Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 11.5 dB Efficiency — 60% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz • Broadband Demonstration Amplifier Information Available Upon Request • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 470 MHz, 70 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1366 - 05, STYLE 1 TO - 272 - 8 WRAP PLASTIC MRF1570NT1 CASE 1366A - 03, STYLE 1 TO - 272 - 8 PLASTIC MRF1570FNT1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS +0.5, +40 Vdc Gate - Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 165 0.5 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.29 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF1570NT1 MRF1570FNT1 1 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDSS — — 1 μA Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 0.8 mAdc) VGS(th) 1 — 3 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — — 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss — — 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss — — 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss — — 35 pF Gps — 11.5 — dB η — 60 — % Off Characteristics Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) On Characteristics Dynamic Characteristics RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz MRF1570NT1 MRF1570FNT1 2 RF Device Data Freescale Semiconductor B1 VGG C14 C13 C12 B3 + C11 C10 C38 R1 Z2 RF INPUT C1 Z1 C2 L1 Z4 C4 L3 Z6 R3 Z8 C8 C36 Z12 L9 Z14 Z16 C20 C22 C24 Z10 C6 B4 C37 L5 C26 C35 L7 Z22 C21 Z5 C5 L4 Z7 C23 C25 C27 Z9 Z11 Z13 Z15 B2 C19 C18 C17 Z17 L6 C32 + C16 L8 Z19 C29 L10 R2 VGG C30 RF OUTPUT Z21 C9 C7 Z18 Z20 R4 L2 + VDD C33 C28 DUT C3 Z3 C34 C31 B5 C15 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C32, C37, C43 270 pF, 100 mil Chip Capacitors C2, C20, C21 33 pF, 100 mil Chip Capacitors C3 18 pF, 100 mil Chip Capacitor C4, C5 30 pF, 100 mil Chip Capacitors C6, C7 180 pF, 100 mil Chip Capacitors C8, C9 150 pF, 100 mil Chip Capacitors C10, C15 300 pF, 100 mil Chip Capacitors C11, C16, C33, C39 10 μF, 50 V Electrolytic Capacitors C12, C17, C34, C40 0.1 μF, 100 mil Chip Capacitors C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors C22, C23 110 pF, 100 mil Chip Capacitors C24, C25 68 pF, 100 mil Chip Capacitors C26, C27 120 pF, 100 mil Chip Capacitors C28, C29 24 pF, 100 mil Chip Capacitors C30, C31 27 pF, 100 mil Chip Capacitors C38, C44 240 pF, 100 mil Chip Capacitors L1, L2 17.5 nH, 6 Turn Inductors, Coilcraft C44 C43 L3, L4 L5, L6, L7, L8 L9, L10 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9, Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22 Board B6 C42 C41 C40 + VDD C39 5 nH, 2 Turn Inductors, Coilcraft 1 Turn, #18 AWG, 0.33″ ID Inductors 3 Turn, #16 AWG, 0.165″ ID Inductors Type N Flange Mounts 25.5 Ω Chip Resistors (1206) 9.3 Ω Chip Resistors (1206) 0.32″ x 0.080″ Microstrip 0.46″ x 0.080″ Microstrip 0.34″ x 0.080″ Microstrip 0.45″ x 0.080″ Microstrip 0.28″ x 0.240″ Microstrip 0.39″ x 0.080″ Microstrip 0.27″ x 0.080″ Microstrip 0.25″ x 0.080″ Microstrip 0.29″ x 0.080″ Microstrip 0.14″ x 0.080″ Microstrip 0.32″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 3 VDD VGG C11 B3 B4 B1 GND C6 C1 C10 L1 C4 C3 C5 L5 C8 R3 R4 C9 L4 L2 C7 C17 C18 C19 C28 C36 C35 C34 C20 C24 R1 L3 C2 GND C37 C38 C12 C13 C14 C33 L9 L7 C30 C26 C22 C23 C31 C27 L10 R2 C15 C32 L8 L6 C29 C42 C41 C40 C21 C25 C44 C43 B5 B6 B2 C16 C39 MRF1570T1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 135 - 175 MHz 0 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 100 80 135 MHz 60 175 MHz 40 150 MHz 20 −5 135 MHz −10 175 MHz 155 MHz −15 VDD = 12.5 Vdc VDD = 12.5 Vdc 0 −20 0 1 2 3 4 5 6 10 20 30 40 50 60 70 80 90 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 3. Output Power versus Input Power Figure 4. Input Return Loss versus Output Power MRF1570NT1 MRF1570FNT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS, 135 - 175 MHz 18 70 155 MHz VDD = 12.5 Vdc G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%) 155 MHz 17 175 MHz 135 MHz 16 15 14 13 60 175 MHz 50 135 MHz 40 30 VDD = 12.5 Vdc 12 10 20 30 40 50 60 70 80 20 10 90 30 50 60 70 80 90 Figure 5. Gain versus Output Power Figure 6. Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%) 100 135 MHz 80 175 MHz 155 MHz 70 60 600 800 1000 1200 1400 80 155 MHz 60 175 MHz 135 MHz 40 20 VDD = 12.5 Vdc Pin = 36 dBm 50 400 VDD = 12.5 Vdc Pin = 36 dBm 0 400 1600 600 800 1000 1200 1400 1600 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 7. Output Power versus Biasing Current Figure 8. Drain Efficiency versus Biasing Current 100 100 80 η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 40 Pout, OUTPUT POWER (WATTS) 90 Pout , OUTPUT POWER (WATTS) 20 Pout, OUTPUT POWER (WATTS) 135 MHz 175 MHz 155 MHz 60 40 20 Pin = 36 dBm IDQ = 800 mA 0 10 155 MHz 80 175 MHz 135 MHz 60 40 20 Pin = 36 dBm IDQ = 800 mA 0 11 12 13 14 15 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Output Power versus Supply Voltage Figure 10. Drain Efficiency versus Supply Voltage MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 5 B1 VGG C14 C13 C12 + B3 C11 C10 C9 R1 Z3 R3 RF INPUT Z1 Z5 Z7 Z9 C2 Z11 C21 DUT C5 Z2 C36 C35 C34 + VDD C33 L3 Z17 L5 C7 C1 B4 C37 Z13 C23 Z15 L1 C25 C27 Z19 C3 C22 C4 C24 C31 C29 RF OUTPUT C32 R4 Z4 Z6 C6 R2 Z8 Z10 Z12 C8 C20 C19 C18 + C17 Z16 L2 C26 L4 Z18 C28 C30 L6 B2 VGG Z14 B5 C16 C15 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C9, C15, C32 270 pF, 100 mil Chip Capacitors C2, C3 7.5 pF, 100 mil Chip Capacitors C4 5.1 pF, 100 mil Chip Capacitor C5, C6 180 pF, 100 mil Chip Capacitors C7, C8 47 pF, 100 mil Chip Capacitors C10, C16, C37, C42 120 pF, 100 mil Chip Capacitors C11, C17, C33, C38 10 μF, 50 V Electrolytic Capacitors C12, C18, C34, C39 470 pF, 100 mil Chip Capacitors C13, C19, C35, C40 1200 pF, 100 mil Chip Capacitors C14, C20, C36, C41 0.1 μF, 100 mil Chip Capacitors C21, C22 33 pF, 100 mil Chip Capacitors C23, C24 27 pF, 100 mil Chip Capacitors C25, C26 15 pF, 100 mil Chip Capacitors C27, C28 2.2 pF, 100 mil Chip Capacitors C29, C30 6.2 pF, 100 mil Chip Capacitors C31 1.0 pF, 100 mil Chip Capacitor C42 L1, L2, L3, L4 L5, L6 N1, N2 R1, R2 R3, R4 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19 Board B6 C41 C40 C39 + VDD C38 1 Turn, #18 AWG, 0.085″ ID Inductors 2 Turn, #16 AWG, 0.165″ ID Inductors Type N Flange Mounts 25.5 Ω Chip Resistors (1206) 10 Ω Chip Resistors (1206) 0.240″ x 0.080″ Microstrip 0.185″ x 0.080″ Microstrip 1.500″ x 0.080″ Microstrip 0.150″ x 0.240″ Microstrip 0.140″ x 0.240″ Microstrip 0.140″ x 0.240″ Microstrip 0.150″ x 0.240″ Microstrip 0.270″ x 0.080″ Microstrip 0.680″ x 0.080″ Microstrip 0.320″ x 0.080″ Microstrip 0.380″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic MRF1570NT1 MRF1570FNT1 6 RF Device Data Freescale Semiconductor VDD VGG C11 GND B3 B4 C10 B1 C33 GND C37 C12 C13 C14 C1 C9 C5 R1 C2 C4 C3 R2 C7 R3 R4 C8 C21 C23 L5 L1 C25 C26 C22 C24 C6 C31 L2 L6 C32 C30 L4 C15 C18 C19 C20 C27 C34 C35 C36 L3 C29 C28 C39 C40 C41 C42 B2 B5 B6 C16 C17 C38 MRF1570T1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 400 - 470 MHz 0 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 100 80 400 MHz 60 440 MHz 470 MHz 40 20 VDD = 12.5 Vdc −5 −10 440 MHz −15 400 MHz VDD = 12.5 Vdc 470 MHz 0 −20 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 13. Output Power versus Input Power Figure 14. Input Return Loss versus Output Power MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS, 400 - 470 MHz 17 70 15 60 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 400 MHz 440 MHz 13 470 MHz 11 9 7 470 MHz 400 MHz 50 440 MHz 