FAIRCHILD FCH47N60

TM
FCH47N60 / FCA47N60
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
• Typ. RDS(on) = 0.058Ω
• Ultra Low Gate Charge (typ. Qg = 210nC)
• Low Effective Output Capacitance (typ. Cosseff. = 420pF)
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
• 100% avalanche tested
D
!
"
G!
G D
S
TO-247
! "
TO-3P
"
"
!
S
G DS
Absolute Maximum Ratings
Symbol
Parameter
FCH47N60
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
(Note 1)
FCA47N60
Unit
600
V
47
29.7
A
A
141
A
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
1800
mJ
Avalanche Current
(Note 1)
47
A
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
417
3.33
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
©2005 Fairchild Semiconductor Corporation
FCH47N60 / FCA47N60 Rev. A
1
Typ.
Max.
Unit
--
0.3
°C/W
0.24
--
°C/W
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
SuperFET
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
Typ.
Max.
Unit
--
41.7
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60
FCH47N60
TO-247
-
-
30
FCA47N60
FCA47N60
TO-3P
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250µA, TJ = 150°C
--
650
--
V
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 23.5A
--
0.058
0.07
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
--
40
--
S
--
5900
8000
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
3200
4200
pF
--
250
--
pF
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
160
--
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
420
--
pF
VDD = 300V, ID = 47A
RG = 25Ω
--
185
430
ns
--
210
450
ns
--
520
1100
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 47A
VGS = 10V
(Note 4, 5)
--
75
160
ns
--
210
270
nC
--
38
--
nC
--
110
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
47
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
141
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 47A
--
--
1.4
V
trr
Reverse Recovery Time
590
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 47A
dIF/dt =100A/µs
--
Qrr
--
25
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
2
FCH47N60 / FCA47N60 Rev. A
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Symbol
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
10
2
ID , Drain Current [A]
2
1
10
* Notes :
1. 250탎 Pulse Test
2. TC = 25°C
0
10
-1
0
10
10
150°C
1
-55°C
- Note
1. VDS = 40V
2. 250µs Pulse Test
0
10
1
10
25°C
10
2
10
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.20
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
0.15
VGS = 10V
0.10
VGS = 20V
0.05
2
10
1
10
150°C
25°C
* Notes :
1. VGS = 0V
0
2. 250µs Pulse Test
10
* Note : TJ = 25°C
0.00
0
20
40
60
80
100
120
140
160
180
200
0.2
0.4
0.6
0.8
Figure 5. Capacitance Characteristics
1.4
1.6
12
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
25000
Crss = Cgd
VGS, Gate-Source Voltage [V]
Capacitance [pF]
1.2
Figure 6. Gate Charge Characteristics
30000
20000
Coss
15000
* Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
10000
5000
1.0
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Crss
0
-1
10
0
10
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 47A
0
1
0
10
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
FCH47N60 / FCA47N60 Rev. A
10
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 47 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
10
40
1
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1 ms
10 ms
10
DC
0
10
* Notes :
1. TC = 25°C
-1
10
2. TJ = 150°C
30
20
10
3. Single Pulse
-2
10
0
1
10
2
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [°C]
VDS, Drain-Source Voltage [V]
D = 0 .5
10
-1
Z
* N o te s :
1 . Z θ J C ( t) = 0 .3 ° C /W M a x .
0 .2
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
PDM
0 .0 5
t1
0 .0 2
θJC
(t), Thermal Response
Figure 10. Transient Thermal Response Curve
10
t2
-2
0 .0 1
10
-5
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4
FCH47N60 / FCA47N60 Rev. A
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
tp
tp
5
FCH47N60 / FCA47N60 Rev. A
VDS (t)
VDD
DUT
10V
ID (t)
Time
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
6
FCH47N60 / FCA47N60 Rev. A
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7
FCH47N60 / FCA47N60 Rev. A
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
8
FCH47N60 / FCA47N60 Rev. A
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(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
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affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
9
FCH47N60 / FCA47N60 Rev. A
www.fairchildsemi.com
FCH47N60 / FCA47N60 600V N-Channel MOSFET
TRADEMARKS