Freescale Semiconductor Technical Data Document Number: MRF1511 Rev. 4, 5/2006 Replaced by MRF1511NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistor ARCHIVE INFORMATION Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.5 volt portable FM equipment. D • Specified Performance @ 175 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11.5 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal G Impedance Parameters • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request • RF Power Plastic Surface Mount Package S • Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. 175 MHz, 8 W, 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +40 Vdc Gate - Source Voltage VGS ± 20 Vdc Drain Current — Continuous ID 4 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 62.5 0.5 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Symbol Value Unit RθJC 2 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case ARCHIVE INFORMATION MRF1511T1 N - Channel Enhancement - Mode Lateral MOSFET Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1. Calculated based on the formula PD = Rating Package Peak Temperature Unit 1 260 °C TJ – TC RθJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF1511T1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 170 μA) VGS(th) 1.0 1.6 2.1 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.4 — Vdc Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss — 100 — pF Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss — 53 — pF Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss — 8 — pF Common - Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) Gps 10 11.5 — dB Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) η 50 55 — % Off Characteristics On Characteristics Functional Tests (In Freescale Test Fixture) ARCHIVE INFORMATION ARCHIVE INFORMATION Dynamic Characteristics MRF1511T1 2 RF Device Data Freescale Semiconductor VGG C8 + C7 C6 R4 B1 B2 C18 R3 C17 + C15 C16 VDD L4 C5 R2 C1 L1 Z2 C2 L2 Z3 Z4 Z5 Z8 Z9 N2 Z10 C14 C9 C3 L3 DUT C10 C11 C12 RF OUTPUT C13 C4 B1, B2 Short Ferrite Bead, Fair Rite Products (2743021446) C1, C5, C18 120 pF, 100 mil Chip Capacitor C2, C10, C12 0 to 20 pF, Trimmer Capacitor C3 33 pF, 100 mil Chip Capacitor C4 68 pF, 100 mil Chip Capacitor C6, C15 10 μF, 50 V Electrolytic Capacitor C7, C16 1,200 pF, 100 mil Chip Capacitor C8, C17 0.1 μF, 100 mil Chip Capacitor C9 150 pF, 100 mil Chip Capacitor C11 43 pF, 100 mil Chip Capacitor C13 24 pF, 100 mil Chip Capacitor C14 300 pF, 100 mil Chip Capacitor L1, L3 12.5 nH, A04T, Coilcraft L2 26 nH, 4 Turn, Coilcraft L4 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board 15 Ω, 0805 Chip Resistor 1.0 kΩ, 1/8 W Resistor 1.0 kΩ, 0805 Chip Resistor 33 kΩ, 1/8 W Resistor 0.200″ x 0.080″ Microstrip 0.755″ x 0.080″ Microstrip 0.300″ x 0.080″ Microstrip 0.065″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 0.095″ x 0.080″ Microstrip 0.418″ x 0.080″ Microstrip 1.057″ x 0.080″ Microstrip 0.120″ x 0.080″ Microstrip Glass Teflon®, 31 mils, 2 oz. Copper Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 10 −5 8 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) ARCHIVE INFORMATION Z1 Z7 ARCHIVE INFORMATION N1 RF INPUT Z6 R1 155 MHz 135 MHz 6 175 MHz 4 2 VDD = 7.5 V −10 135 MHz 175 MHz −15 155 MHz −20 VDD = 7.5 V 0 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 Figure 2. Output Power versus Input Power 0.7 −25 1 2 3 6 7 4 5 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 3. Input Return Loss versus Output Power MRF1511T1 RF Device Data Freescale Semiconductor 3 TYPICAL CHARACTERISTICS, 135 - 175 MHz 70 155 MHz Eff, DRAIN EFFICIENCY (%) GAIN (dB) 14 135 MHz 175 MHz 12 10 8 ARCHIVE INFORMATION 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 50 175 MHz 40 30 20 9 0 10 Figure 4. Gain versus Output Power VDD = 7.5 V 0 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 80 Eff, DRAIN EFFICIENCY (%) 11 10 9 155 MHz 8 135 MHz 7 175 MHz 6 VDD = 7.5 V Pin = 27 dBm 5 4 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 70 155 MHz 60 175 MHz 50 40 1000 135 MHz VDD = 7.5 V Pin = 27 dBm 0 Figure 6. Output Power versus Biasing Current 400 600 IDQ, BIASING CURRENT (mA) 800 1000 80 175 MHz 10 Eff, DRAIN EFFICIENCY (%) 12 135 MHz 155 MHz 8 6 IDQ = 150 mA Pin = 27 dBm 4 2 200 Figure 7. Drain Efficiency versus Biasing Current 14 Pout , OUTPUT POWER (WATTS) 1 Figure 5. