2SK3352 Ordering number : ENN8125 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V ID 45 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 80 A 1.65 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25˚C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V 30 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=20A 1.0 RDS(on)1 RDS(on)2 ID=20A, VGS=10V ID=10A, VGS=4.5V Input Capacitance Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS td(off) tf Unit max V ±10 µA µA 2.4 V 11 15 mΩ 15 21 mΩ 1 19 27 S 1400 pF 420 pF VDS=10V, f=1MHz See specified Test Circuit. 210 pF 14 ns See specified Test Circuit. 530 ns See specified Test Circuit. 100 ns See specified Test Circuit. 150 ns Marking : K3352 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005QA MS IM TA-2658 No.8125-1/4 2SK3352 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=20A 28 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=20A 4.6 nC Gate-to-Drain Charge Qgd VDS=10V, VGS=10V, ID=20A Diode Forward Voltage VSD IS=45A, VGS=0V 4.5 0.2 3.0 11.0 (9.4) 0.4 1 2 3 0.8 0 to 0.3 1.2 2.7 3 2.7 1 : Gate 2 : Drain 3 : Source 2.55 2.55 2.55 0.4 2.55 2.55 2 1.35 1.5MAX 9.9 8.8 20.9 1.2 8.8 0.2 1.3 1.6 11.5 4.5 10.2 1.3 1 V Package Dimensions unit : mm 7001-003 10.2 0.8 nC 1.2 1.4 Package Dimensions unit : mm 7513-002 5 1.0 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : SMP Package Dimensions unit : mm 7042-001 SANYO : SMP-FD Switching Time Test Circuit VDD=15V 4.5 10.2 1.3 8.8 ID=20A RL=0.75Ω VIN D VOUT G 2.5 2.0 2 VIN PW=10µs D.C.≤1% 0.8 9.9 1.6 3 P.G 50Ω S 0.8 2.55 2SK3352 1.5 1.2 2.55 0.4 2.7 4.5 1 10V 0V 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FA No.8125-2/4 2SK3352 ID -- VDS 6 3.0V VDS=10V 14 VGS=2.5V 4 12 Tc=75 °C 25°C --25°C 8 ID -- VGS 16 Drain Current, ID -- A Drain Current, ID -- A 10 3.5V 10.0V 8.0V 6.0V 4.5V 12 10 8 6 4 2 2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 50 0.5 IT02766 4.0 IT02767 RDS(on) -- Tc 30 10A 30 25 20 15 10 5 4 6 8 10 12 14 16 yfs -- ID 100 7 5 3 2 10 7 5 3 2 °C 1.0 7 5 3 2 = Tc C 5° °C 75 --2 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 7 5 5 --50 --25 0 25 50 75 100 125 150 Case Temperature, Tc -- °C VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.6 0.7 0.1 7 5 3 2 0.3 0.4 0.5 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V IT02770 1.2 IT02771 Ciss, Coss, Crss -- VDS 10000 VDS=15V VGS=10V 175 IT07200 IS -- VSD 0.01 0.2 2 3 SW Time -- ID 1000 10 100 7 5 3 2 25 =10V , VGS 0A I D=2 IT07199 VDS=10V 0.01 0.001 2 3 5 70.01 2 3 5 7 0.1 f=1MHz 7 5 3 Ciss, Coss, Crss -- pF 3 2 td(off) 100 tf 7 5 tr Switching Time, SW Time -- ns 20 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V 18 I D= 15 5°C 2 V 4.5 S= , VG 10A 0 --75 0 0 20 Tc= 7 35 25 --25° C ID=20A 40 25°C 45 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Tc=25°C 3 2 td(on) 2 Ciss 1000 7 5 Coss 3 Crss 2 10 7 5 3 0.1 100 7 5 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 IT02772 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT02773 No.8125-3/4 2SK3352 VGS -- Qg 10 100 7 5 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 1 0 2 4 6 8 10 12 14 16 18 20 22 Total Gate Charge, Qg -- nC 26 <10µs 100 1m µs ID=45A s 10 m DC 100 s op ms era tio n 10 7 5 3 2 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 28 Allowable Power Dissipation, PD -- W 1.5 1.0 0.5 0 5 7 1.0 2 3 5 7 10 2 3 5 7 IT08368 PD -- Tc 50 1.65 2 3 Drain-to-Source Voltage, VDS -- V IT07201 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 24 IDP=80A 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 0.01 2 3 5 7 0.1 2 0 ASO 2 VDS=10V ID=20A 40 30 20 10 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- °C 140 160 IT08369 0 20 40 60 80 100 120 140 Case Tamperature, Tc -- °C 160 IT08370 Note on usage : Since the 2SK3352 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8125-4/4