 Gate-to-Emitter Cutoff Voltage, VGE(off) -- V 4 VCE -- VGE 11 Switching Time, SW Time -- ns Collector-to-Emitter Voltage, VCE -- V 10 IC=150A VCE -- VGE 11 Tc= --25°C Switching Time, SW Time -- ns Collector-to-Emitter Voltage, VCE -- V 11 2 3 5 7 100 Collector Current (Pulse), ICP -- A 2 3 IT14289 3 2 3 5 7 100 2 3 Gate Series Resistance, RG -- Ω 5 7 1000 IT14290 No. A1381-3/7 TIG058E8 dv / dt -- RG Fig.1 Switching test circuit VGE=4V VCC=320V RL=2Ω CM=150μF PW=50μs Turn OFF, dv / dt -- V / μs 1200 1000 800 600 400 200 0 0 50 100 150 200 250 Gate Series Resistance, RG -- Ω CM -- ICP 450 IT14291 160 ICP -- VGE VCE=320V CM=150μF Tc=25°C 140 Tc=70°C 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Gate-to-Emitter Voltage, VGE -- V 7 8 IT14292 VGE=5V VCE=320V CM=150μF Tc≤70°C 400 Maximum Capacitor, CM -- μF 300 180 Collector Current (Pulse), ICP -- A 1400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 Collector Current (Pulse), ICP -- A 140 160 IT14293 No. A1381-4/7 TIG058E8 Embossed Taping Specification TIG058E8-TL-H No. A1381-5/7 TIG058E8 Outline Drawing TIG05E8-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1381-6/7 TIG058E8 Note : TIG058E8 has protection diode between gate and emitter but handling it requires sufficient care to be taken. 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