Central PROCESS TM CP589 Power Transistors Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL BASE DIE SIZE 80 x 80 MILS DIE THICKNESS 12 MILS BASE BONDING PAD AREA 12 x 18 MILS EMITTER BONDING PAD AREA 13 x 28 MILS TOP SIDE METALIZATION Al - 30,000Å BACK SIDE METALIZATION Cr/Ni/Ag - Ni-6,000Å; Ag-10,000Å GEOMETRY PRINCIPAL DEVICE TYPES CJD42C TIP42C E B BACKSIDE COLLECTOR Please refer to selection guide on page 20 . 55 145 Adams Avenue Hauppauge, NY 11788 USA Phone (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com