FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.7 A, 78 mΩ Features General Description Max rDS(on) = 78 mΩ at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ375P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). Max rDS(on) = 92 mΩ at VGS = -2.5 V, ID = -1.5 A Max rDS(on) = 112 mΩ at VGS = -1.8 V, ID = -1.0 A Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2 x 2 BGA Ultra-thin package: less than 0.4 mm height when mounted to PCB Applications RoHS Compliant Battery management Load switch Battery protection Pin 1 S S S D G G Pin 1 D TOP BOTTOM WL-CSP 1.0X1.0 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -3.7 -12 Power Dissipation TA = 25°C (Note 1a) 1.7 Power Dissipation TA = 25°C (Note 1b) 0.5 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 75 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking N Device FDZ375P ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C Package WL-CSP 1.0X1.0 Thin 1 Reel Size 7” Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET April 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA -1.2 V -20 V -12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C 2 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.3 -0.5 mV/°C VGS = -4.5 V, ID = -2.0 A 65 VGS = -2.5 V, ID = -1.5A 77 92 VGS = -1.8 V, ID = -1.0 A 92 112 VGS = -1.5 V, ID = -1.0 A 112 150 VGS = -4.5 V, ID = -2.0 A, TJ =125°C 98 143 VDD = -5 V, ID = -3.3 A 11 78 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 650 865 pF 110 145 pF 95 150 pF 5.3 11 ns 8.2 15 ns 138 221 ns 84 124 ns 11 15 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -3.3 A, VGS = -4.5 V, RGEN = 6 Ω VGS = -4.5 V, VDD = -10 V, ID = -3.3 A nC 0.8 nC 3 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.3 A -1.1 (Note 2) IF = -3.3 A, di/dt = 100 A/µs A -0.7 -1.2 V 68 109 ns 43 69 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 75 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 260 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C 2 www.fairchildsemi.com FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 2.5 VGS = -4.5 V VGS = -3 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 12 VGS = -2.5 V 9 VGS = -2 V VGS = -1.8 V 6 VGS = -1.5 V 3 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 VGS = -1.5 V VGS = -1.8 V 2.0 VGS = -2 V 1.5 VGS = -2.5 V 1.0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX 0.5 2.5 0 3 Figure 1. On Region Characteristics 9 12 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 400 ID = -2 A VGS = -4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 300 ID = -2 A 200 TJ = 125 oC 100 TJ = 25 oC 0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 12 100 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3 V 9 VDS = -5 V 6 TJ = 150 oC 3 TJ = 25 oC TJ = -55 oC 0 0.0 0.5 1.0 1.5 2.0 10 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 5000 ID = -3.3 A CAPACITANCE (pF) VDD = -8 V 3.0 VDD = -10 V 1.5 VDD = -12 V Ciss 1000 Coss 100 Crss f = 1 MHz VGS = 0 V 10 0.1 0 0 3 6 9 12 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 30 P(PK), PEAK TRANSIENT POWER (W) 1000 10 -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED 0.01 RθJA = 260 oC/W TA = 25 oC 0.001 0.1 1 10 100 100 SINGLE PULSE RθJA = 260 oC/W TA = 25 oC 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 260 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C 4 www.fairchildsemi.com FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C 5 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDZ375P Rev.C www.fairchildsemi.com FDZ375P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM™ AccuPower™ F-PFS™ ®* PowerTrench® Auto-SPM™ FRFET® SM Build it Now™ Global Power Resource PowerXS™ The Power Franchise® ® CorePLUS™ Programmable Active Droop™ Green FPS™ CorePOWER™ QFET® Green FPS™ e-Series™ CROSSVOLT™ Gmax™ QS™ TinyBoost™ CTL™ Quiet Series™ GTO™ TinyBuck™ RapidConfigure™ Current Transfer Logic™ IntelliMAX™ TinyCalc™ DEUXPEED® ISOPLANAR™ ™ TinyLogic® Dual Cool™ MegaBuck™ TINYOPTO™ ® Saving our world, 1mW/W/kW at a time™ EcoSPARK MICROCOUPLER™ TinyPower™ SignalWise™ EfficentMax™ MicroFET™ TinyPWM™ SmartMax™ ESBC™ MicroPak™ TinyWire™ SMART START™ MicroPak2™ ® TriFault Detect™ SPM® MillerDrive™ TRUECURRENT™* ® MotionMax™ STEALTH™ Fairchild µSerDes™ ® Motion-SPM™ SuperFET™ Fairchild Semiconductor OptiHiT™ SuperSOT™-3 FACT Quiet Series™ OPTOLOGIC® SuperSOT™-6 FACT® ® UHC® ® OPTOPLANAR SuperSOT™-8 FAST ® Ultra FRFET™ SupreMOS™ FastvCore™ UniFET™ SyncFET™ FETBench™ VCX™ Sync-Lock™ FlashWriter® * PDP SPM™ VisualMax™ FPS™ XS™