MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE CM100MX-12A ¡IC ................................................................... 100A ¡VCES ............................................................ 600V ¡CIB (3-phase Converter + 3-phase Inverter + Brake) ¡Flatbase Type / Insulated Package / Copper base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm ＊34.52 ＊38.34 55 29 56 28 57 27 58 26 59 25 60 24 61 23 2 3 4 5 6 7 8 TERMINAL t = 0.8 φ4.3 1.5 30 1 (3.81) 1.15 0.65 ＊81.67 ＊85.48 ＊89.29 ＊93.1 ＊96.91 ＊66.43 ＊70.24 ＊47.38 ＊51.19 54 (7.4) 1.2 ＊15.48 ＊19.28 ＊30.72 ＊34.52 φ2.5 φ2.1 12.5 ＊11.66 ＊15.48 ＊23.1 ＊26.9 20.5 17 13 7 3.75 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 SECTION A 9 10 11 12 13 14 15 16 17 18 19 20 21 22 ＊Pin positions with tolerance A ＊91.2 ＊95 ＊75.96 ＊79.76 ＊60.72 ＊64.52 ＊45.48 ＊49.28 0.8 ＊30.24 ＊34.04 (7.75) ＊15 ＊18.8 0 (3) 3.5 φ0.5 0.8 LABEL Tolerance otherwise specified TH1(29) P(52~53) P1(54~55) GuP(49) GvP(44) GwP(39) Division of Dimension NTC ＊58.4 0 4-φ5.5 MOUNTING HOLES 39 50 ±0.5 57.5 62 ＊4.2 ＊28.33 ＊32.14 0 ＊4.06 ＊13.09 ＊16.9 121.7 ＊118.1 110 ±0.5 99 94.5 ±0.2 to 6 ±0.3 to 30 ±0.5 30 to 120 ±0.8 over 120 to 400 ±1.2 to over 3 over 6 over TH2(28) EuP(48) R(1~2) S(5~6) T(9~10) B(24~25) GB(35) GuN(34) EvP(43) EwP(38) U(13~14) V(17~18) GvN(33) W(21~22) Tolerance 3 0.5 GwN(32) N(57~58) N1(60~61) E(31) * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 75°C Collector current Pulse Maximum collector dissipation TC = 25°C Emitter current TC = 25°C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 600 ±20 100 200 400 100 150 Unit Rating 600 ±20 50 100 280 600 50 100 Unit Rating 800 220 100 Unit V Vrms V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 97°C Collector current Pulse Maximum collector dissipation TC = 25°C Repetitive peak reverse voltage TC = 25°C Forward current Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) V A W V A CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage (Note. 1) 3-phase full wave rectifying, TC = 137°C DC output current The sine half wave 1 cycle peak value, f = 60Hz, Surge forward current non-repetitive Value for one cycle of surge current Current square time 1000 A 4160 A2S Rating –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 270 Unit MODULE Symbol Tj Tstg Viso — — — Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Weight Conditions Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) On the centerline X, Y Mounting M5 screw (Typical) °C Vrms μm N·m g +：convex –：concave – Y + Heat sink side Note. 8: The base plate flatness measurement points are in the following figure. X – + Heat sink side Jan. 2009 2 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25°C, unless otherwise specified) Parameter Conditions ICES VGE(th) IGES VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 10mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG (Note. 6) IC = 100A, VGE = 15V IC = 100A, VGE = 15V VCE = 10V VGE = 0V Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE = ±15V, RG = 6.2Ω Inductive load (IE = 100A) (Note. 6) IE = 100A, VGE = 0V IE = 100A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25°C, per switch External gate resistance Tj = 25°C Tj = 125°C Chip Min. — 5 — — — — — — — — — — — — — — — — — — — — 6 Limits Typ. — 6 — 1.7 1.9 1.6 — — — 270 — — — — — 3.6 2.0 1.95 1.9 — — 0 — Max. 1 7 0.5 2.1 — — 13.3 1.4 0.45 — 100 100 300 600 200 — 2.8 — — 0.31 0.59 — 62 Min. — 5 — — — — — — — — — — — — — — — 13 Limits Typ. — 6 — 1.7 1.9 1.6 — — — 200 — 2.0 1.95 1.9 — — 0 — Max. 1 7 0.5 2.1 — — 9.3 1.0 0.3 — 1 2.8 — — 0.44 0.85 — 125 Min. — — Limits Typ. — 1.2 Max. 20 1.6 — — 0.24 Unit mA V μA V nF nC ns μC V K/W Ω BRAKE PART Symbol Parameter Conditions ICES VGE(th) IGES VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 5mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG IRRM(Note.3) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG (Note. 6) IC = 50A, VGE = 15V IC = 50A, VGE = 15V VCE = 10V VGE = 0V Tj = 25°C Tj = 125°C Chip (Note. 6) VCC = 300V, IC = 50A, VGE = 15V VR = VRRM (Note. 6) IF = 50A IF = 50A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25°C Internal gate resistance External gate resistance Tj = 25°C Tj = 125°C Chip Unit mA V μA V nF nC mA V K/W Ω CONVERTER PART Symbol IRRM VF Rth(j-c) Parameter Conditions Repetitive peak reverse current VR = VRRM, Tj = 150°C IF = 100A Forward voltage drop Thermal resistance per Diode (Note. 1) (Junction to case) Unit mA V K/W Jan. 2009 3 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R ΔR/R B(25/50) P25 Parameter Conditions TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C Zero power resistance Deviation of resistance B constant Power dissipation (Note. 7) Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Min. Limits