40 30 20 10 VDD = 12.5 Vdc VDD = 12.5 Vdc 5 0 0 10 20 30 40 50 60 80 70 0 10 20 Pout, OUTPUT POWER (WATTS) Figure 15. Gain versus Output Power 40 50 60 70 80 Figure 16. Drain Efficiency versus Output Power 80 η, DRAIN EFFICIENCY (%) 100 Pout , OUTPUT POWER (WATTS) 90 470 MHz 440 MHz 400 MHz 70 60 VDD = 12.5 Vdc Pin = 38 dBm 50 400 600 800 1000 1200 1400 80 470 MHz 400 MHz 60 440 MHz 40 20 VDD = 12.5 Vdc Pin = 38 dBm 0 400 1600 600 800 IDQ, BIASING CURRENT (mA) 1000 1200 1400 1600 IDQ, BIASING CURRENT (mA) Figure 17. Output Power versus Biasing Current Figure 18. Drain Efficiency versus Biasing Current 100 100 400 MHz 90 η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 30 Pout, OUTPUT POWER (WATTS) 470 MHz 80 440 MHz 70 60 Pin = 38 dBm IDQ = 800 mA 50 40 10 11 12 13 14 80 400 MHz 60 440 MHz 470 MHz 40 Pin = 38 dBm IDQ = 800 mA 20 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 19. Output Power versus Supply Voltage 0 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 20. Drain Efficiency versus Supply Voltage MRF1570NT1 MRF1570FNT1 8 RF Device Data Freescale Semiconductor B1 VGG C13 C12 C11 + B3 C10 C9 C8 R1 Z2 Z4 RF INPUT R3 Z6 Z8 Z10 C6 C4 Z1 Z12 C20 DUT C31 C30 + VDD C29 Z14 Z16 L1 Z18 C24 C22 Z20 C21 R4 Z3 Z5 Z7 C5 R2 C3 Z9 Z11 C18 C17 + C16 C23 Z13 C26 RF OUTPUT C28 Z15 C7 Z17 L2 Z19 C25 C27 L4 B2 VGG C19 C32 L3 C2 C1 B4 C33 B5 C15 C14 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C8, C14, C28 270 pF, 100 mil Chip Capacitors C2, C3 10 pF, 100 mil Chip Capacitors C4, C5 180 pF, 100 mil Chip Capacitors C6, C7 47 pF, 100 mil Chip Capacitors C9, C15, C33, C38 120 pF, 100 mil Chip Capacitors C10, C16, C29, C34 10 μF, 50 V Electrolytic Capacitors C11, C17, C30, C35 470 pF, 100 mil Chip Capacitors C12, C18, C31, C36 1200 pF, 100 mil Chip Capacitors C13, C19, C32, C37 0.1 μF, 100 mil Chip Capacitors C20, C21 22 pF, 100 mil Chip Capacitors C22, C23 20 pF, 100 mil Chip Capacitors C24, C25, C26, C27 5.1 pF, 100 mil Chip Capacitors L1, L2 1 Turn, #18 AWG, 0.115″ ID Inductors L3, L4 2 Turn, #16 AWG, 0.165″ ID Inductors C38 B6 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20 Board C37 C36 C35 + VDD C34 Type N Flange Mounts 1.0 kΩ Chip Resistors (1206) 10 Ω Chip Resistors (1206) 0.40″ x 0.080″ Microstrip 0.26″ x 0.080″ Microstrip 1.35″ x 0.080″ Microstrip 0.17″ x 0.240″ Microstrip 0.12″ x 0.240″ Microstrip 0.14″ x 0.240″ Microstrip 0.15″ x 0.240″ Microstrip 0.18″ x 0.172″ Microstrip 1.23″ x 0.080″ Microstrip 0.12″ x 0.080″ Microstrip 0.40″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 9 VDD VGG C10 B1 GND C29 B3 B4 GND C33 C9 C13 C12 C11 C8 C4 R1 C2 C1 C3 R2 C30 C31 C32 L1 C6 R3 R4 C7 C24 C20 C22 L3 C28 C21 C23 L4 C19 C18 C17 C27 C25 C5 C14 C26 L2 C35 C36 C37 C15 C38 B5 B6 B2 C16 C34 MRF1570T1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 450 - 520 MHz 0 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 100 80 470 MHz 60 450 MHz 500 MHz 40 520 MHz 20 −5 −10 470 MHz 500 MHz −15 450 MHz 520 MHz −20 VDD = 12.5 Vdc VDD = 12.5 Vdc 0 −25 0 1 2 3 4 5 6 7 Pin, INPUT POWER (WATTS) Figure 23. Output Power versus Input Power 8 0 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) Figure 24. Input Return Loss versus Output Power MRF1570NT1 MRF1570FNT1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS, 450 - 520 MHz 15 70 450 MHz 470 MHz 500 MHz 13 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 14 520 MHz 12 11 10 60 520 MHz 500 MHz 450 MHz 50 470 MHz 40 30 VDD = 12.5 Vdc VDD = 12.5 Vdc 9 0 10 20 30 40 50 60 70 80 20 10 90 20 30 Pout, OUTPUT POWER (WATTS) Figure 25. Gain versus Output Power 60 70 80 90 80 80 η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 50 Figure 26. Drain Efficiency versus Output Power 90 450 MHz 470 MHz 500 MHz 70 520 MHz 60 70 520 MHz 500 MHz 60 470 MHz 50 450 