WPB4002 Ordering number : ENA1769 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET WPB4002 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=115ns (typ) Input capacitance Ciss=2200pF (typ) • • ON-resistance RDS(on)=0.28Ω (typ) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V V Drain Current (DC) ID 23 A Drain Current (Pulse) IDP ISD PW≤10μs, duty cycle≤1% Source-to-Drain Diode Forward Current (DC) Source-to-Drain Diode Forward Current (Pulse) ISDP PW≤10μs, duty cycle≤1% 80 A 23 A 80 A 2.5 W Allowable Power Dissipation PD 220 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 172 mJ 17 A Avalanche Current *2 Tc=25°C Note : *1 VDD=99V, L=1mH, IAV=17A (Fig.1) *2 L≤1mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7503-004 • Package : TO-3PB • JEITA, JEDEC : SC-65, TO-247, SOT199 • Minimum Packing Quantity : 100 pcs. / tray 4.8 15.6 14.0 3.2 2.0 PB4002 20.0 1.2 1.3 15.0 2.6 3.5 Marking LOT No. 1.6 20.0 2.0 1.0 1 2 3 1.4 0.6 5.45 0.6 5.45 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB http://semicon.sanyo.com/en/network 60910QB TK IM TC-00002373 No. A1769-1/5 WPB4002 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V min typ Unit max 600 V 100 μA ±100 nA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=10V, ID=11.5A Static Drain-to-Source On-State Resistance RDS(on) ID=11.5A, VGS=10V Input Capacitance Ciss 2200 pF Output Capacitance Coss VDS=30V, f=1MHz VDS=30V, f=1MHz 400 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 83 pF Turn-ON Delay Time td(on) See Fig.2 42 ns Rise Time tr See Fig.2 130 ns Turn-OFF Delay Time td(off) See Fig.2 234 ns Fall Time tf Qg See Fig.2 84 ns VDS=200V, VGS=10V, ID=23A 84 nC VDS=200V, VGS=10V, ID=23A VDS=200V, VGS=10V, ID=23A IS=23A, VGS=0V 15.2 nC 45.4 nC Total Gate Charge 3 5 7.5 15 V S 0.28 0.36 Ω Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage Reverse Recovery Time VSD trr See Fig.3 115 ns Reverse Recovery Charge Qrr ISD=23A, VGS=0V, di/dt=100A/μs 340 nC Fig.1 Avalanche Resistance Test Circuit D ≥50Ω RG 10V 0V 1.1 10V 0V L VIN VDD=200V ID=11.5A RL=17.3Ω VIN D PW=10μs D.C.≤0.5% WPB4002 VDD 50Ω V Fig.2 Switching Time Test Circuit G S 1.5 VOUT G WPB4002 P.G RGS=50Ω S Fig.3 trr Reverse Recovery Resistance Test Circuit WPB4002 D 500μH G S VDD=50V Driver MOSFET No. A1769-2/5 WPB4002 ID -- VDS 60 ID -- VGS 70 Tc=25°C VDS=20V 15V 10V 60 50 Tc= --25°C Drain Current, ID -- A 40 30 20 10 10 15 20 25 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.7 0.6 0.5 Tc=75°C 0.3 25°C 0.2 --25°C 0.1 0 3 5 7 9 11 13 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 1.0 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A A 0.4 =1 S VG 0.3 0.2 0.1 --25 0 25 50 2 tf 100 tr 7 5 td(on) 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 100 125 5 IT15688 150 IT15685 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ciss, Coss, Crss -- VDS 1.4 IT15687 f=1MHz 7 5 Ciss 2 1000 7 Coss 5 3 2 Crss 100 3 2 75 IS -- VSD 10000 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns td (off) 16 IT15683 1.5 =1 ID , 0V 3 5 3 14 Diode Forward Voltage, VSD -- V 7 2 0.1 0.5 0.01 7 VDD=200V VGS=10V 1000 12 0.6 IT15686 SW Time -- ID 2 5 10 3 2 C 5° --2 = °C Tc 75 3 8 0.7 7 5 °C 25 5 6 Case Temperature, Tc -- °C 2 7 4 RDS(on) -- Tc 0 --50 VDS=10V 10 2 IT15684 | yfs | -- ID 3 0 Gate-to-Source Voltage, VGS -- V 15 Gate-to-Source Voltage, VGS -- V 5 20 0.8 0.8 0.4 30 0 ID=11.5A 0.9 75°C IT15682 RDS(on) -- VGS 1.0 40 10 30 Drain-to-Source Voltage, VDS -- V 25°C 5°C 25° C --25 °C 5 0 50 Tc= 7 0 6V VGS=5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A 8V 7 5 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT15689 No. A1769-3/5 WPB4002 VGS -- Qg 10 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 2 1 3 2 0 0 10 20 30 40 50 60 70 80 Total Gate Charge, Qg -- nC 1.5 1.0 0.5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C EAS -- Ta 120 140 160 IT155692 s 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 0 2 3 PD -- Tc 250 2.5 0μ s Tc=25°C Single pulse 0.1 0.1 90 10 μs Operation in this area is limited by RDS(on). IT15690 PD -- Ta 3.0 Avalanche Energy derating factor -- % 3 2 1.0 7 5 3 m s n 0m atio er op 4 10 10 7 5 10 5 ID=23A C D 6 10 s 7 3 2 IDP=80A (PW≤10μs) 1m 8 100 7 5 9 ASO 2 VDS=200V ID=23A 5 71000 IT15691 220 200 150 100 50 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15693 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1769-4/5 WPB4002 Note on usage : Since the WPB4002 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2010. Specifications and information herein are subject to change without notice. PS No. A1769-5/5