FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 8A,20V,26mΩ General Description Features This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on)@VGS=2.5v on special MicroFET leadframe with all the drains on one side of the package. A RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A >2000V ESD protection REE I DF M ENTATIO LE N MP LE Applications RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A Li-lon Battery Pack D1 D1 D2 Low Profile-1mm maxium-in the new package MicroFET 3.3x3.3 mm Pb-free and RoHS Compliant DD22 S1 G1 S2 G2 1 8 2 7 3 6 4 5 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain-Source Voltage Parameter VGSS Gate-Source Voltage ID Drain Current -Continuous -Pulsed (Note 1a) PD Power dissipation (Steady State) (Note 1a) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 20 Units V ±12 V 8 A 40 2.4 W -55 to +150 oC Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 52 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 108 RθJC Thermal Resistance, Junction-to-Case (Note 1) 5 o C/W Package Marking and Ordering Information Device Marking 3300A Device FDMC3300NZA ©2005 Fairchild Semiconductor Corporation FDMC3300NZA Rev B Reel Size 7” 1 Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET December 2005 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250µA 20 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C - 12.0 - mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, - - 1 µA IGSS Gate-Body Leakage, VGS = ±12V, VDS = 0V - - ±10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 0.6 - 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C - -3.1 - mV/°C VGS = 4.5V, ID = 8A - 20 26 25 34 RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance VGS = 2.5V, ID = 7A mΩ VGS = 4.5V, ID = 8A, TJ =150°C - 29 38 VDS = 5V, - 29 - S - 610 - pF - 165 - pF - 115 - pF - 1.7 - Ω - 8 16 ns - 8 16 ns - 19 34 ns ID =8 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 10V, VGS =0V, f = 1.0MHz f = 1.0MHz Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time - 9 18 ns Qg Total Gate Charge - 8 - nC Qgs Gate-Source Charge - 1 - nC Qgd Gate-Drain Charge - 2 - nC - 0.7 1.2 V - - 21 ns - - 6 nC VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω VDS = 10V, ID = 8A, VGS = 4.5V Drain-Source Diode Characteristics and Maximum Ratings VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF= 8A, dIF/dt=100A/µs (Note 2) Notes: 1. RθJA is determined with the device mounted on a 1in2 oz.copper pad on a 1.5x1.5 in board of FR-4 material .RθJC are guaranteed by design while RθJA is determined by the user’s board design. b. 108°C/W when mounted on a minimum pad of 2 oz copper a. 52°C/W when mounted on a 1 in2 pad of 2 oz 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2 FDMC3300NZA RevB www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 30 NORMALIZED DRAIN to SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 PULSE DURATION =300µS DUTY CYCLE =2.0% MAX 20 Waveforms in Descending order: 10 0 0 1 2 3 VGS= 4.5V 3.5V 3.0V 2.5V 2.0V 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On Region Characteristics RDS(ON), ON-RESISTANCE (OHM) NORMALIZED DRAIN to SOURCE ON-RESISTANCE PULSE DURATION =300µS DUTY CYCLE =2.0% MAX 1.2 1.0 ID = 8A VGS = 4.5V 0.8 0.6 -80 -40 0 40 80 1.6 1.4 1.2 1.0 0.8 4 8 12 16 20 24 28 32 ID, DRAIN CURRENT (A) 120 160 TJ, JUNCTION TEMPERATURE (°C) 40 ID=4A 0.04 0.03 TJ = 125°C 0.02 TJ = 25°C 0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Votlage 100 IS, REVERSE CURRENT(A) PULSE DURATION=300µs DUTY CYCLE=2.0% MAX VDS = 5V 20 10 VGS=0V 1 ° 0.1 TJ=125 C TJ=25°C 0.01 TJ = 25°C 10 TJ=-55°C 1E-3 TJ = 125°C 0 0.0 36 PULSE DURATION=300µs DUTY CYCLE=2.0% MAX 0.05 40 ID, DRAIN CURRENT (A) 2.5V 3.0V 3.5V 4.0V 4.5V 1.8 0.06 Figure 3. On Resistance Variation with Temperature 30 VGS= 2.0V Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 1.4 2.0 0.5 1.0 TJ = - 55°C 1.5 2.0 2.5 3.0 1E-4 0.0 3.5 Figure 5. Transfer Characteristics 0.4 0.6 0.8 1.0 1.2 1.4 Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 3 FDMC3300NZA RevB 0.2 VSD, BODY DIODE FORWARD VOLTAGE(V) VGS, GATE TO SOURCE VOLTAGE (V) www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE to SOURCE VOLTAGE(V) 8 1000 CISS ID=8A 6 CAPACITANCE (pF) VDD=5V VDD=10V 4 VDD=15V 2 0 0 2 4 6 8 10 12 Qg, GATE CHARGE (nC) 14 COSS CRSS 100 50 16 f = 1MHz VGS = 0V 0.1 Figure 7. Gate Charge Characteristics 10 RDSON LIMITED 100µS 10 1mS 10mS 1 100mS VGS=4.5V SINGLE PULSE 0.1 1S 10S RθJA=108°C/W DC TA=25°C 0.01 0.1 20 Figure 8. Capacitance Characteristics ID, DRAIN CURRENT(A) ID, DRAIN CURRENT(A) 100 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 10 8 VGS=4.5V 6 4 VGS=2.5V 2 RθJA=108°C/W 0 25 100 50 75 100 125 TA, AMBIENT TEMPERATURE(°C) VDS, DRAIN-SOURCE VOLTAGE(V) Figure 9. Safe Operating Area 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER(W) 1000 100 10 SINGLE PULSE RθJA=108°C/W TA=25°C 1 -4 10 -3 10 -2 10 -1 0 10 10 t, Rectangular Pulse Duration(S) 1 10 2 10 3 10 Figure 11. Single Maximum Power Dissipation 4 FDMC3300NZA RevB www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Normalized Thermal Impedance ZθJA 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 1E-3 -4 10 -3 10 -2 10 -1 0 10 10 t, Rectangular Pulse Duration(S) 1 10 2 10 3 10 Figure 12. Transient Thermal Response Curve 5 FDMC3300NZA RevB www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench® MOSFET FDMC3300NZA RevB www.fairchildsemi.com 6 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 7 FDMC3300NZA Rev B www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V specified PowerTrench® MOSFET TRADEMARKS