Typ. Max. — 0.015 — Unit kΩ % K mW MODULE Symbol Rth(c-f) Parameter Conditions Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) (Note. 2) Unit K/W Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150°C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] Dimensions in mm (tolerance: ±1mm) Chip Location (Top view) (121.7) 98.9 102.3 91.7 79.3 84.6 65.5 70.3 51.6 41.2 0 30.8 (110) 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 CR CR CR S N T N RN 59 0 1 2 3 4 5 6 CR TP 7 8 48.2 61 25.3 43.2 CR SP 36.8 CR RP 60 Tr Br Th Di Br Tr WN Di WN 30 29 28 27 26 25 24 23 15.6 21.6 (Th) 22.6 (Tr/UP, Tr/VP, Tr/WP) 29.2 (Di/Br) 30.0 (Di/UP, Di/VP, Di/WP) 37.4 44.8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 101.0 58 86.7 91.6 57 78.7 56 Tr Tr Tr UP VP WP Di Di Di VP UP WP Tr Tr VN UN Di Di UN VN 72.4 55 65.4 (50) (62) 54 25.8 26.8 29.8 LABEL SIDE Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE P1 V VGE = 15V P1 U B VGE = 0V IC GuP P1 GuP EuP EuP U VGE = 0V VGE = 15V GuN IC GuN E VGE = 15V V N1 E V IC GB N1 E N1 P side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) B r Tr VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) VCE(sat) test circuit P1 V P1 VGE = 0V VGE = 0V IE GuP P1 V GuP EuP IF EuP B U U VGE = 0V VGE = 0V GuN GuN E E IE VGE = 0V V GB E N1 N1 N1 P side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) B r Di VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) VEC/VFM test circuit Arm VGE IE IE 90% 0V 0% trr Load –VGE + VCC IC 0A 90% +VGE 0V RG VGE –VGE t VCE Irr IC 10% 0A td(on) tr td(off) Switching time test circuit and waveforms 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr tf trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part Tj = 25°C 12 13 150 11 100 10 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 15 VGE = 20V 9 8 0 1 2 3 4 5 6 7 8 9 10 VGE = 15V 3 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 50 100 150 200 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 10 103 Tj = 25°C 8 6 4 IC = 100A IC = 200A 2 7 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C 2.5 3 3.5 4 IC = 40A 0 6 8 10 12 14 16 18 101 20 10–1 1.5 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 SWITCHING TIME (ns) 7 5 3 2 1 CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part Cies 7 5 3 2 100 0.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 101 0 GATE-EMITTER VOLTAGE VGE (V) 102 CAPACITANCE (nF) 3.5 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Inverter part Coes Cres 7 5 3 2 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 7 5 3 2 103 7 5 3 2 tf td(off) 102 7 td(on) 5 3 2 101 7 5 3 2 100 1 10 Conditions: VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive load tr 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Jan. 2009 6 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 7 SWITCHING LOSS (mJ/pulse) 103 SWITCHING TIME (ns) 5 td(on) 3 tf 2 td(off) tr 102 7 Conditions: VCC = 300V 3 VGE = ±15V IC = 100A 2 Tj = 125°C Inductive load 101 0 10 2 3 5 7 101 5 2 3 100 7 3 2 Eon 5 3 2 Eoff 100 7 5 3 2 5 7 102 2 3 5 7 101 2 3 102 trr 7 2 3 5 7 103 Irr 5 2 101 1 10 5 7 102 GATE RESISTANCE RG (Ω) 3 5 7 102 2 3 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) IC = 100A VCC = 200V 15 VCC = 300V 10 5 100 2 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part GATE-EMITTER VOLTAGE VGE (V) 3 3 Err 0 2 REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = ±15V 3 RG = 6.2Ω Tj = 25°C 2 Inductive load Conditions: VCC = 300V VGE = ±15V IC, IE = 100A 101 Tj = 125°C 7 Inductive load 0 Conditions: VCC = 300V VGE = ±15V RG = 6.2Ω Tj = 125°C Inductive load 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 7 5 3 2 20 Eon Err COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) lrr (A), trr (ns) SWITCHING LOSS (mJ/pulse) 2 GATE RESISTANCE RG (Ω) 102 10–1 0 10 3 10–1 1 10 5 7 102 Eoff 5 200 300 400 GATE CHARGE QG (nC) 7 Single pulse 5 TC = 25°C 3 2 10–1 7 5 3 2 10–2 Inverter IGBT part : Per unit base = Rth(j–c) = 0.31K/W Inverter FWDi part : Per unit base = Rth(j–c) = 0.59K/W Converter-Di part : Per unit base = Rth(j–c) = 0.24K/W Brake IGBT part : Per unit base = Rth(j–c) = 0.44K/W Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.85K/W –3 10 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 7 5 3 2 TIME (s) Jan. 2009 7 MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) FORWARD CURRENT lF (A) 103 Tj = 25°C Tj = 125°C 7 5 3 2 102 7 5 3 2 101 0 0.5 1.0 1.5 3.5 VGE = 15V 3 2.5 2 1.5 1 0.5 0 2.0 Tj = 25°C Tj = 125°C 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR CURRENT IC (A) FORWARD VOLTAGE VF (V) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part FORWARD CURRENT IF (A) 102 7 5 3 2 101 7 5 3 2 100 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 FORWARD VOLTAGE VF (V) Jan. 2009 8