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 135 MHz 10 VDD = 7.5 V 6 155 MHz 60 4 6 8 10 12 14 VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage 16 70 ARCHIVE INFORMATION 16 155 MHz 60 135 MHz 175 MHz 50 40 30 IDQ = 150 mA Pin = 27 dBm 4 6 8 10 12 14 16 VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Drain Efficiency versus Supply Voltage MRF1511T1 4 RF Device Data Freescale Semiconductor VGG C8 C7 + C6 B1 R4 B2 C16 R3 C15 C14 + C13 VDD L4 C5 R2 L1 Z1 C1 Z2 Z3 C2 Z4 Z5 Z6 L3 Z8 N2 Z10 C12 C9 C3 Z9 DUT C10 RF OUTPUT C11 C4 Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 24 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 μF, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 μF, 100 mil Chip Capacitor 380 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitor 82 nH, Coilcraft 55.5 nH, 5 Turn, Coilcraft 39 nH, 6 Turn, Coilcraft C1, C12 C2 C3, C10 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 C11 L1 L2 L3 Z7 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Type N Flange Mount 15 Ω, 0805 Chip Resistor 51 Ω, 1/2 W Resistor 100 Ω, 0805 Chip Resistor 33 kΩ, 1/8 W Resistor 0.136″ x 0.080″ Microstrip 0.242″ x 0.080″ Microstrip 1.032″ x 0.080″ Microstrip 0.145″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 0.134″ x 0.080″ Microstrip 0.490″ x 0.080″ Microstrip 0.872″ x 0.080″ Microstrip 0.206″ x 0.080″ Microstrip Glass Teflon®, 31 mils, 2 oz. Copper ARCHIVE INFORMATION N1 B1, B2 Figure 10. 66 - 88 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 66 - 88 MHz 10 0 77 MHz 8 88 MHz 66 MHz 6 4 2 VDD = 7.5 V 0 0 0.1 VDD = 7.5 V −2 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) ARCHIVE INFORMATION RF INPUT R1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 Figure 11. Output Power versus Input Power −4 −6 −8 88 MHz −10 −12 −14 66 MHz −16 77 MHz −18 0.7 −20 1 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 12. Input Return Loss versus Output Power MRF1511T1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS, 66 - 88 MHz 18 70 88 MHz 12 10 ARCHIVE INFORMATION 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 40 30 20 0 10 VDD = 7.5 V 1 Figure 13. Gain versus Output Power 3 5 6 7 4 Pout, OUTPUT POWER (WATTS) 8 9 10 80 11 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 2 Figure 14. Drain Efficiency versus Output Power 12 77 MHz 9 88 MHz 8 66 MHz 7 6 4 70 60 88 MHz 77 MHz 50 66 MHz VDD = 7.5 V Pin = 25.7 dBm VDD = 7.5 V Pin = 25.7 dBm 5 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 40 1000 0 Figure 15. Output Power versus Biasing Current 400 600 IDQ, BIASING CURRENT (mA) 800 1000 80 Eff, DRAIN EFFICIENCY (%) 12 10 77 MHz 8 66 MHz 88 MHz 6 IDQ = 150 mA Pin = 25.7 dBm 4 2 200 Figure 16. Drain Efficiency versus Biasing Current 14 Pout , OUTPUT POWER (WATTS) 66 MHz 77 MHz 10 VDD = 7.5 V 8 50 5 6 7 8 9 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage 10 70 60 88 MHz 50 77 MHz ARCHIVE INFORMATION Eff, DRAIN EFFICIENCY (%) GAIN (dB) 77 MHz 14 88 MHz 60 66 MHz 16 66 MHz 40 30 IDQ = 150 mA Pin = 25.7 dBm 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) Figure 18. Drain Efficiency versus Supply Voltage MRF1511T1 6 RF Device Data Freescale Semiconductor Zo = 10 Ω 77 66 f = 88 MHz ZOL* f = 175 MHz Zin Zin 155 135 155 Zin f = 88 MHz 77 66 ZOL* 135 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz Zin Ω ZOL* Ω f MHz Zin Ω ZOL* Ω 135 20.1 - j0.5 2.53 - j2.61 66 25.3 - j0.31 3.62 - j0.751 155 17.0 +j3.6 3.01 - j2.48 77 25.6 +j3.62 3.59 - j0.129 175 15.2 +j7.9 2.52 - j3.02 88 26.7 +j6.79 3.37 - j0.173 = Complex conjugate of source impedance with parallel 15 Ω resistor and 68 pF capacitor in series with gate. (See Figure 1). Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. = Complex conjugate of source impedance with parallel 15 Ω resistor and 24 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in ARCHIVE INFORMATION ARCHIVE INFORMATION f = 175 MHz Z * OL Figure 19. Series Equivalent Input and Output Impedance MRF1511T1 RF Device Data Freescale Semiconductor 7 Table 5. Common Source Scattering Parameters (VDD = 7.5 Vdc) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 30 0.88 - 165 18.92 95 0.015 8 0.84 - 169 50 0.88 - 171 11.47 91 0.016 -5 0.84 - 173 100 0.87 - 175 5.66 85 0.016 -7 0.84 - 176 150 0.87 - 176 3.75 82 0.015 -5 0.85 - 176 200 0.87 - 177 2.78 78 0.014 -6 0.84 - 176 250 0.87 - 177 2.16 75 0.014 - 10 0.85 - 176 300 0.88 - 177 1.77 72 0.012 - 17 0.86 - 176 350 0.88 - 177 1.49 69 0.013 - 11 0.86 - 176 400 0.88 - 177 1.26 66 0.013 - 17 0.87 - 175 450 0.88 - 177 1.08 64 0.011 - 20 0.87 - 175 500 0.89 - 176 0.96 63 0.012 - 20 0.88 - 175 IDQ = 800 mA S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 30 0.89 - 166 18.89 95 0.014 10 0.85 - 170 50 0.88 - 172 11.44 91 0.015 8 0.84 - 174 100 0.87 - 175 5.65 86 0.016 -2 0.85 - 176 150 0.87 - 177 3.74 82 0.014 -8 0.84 - 177 200 0.87 - 177 2.78 78 0.013 - 18 0.85 - 177 250 0.88 - 177 2.16 75 0.012 - 11 0.85 - 176 300 0.88 - 177 1.77 73 0.015 - 15 0.86 - 176 350 0.88 - 177 1.50 70 0.009 -7 0.87 - 176 400 0.88 - 177 1.26 67 0.012 -3 0.87 - 176 450 0.88 - 177 1.09 65 0.012 - 18 0.87 - 175 500 0.89 - 177 0.97 64 0.009 - 10 0.88 - 175 IDQ = 1.5 A S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 30 0.90 - 168 17.89 95 0.013 2 0.86 - 172 50 0.89 - 173 10.76 91 0.013 3 0.86 - 175 100 0.88 - 176 5.32 86 0.014 - 19 0.86 - 177 150 0.88 - 177 3.53 83 0.013 -6 0.86 - 177 200 0.88 - 177 2.63 80 0.011 -4 0.86 - 177 250 0.88 - 178 2.05 77 0.012 - 14 0.86 - 177 300 0.88 - 177 1.69 75 0.013 -2 0.87 - 177 350 0.89 - 177 1.43 72 0.010 -9 0.87 - 176 400 0.89 - 177 1.22 70 0.014 -3 0.88 - 176 450 0.89 - 177 1.06 68 0.011 -8 0.88 - 176 500 0.89 - 177 0.94 67 0.011 - 15 0.88 - 176 ARCHIVE INFORMATION ARCHIVE INFORMATION IDQ = 150 mA MRF1511T1 8 RF Device Data Freescale Semiconductor DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. ARCHIVE INFORMATION ARCHIVE INFORMATION APPLICATIONS INFORMATION MRF1511T1 RF Device Data Freescale Semiconductor 9 Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two - port stability analysis with this device’s S - parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Freescale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. ARCHIVE INFORMATION ARCHIVE INFORMATION MOUNTING The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Freescale Application Note AN4005/D, “Thermal Management and Mounting Method for the PLD - 1.5 RF Power Surface Mount Package,” and Engineering Bulletin EB209/D, “Mounting Method for RF Power Leadless Surface Mount Transistor” for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” MRF1511T1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 0.146 3.71 A F 0.095 2.41 3 B D 1 2 R 0.115 2.92 0.115 2.92 L 0.020 0.51 4 0.35 (0.89) X 45_" 5 _ N K Q ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉÉÉ C 4 ZONE W 1 2 3 S G ZONE X VIEW Y - Y mm SOLDER FOOTPRINT P U H ZONE V inches 10_DRAFT Y Y E NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 MRF1511T1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF1511T1 Document Number: MRF1511 Rev. 4, 5/2006 12 RF Device Data Freescale Semiconductor