STD95N4F3 STP95N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220 STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID Pw STD95N4F3 40 V < 5.8 m Ω 80 A 110 W STP95N4F3 40 V < 6.2 mΩ 80 A 110 W ■ Standard threshold drive ■ 100% avalanche tested 3 3 1 TO-220 2 1 DPAK Applications ■ Switching applications – Automotive Description Figure 1. Internal schematic diagram This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Table 1. Device summary Order codes Marking Package Packaging STD95N4F3 95N4F3 DPAK Tape and reel STP95N4F3 95N4F3 TO-220 Tube September 2009 Doc ID 13288 Rev 3 1/14 www.st.com 14 Contents STD95N4F3, STP95N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 13288 Rev 3 STD95N4F3, STP95N4F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 65 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C 8 V/ns Single pulse avalanche energy 400 mJ Operating junction temperature Storage temperature -55 to 175 °C VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ID (1) ID IDM (2) PTOT dv/dt (3) EAS (4) Tj Tstg Peak diode recovery voltage slope 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj ≤ Tjmax 4. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V Table 3. Thermal resistance Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-a Thermal resistance junction-ambient max Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose DPAK 1.36 °C/W 62.5 °C/W 50 300 °C/W °C 1. When mounted on 1inch² FR-4 2Oz Cu board Doc ID 13288 Rev 3 3/14 Electrical characteristics 2 STD95N4F3, STP95N4F3 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 °C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V Static drain-source on resistance VGS= 10 V, ID= 40 A for DPAK 5.0 5.8 mΩ RDS(on) VGS= 10 V, ID= 40 A for TO-220 5.4 6.2 mΩ V(BR)DSS Table 5. Symbol 40 V 2 Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDS = 25 V, ID=40 A Min Typ. Max. Unit - 100 S VDS =25 V, f=1 MHz, VGS=0 - 2200 580 40 pF pF pF VDD=20 V, ID = 80 A VGS =10 V Figure 14 - 40 11 8 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/14 Min. Typ. Max. Unit Doc ID 13288 Rev 3 54 nC nC nC STD95N4F3, STP95N4F3 Table 6. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V Figure 16 - 15 50 - ns ns td(off) tf Turn-off delay time Fall time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V Figure 16 - 40 15 - ns ns Min. Typ. Max. Unit - 80 320 A A - 1.5 V Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD=80 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, di/dt = 100 A/µs, VDD= 30 V, Tj=150 °C Figure 15 - 45 60 2.8 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13288 Rev 3 5/14 Electrical characteristics STD95N4F3, STP95N4F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature HV29000 RDS(on) (mΩ) 6.5 ID=40A VGS=10V 6.0 5.5 TO-220 DPAK 5.0 4.5 0 6/14 20 40 60 80 ID(A) Doc ID 13288 Rev 3 STD95N4F3, STP95N4F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 13288 Rev 3 7/14 Test circuits 3 STD95N4F3, STP95N4F3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 13288 Rev 3 10% AM01473v1 STD95N4F3, STP95N4F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13288 Rev 3 9/14 Package mechanical data STD95N4F3, STP95N4F3 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/14 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 13288 Rev 3 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STD95N4F3, STP95N4F3 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 13288 Rev 3 11/14 Packaging mechanical data 5 STD95N4F3, STP95N4F3 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 12.1 0.476 1.6 0.059 0.063 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 0.059 1.574 16.3 0.618 0.641 Doc ID 13288 Rev 3 MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 18.4 0.645 0.724 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD95N4F3, STP95N4F3 6 Revision history Revision history Table 8. Dcument revision history Date Revision Changes 22-Feb-2007 1 First release 15-May-2007 2 Changes on applications 10-Sep-2009 3 Removed package, mechanical data: IPAK Doc ID 13288 Rev 3 13/14 STD95N4F3, STP95N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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