2SK3706 Ordering number : ENN7766 2SK3706 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 Gate-to-Source Voltage VGSS ±20 V ID 12 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 48 A 2.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 18 mJ Avalanche Current *2 IAV 12 A Tc=25°C *1 VDD=20V, L=200µH, IAV=12A *2 L≤200µH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS(off) yfs VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A RDS(on)1 RDS(on)2 ID=6A, VGS=10V ID=6A, VGS=4V Ratings min typ Unit max 100 V 1 ±10 1.2 7 Marking : K3706 2.6 10 µA µA V S 100 130 mΩ 120 160 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73004QA TS IM TA-101121 No.7766-1/5 2SK3706 Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 880 Output Capacitance 80 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 55 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11.5 ns Rise Time tr td(off) See specified Test Circuit. 16 ns See specified Test Circuit. 97 ns tf See specified Test Circuit. 45 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=50V, VGS=10V, ID=12A 24 nC Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=12A 3.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=12A Diode Forward Voltage VSD IS=12A, VGS=0 5.5 nC 0.92 1.2 V Package Dimensions unit : mm 2063A 4.5 2.8 3.5 7.2 10.0 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 1 2 1 : Gate 2 : Drain 3 : Source 3 2.55 2.4 2.55 2.55 SANYO : TO-220ML 2.55 Switching Time Test Circuit Unclamped Inductive Test Circuit VDD=50V VIN 10V 0V L ID=6A RL=8.33Ω VIN D ≥50Ω DUT VOUT PW=10µs D.C.≤1% 10V 0V G 50Ω VDD 2SK3706 P.G 50Ω S No.7766-2/5 2SK3706 8V 20 8 6 VGS=3V 5 2 --25 25 °C 4 10 C 10 15 75° 12 °C Drain Current, ID -- A V 10 14 Tc= 16 Drain Current, ID -- A VDS=10V 4V 6V 75° C Tc=25°C 18 ID -- VGS 25 Tc= --25 2 °C 5°C ID -- VDS 20 0 0 0.5 0 1.0 1.5 2.0 2.5 3.0 Drain-to-Source Voltage, VDS -- V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 180 0.5 IT07021 5.0 IT07022 RDS(on) -- Tc 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=6A 160 140 Tc=75°C 120 25°C 100 --25°C 80 60 3 4 5 6 7 8 10 9 Gate-to-Source Voltage, VGS -- V 1.5 1.0 0 25 50 75 100 125 Case Temperature, Tc -- °C 0 25 3 2 1.0 7 5 3 2 50 75 100 125 150 IT07024 yfs -- ID VDS=10V 3 2 °C 25 10 7 = Tc 5 5 --2 °C 75 °C 3 2 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 3 IT07026 SW Time -- ID VDD=50V VGS=10V 2 Switching Time, SW Time -- ns 10 7 5 Tc=7 5°C 25°C --25°C Forward Drain Current, IF -- A --25 3 3 2 0.1 7 5 50 IT07025 VGS=0 3 2 100 1.0 150 IF -- VSD 5 V 10 S= VG 6A, I D= Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Cutoff Voltage, VGS(off) -- V 2.0 --25 150 5 VDS=10V ID=1mA 0.5 --50 4V S= , VG 6A I D= IT07023 VGS(off) -- Tc 2.5 200 0 --50 40 2 250 td (off) 100 7 tf 5 3 2 tr td(on) 10 7 5 0.01 0 0.3 0.6 0.9 1.2 Diode Forward Voltage, VSD -- V 1.5 IT07027 3 0.1 2 3 5 7 1.0 2 3 5 7 Drain Current, ID -- A 10 2 3 5 IT07028 No.7766-3/5 2SK3706 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 Ciss, Coss, Crss -- pF Gate-to-Source Voltage, VGS -- V Ciss 7 5 3 2 Coss Crss 100 7 5 8 7 6 5 4 3 2 1 3 0 2 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 0 30 1m ID=12A Allowable Power Dissipation, PD -- W 2 D 1 10 0m 0m s s C 3 op er 2 at s 10 7 5 io n Operation in this area is limited by RDS(on). 1.0 7 5 3 Tc=25°C Single pulse 2 0.1 0.1 2 3 10 20 15 Total Gate Charge, Qg -- nC 25 IT07030 PD -- Ta 2.5 <10µs 10 µs 10 0µ s IDP=48A 3 5 IT07029 ASO 7 5 Drain Current, ID -- A VDS=50V ID=12A 9 1000 2.0 1.5 1.0 0.5 0 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- 2 5 7 100 IT07031 V 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07032 PD -- Tc 25 Allowable Power Dissipation, PD -- W VGS -- Qg 10 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07033 No.7766-4/5 2SK3706 Note on usage : Since the 2SK3706 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2004. Specifications and information herein are subject to change without notice. PS No.7766-5/5