CENTRAL CP589

Central
PROCESS
TM
CP589
Power Transistors
Semiconductor Corp.
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
PROCESS
EPITAXIAL BASE
DIE SIZE
80 x 80 MILS
DIE THICKNESS
12 MILS
BASE BONDING PAD AREA
12 x 18 MILS
EMITTER BONDING PAD AREA
13 x 28 MILS
TOP SIDE METALIZATION
Al - 30,000Å
BACK SIDE METALIZATION
Cr/Ni/Ag - Ni-6,000Å; Ag-10,000Å
GEOMETRY
PRINCIPAL DEVICE TYPES
CJD42C
TIP42C
E
B
BACKSIDE COLLECTOR
Please refer to
selection guide on page 20 .
55
145 Adams Avenue
Hauppauge, NY 11788 USA
Phone
(631) 435-1110
Fax
(631) 435-1824
www.centralsemi.com