FGH40T100SMD 1000V, 40A Field Stop Trench IGBT Features General Description • High current capability Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for hard switching application such as UPS, welder, solar applications. • Low saturation voltage: V CE(sat) = 1.9V(Typ.) @ IC = 40A • High input impedance • Fast switching • RoHS compliant Applications • UPS, welder, solar application • PFC application E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF IFM (1) PD Ratings Units 1000 V ± 20 V Collector Current @ TC = 25oC 80 A Collector Current @ TC = 125oC 40 A o Pulsed Collector Current @ TC = 25 C 120 A Diode Forward Current @ TC = 25oC 80 A 125oC Diode Forward Current @ TC = Pulsed Diode Forward Current @ TC = 25oC 25oC Maximum Power Dissipation @ TC = Maximum Power Dissipation @ TC = 125oC 40 A 120 A 333 W 111 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RqJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. - 0.45 Units o C/W RqJC(Diode) Thermal Resistance, Junction to Case - 0.8 oC/W RqJA Thermal Resistance, Junction to Ambient - 40 oC/W ©2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C2 1 www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT February 2012 Device Marking Device Package FGH40T100SMD FGH40T100SMD TO-247 Eco Status Packaging Type Qty per Tube Tube 30ea RoHS For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 1000 - - V Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = 0V, IC = 1mA DBVCES DTJ Temperature Coefficient of Breakdown Voltage V GE = 0V, IC = 250 uA - 0.6 - V/oC ICES Collector Cut-Off Current V CE = VCES, VGE = 0V - - 1000 mA IGES G-E Leakage Current V GE = VGES, VCE = 0V - - ±500 nA IC = 250uA, VCE = VGE 4.2 5.3 6.5 V IC = 40A, VGE = 15V - 1.9 2.3 V IC = 40A, VGE = 15V, TC = 125oC - 2.3 - V - 3980 5295 pF - 124 165 pF - 76 115 pF On Characteristics V GE(th) G-E Threshold Voltage V CE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics C ies Input Capacitance C oes Output Capacitance C res Reverse Transfer Capacitance V CE = 30V, V GE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 29 38 ns tr Rise Time - 42 55 ns td(off) Turn-Off Delay Time - 285 371 ns tf Fall Time - 23 30 ns E on Turn-On Switching Loss - 2.35 3.1 mJ E off Turn-Off Switching Loss - 1.15 1.5 mJ E ts Total Switching Loss - 3.5 4.6 mJ td(on) Turn-On Delay Time - 27 36 ns tr Rise Time - 49 64 ns td(off) Turn-Off Delay Time - 285 371 ns tf Fall Time E on Turn-On Switching Loss E off E ts Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge V CC = 600V, IC = 40A, RG = 10W, V GE = 15V, Inductive Load, TC = 25oC V CC = 600V, IC = 40A, RG = 10W, V GE = 15V, Inductive Load, TC = 175oC - 20 26 ns - 4.4 5.7 mJ Turn-Off Switching Loss - 1.9 2.5 mJ Total Switching Loss - 6.3 8.2 mJ - 265 398 nC - 32 48 nC - 135 203 nC FGH40T100SMD Rev. C2 V CE = 600V, IC = 40A, V GE = 15V 2 www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter TC = 25°C unless otherwise noted Test Conditions TC = 25oC IF = 40A V FM Diode Forward Voltage E rr Diode Reverse Recovery Energy IF =40A, dIF/dt = 200A/ms trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge FGH40T100SMD Rev. C2 Max - 3.4 4.4 - 2.6 - TC = 175oC - 100 130 o 3 Typ. 175oC TC = IF =40A, dIF/dt = 200A/ms Min. TC = 25 C - 60 78 TC = 175oC - 256 - TC = 25oC - 185 260 TC = 175oC - 1512 - Unit s V uJ ns nC www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT Electrical Characteristics of Diode FGH40T100SMD 1000V, 40A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 120 20V 120 o 20V o TC = 25 C TC = 175 C 12V 12V 15V Collector Current, IC [A] 100 Collector Current, IC [A] 15V Figure 2. Typical Output Characteristics 80 10V 60 40 90 10V 60 30 VGE = 8V 20 VGE = 8V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics 0 120 Common Emitter VCE = 20V o o Collector Current, IC [A] Collector Current, IC [A] Common Emitter VGE = 15V TC = 25 C 90 o TC = 175 C 60 30 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 60 30 0 3 6 9 12 Gate-Emitter Voltage,VGE [V] 20 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 80A 3 40A 2 IC = 20A 4 Common Emitter o TC = -40 C 16 12 8 80A 40A 4 IC = 20A 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGH40T100SMD Rev. C2 15 Figure 6. Saturation Voltage vs. VGE 4 1 25 TC = 25 C 90 T = 175oC C 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 6 Figure 4. Transfer Characteristics 120 0 2 4 Collector-Emitter Voltage, VCE [V] 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT Typical Performance Characteristics Figure 8. Saturation Voltage vs. VGE Figure 7. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 16 12 8 80A 40A 4 IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] o 12 8 IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 15 Gate-Emitter Voltage, VGE [V] Cies 1000 Coes 100 Cres Common Emitter VGE = 0V, f = 1MHz 12 400V VCC = 600V 200V 9 6 3 Common Emitter o o TC = 25 C 10 0.1 TC = 25 C 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 50 100 150 200 Gate Charge, Qg [nC] 250 300 200 100 10ms 100ms 100 1ms 10 ms DC 10 Switching Time [ns] Collector Current, Ic [A] 0 Figure 12. Turn-on Characteristics vs. Gate Resistance 300 1 *Notes: 0.1 o 1. TC = 25 C tr td(on) o 2. TJ = 175 C 3. Single Pulse 1 o TC = 175 C 10 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] FGH40T100SMD Rev. C2 Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25 C o 0.01 20 Figure 10. Gate charge Characteristics 10000 Capacitance [pF] 80A 40A 4 20 Figure 9. Capacitance Characteristics TC = 175 C 16 5 0 10 20 30 40 Gate Resistance, RG [W ] 50 www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 2000 1000 Common Emitter VGE = 15V, RG =10W o TC = 25 C 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 40A 10 o TC = 175 C Switching Time [ns] Switching Time [ns] td(off) o tr 100 td(on) TC = 25 C o TC = 175 C 1 0 10 20 30 40 Gate Resistance, RG [ W ] 10 20 50 30 40 50 60 70 80 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 10 1000 Eon Switching Loss [uJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 10W Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 40A o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 1 20 30 40 50 60 70 0.1 80 0 10 20 30 40 50 Gate Resistance, RG [W ] Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics 15 200 10 Eon 1 Collector Current, IC [A] Switching Loss [mJ] 100 Eoff Common Emitter VGE = 15V, RG = 10W o TC = 25 C 10 Safe Operating Area o o VGE = 15V, TC = 175 C TC = 175 C 0.1 20 30 40 50 60 70 1 80 FGH40T100SMD Rev. C2 1 10 100 1000 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 6 www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequence 100 100 VCC = 600V Collector Current, IC A] Collector Current, Ic[A] load Current : peak of square wave 10 1 50 Duty cycle : 50% o 0.1 25 T = 125 C Common Emitter VGE = 15V C 0 1k 50 75 100 125 150 175 o Collector-Emitter Case Temperature, TC [ C] Powe Dissipation = 111 W 10k 100k 1M Switching Frequency, f [Hz] Figure 21. Diode Forward Characteristics Figure 22. Reverse Current 1000 80 o Tc = 175 C Reverse Currnet, IR [uA] Forward Current, IF [A] TC = 175 C 100 o o Tc = 75 C 10 o Tc = 25 C o Tc = 25 C o Tc = 75 C --- 10 1 o TC = 75 C 0.1 0.01 o o TC = 25 C Tc = 175 C 1 0 1 2 3 Forward Voltage, VF [V] 4 1E-3 5 Figure 23. Stored Charge 200 800 1000 Figure 24. Reverse Recovery Time o o Tc = 25 C Tc = 25 C o Reverse Recovery Time, Trr [ns] Tc = 175 C --- 1.6 dI/dt = 200A/us 1.2 100A/us 0.8 dI/dt = 200A/us 0.4 0.0 400 600 VR [V] 500 2.0 Stored Recovery Charge, Qrr [uC] 0 100A/us 0 FGH40T100SMD Rev. C2 10 20 30 Forward Current, IF [A] o 400 300 7 dI/dt = 200A/us 200 100A/us 100A/us 100 0 40 Tc = 175 C --- 0 dI/dt = 200A/us 10 20 30 Forward Current, IF [A] 40 www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT Typical Performance Characteristics Figure 25. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 PDM 0.01 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse 0.001 0.00001 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec] FGH40T100SMD Rev. C2 8 www.fairchildsemi.com FGH40T100SMD 1000V, 40A Field Stop IGBT Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH40T100SMD Rev. C2 9 www.fairchildsemi.com ® F-PF Sä FRFET® SM G lobal Power Resource G reenBridgeä G reen FPSä G reen FPSä e-Seri es ä G maxä G TOä Intell iMAXä ISOP LANARä Maki ng Small Speak ers Sound Louder and Better™ MegaBuckä MICRO COUPLERä MicroFETä MicroPakä MicroPak2ä MillerDr iveä MotionMaxä Motion-SPMä mWS averä O ptoHiT ä ® O PTOLOG IC ® O PTOPLANAR 2Coolä Ac cuPowerä AX-CAP ä* Bi tSiCä Build it Nowä CorePLUSä CorePOW ERä CROSSVOLTä CTLä Current T ransfer Logi cä ® DEUXPE ED Dual Cool™ ® Ec oSPA RK EfficientMaxä ESBCä ® ® Fai rchi ld ® Fai rchi ld Semiconductor FACT Quiet Seriesä ® FACT ® FAST Fas tvCoreä FETBenchä ® FlashWriter * FPSä PowerTrench PowerXS™ Programmable Active Droopä ® QF ET QSä Quiet Ser iesä RapidConfigureä ä Saving our world, 1mW /W /kW at a time™ Si gnalW iseä SmartMaxä SMART START ä Solutions for Your Success ä ® SPM ST EALTHä ® SuperFET SuperSOTä-3 SuperSOTä-6 SuperSOTä-8 ® SupreMOS SyncFET ä Sync-Lock™ ® * The Power Franc hi se ® TinyB oostä TinyB uc kä TinyCalc ä ® TinyLogic TINYOPTO ä TinyP owerä TinyPW Mä TinyW ireä TranSiCä TriFault Detectä ® TRUE CURR ENT * mSerDesä ® UHC Ultra FRFET ä UniFETä VCXä Visual Maxä VoltagePlusä XS™ ® * T rademarks of Sys tem G eneral Corporation, used under license by Fairchild Semi conduct or. 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