MHz VDD = 12.5 Vdc Pin = 38 dBm VDD = 12.5 Vdc Pin = 38 dBm 50 400 800 1200 1600 40 400 800 IDQ, BIASING CURRENT (mA) 1200 1600 IDQ, BIASING CURRENT (mA) Figure 27. Output Power versus Biasing Current Figure 28. Drain Efficiency versus Biasing Current 80 100 90 η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 40 Pout, OUTPUT POWER (WATTS) 80 70 450 MHz 470 MHz 500 MHz 520 MHz 60 50 70 520 MHz 500 MHz 60 470 MHz 450 MHz 50 Pin = 38 dBm IDQ = 800 mA 40 30 10 11 12 13 14 Pin = 38 dBm IDQ = 800 mA 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 29. Output Power versus Supply Voltage 40 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 30. Drain Efficiency versus Supply Voltage MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 11 TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 1011 1010 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 31. MTTF Factor versus Junction Temperature MRF1570NT1 MRF1570FNT1 12 RF Device Data Freescale Semiconductor ZOL* f = 135 MHz f = 175 MHz f = 135 MHz Zin Zo = 5 Ω f = 175 MHz f = 400 MHz f = 470 MHz Zo = 5 Ω Zin f = 520 MHz ZOL* f = 400 MHz f = 450 MHz f = 450 MHz ZOL* Zin f = 470 MHz f = 520 MHz VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz Zin Ω ZOL* Ω f MHz Zin Ω ZOL* Ω f MHz Zin Ω ZOL* Ω 135 2.8 +j0.05 0.65 +j0.42 400 0.92 - j0.71 1.05 - j1.10 450 0.94 - j1.12 0.61 - j1.14 155 3.9 +j0.34 1.01 +j0.63 440 1.12 - j1.11 0.83 - j1.45 470 1.03 - j1.17 0.62 - j1.12 175 2.4 - j0.47 0.71 +j0.37 470 0.82 - j0.79 0.59 - j1.43 500 0.95 - j1.71 0.75 - j1.03 520 0.62 - j1.74 0.77 - j0.97 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Notes: Impedance Zin was measured with input terminated at 50 W. Impedance ZOL was measured with output terminated at 50 W. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 32. Series Equivalent Input and Output Impedance MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 13 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 800 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MRF1570NT1 MRF1570FNT1 14 RF Device Data Freescale Semiconductor AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large - signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. See Freescale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS MRF1570NT1 MRF1570FNT1 16 RF Device Data Freescale Semiconductor MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 17 MRF1570NT1 MRF1570FNT1 18 RF Device Data Freescale Semiconductor MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 19 MRF1570NT1 MRF1570FNT1 20 RF Device Data Freescale Semiconductor MRF1570NT1 MRF1570FNT1 RF Device Data Freescale Semiconductor 21 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN211A: Field Effect Transistors in Theory and Practice • AN215A: RF Small - Signal Design Using Two - Port Parameters • AN721: Impedance Matching Networks Applied to RF Power Transistors • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages • AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 9 June 2008 Description • Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance values in the functional test table on p. 2 • Replaced Case Outline 1366 - 04 with 1366 - 05, Issue E, p. 1, 16 - 18. Removed Drain - ID label from View Y - Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. • Replaced Case Outline 1366A - 02 with 1366A - 03, Issue D, p. 1, 19 - 21. Removed Drain - ID label from View Y - Y. Removed Surface Alignment tolerance label for cross hatched section on View Y - Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3. • Added Product Documentation and Revision History, p. 22 MRF1570NT1 MRF1570FNT1 22 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF1570NT1 MRF1570FNT1 Document Number: RF Device Data MRF1570N Rev. 9, 6/2008Semiconductor Freescale 23