FAIRCHILD FDZ375P_10

FDZ375P
P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
-20 V, -3.7 A, 78 mΩ
Features
General Description
„ Max rDS(on) = 78 mΩ at VGS = -4.5 V, ID = -2.0 A
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ375P minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
„ Max rDS(on) = 92 mΩ at VGS = -2.5 V, ID = -1.5 A
„ Max rDS(on) = 112 mΩ at VGS = -1.8 V, ID = -1.0 A
„ Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A
„ Occupies only 1.0 mm2 of PCB area. Less than 30% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.4 mm height when mounted to
PCB
Applications
„ RoHS Compliant
„ Battery management
„ Load switch
„ Battery protection
Pin 1
S
S
S
D
G
G
Pin 1
D
TOP
BOTTOM
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
-20
Units
V
±8
V
-3.7
-12
Power Dissipation
TA = 25°C
(Note 1a)
1.7
Power Dissipation
TA = 25°C
(Note 1b)
0.5
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
75
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
N
Device
FDZ375P
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
Package
WL-CSP 1.0X1.0 Thin
1
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
April 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±100
nA
-1.2
V
-20
V
-12
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25 °C
2
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-0.3
-0.5
mV/°C
VGS = -4.5 V, ID = -2.0 A
65
VGS = -2.5 V, ID = -1.5A
77
92
VGS = -1.8 V, ID = -1.0 A
92
112
VGS = -1.5 V, ID = -1.0 A
112
150
VGS = -4.5 V, ID = -2.0 A,
TJ =125°C
98
143
VDD = -5 V, ID = -3.3 A
11
78
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
650
865
pF
110
145
pF
95
150
pF
5.3
11
ns
8.2
15
ns
138
221
ns
84
124
ns
11
15
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -3.3 A,
VGS = -4.5 V, RGEN = 6 Ω
VGS = -4.5 V, VDD = -10 V,
ID = -3.3 A
nC
0.8
nC
3
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -1.3 A
-1.1
(Note 2)
IF = -3.3 A, di/dt = 100 A/µs
A
-0.7
-1.2
V
68
109
ns
43
69
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 75 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
2
www.fairchildsemi.com
FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
2.5
VGS = -4.5 V
VGS = -3 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
12
VGS = -2.5 V
9
VGS = -2 V
VGS = -1.8 V
6
VGS = -1.5 V
3
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0
0.5
1.0
1.5
2.0
VGS = -1.5 V
VGS = -1.8 V
2.0
VGS = -2 V
1.5
VGS = -2.5 V
1.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
0.5
2.5
0
3
Figure 1. On Region Characteristics
9
12
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
400
ID = -2 A
VGS = -4.5 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
300
ID = -2 A
200
TJ = 125 oC
100
TJ = 25 oC
0
0.5
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
12
100
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
VGS = -3 V
9
VDS = -5 V
6
TJ = 150 oC
3
TJ = 25 oC
TJ = -55 oC
0
0.0
0.5
1.0
1.5
2.0
10
TJ = 150 oC
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
5000
ID = -3.3 A
CAPACITANCE (pF)
VDD = -8 V
3.0
VDD = -10 V
1.5
VDD = -12 V
Ciss
1000
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
0
0
3
6
9
12
1
Figure 7. Gate Charge Characteristics
20
Figure 8. Capacitance vs Drain
to Source Voltage
30
P(PK), PEAK TRANSIENT POWER (W)
1000
10
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 us
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
100 ms
1s
10 s
DC
SINGLE PULSE
TJ = MAX RATED
0.01
RθJA = 260 oC/W
TA = 25 oC
0.001
0.1
1
10
100
100
SINGLE PULSE
RθJA = 260 oC/W
TA = 25 oC
10
1
0.1
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 260 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
4
www.fairchildsemi.com
FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
5
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
www.fairchildsemi.com
FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
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