5LN01M Ordering number : EN6137A SANYO Semiconductors DATA SHEET 5LN01M N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 Gate-to-Source Voltage VGSS ±10 V ID 0.1 A Drain Current (DC) Drain Current (Pulse) IDP Allowable Power Dissipation PD PW≤10µs, duty cycle≤1% V 0.4 A 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS Conditions Ratings min typ Unit max 50 VDS=10V, ID=100µA VDS=10V, ID=50mA 0.4 Forward Transfer Admittance IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=50V, VGS=0V VGS=±8V, VDS=0V Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=50mA, VGS=4V ID=30mA, VGS=2.5V Input Capacitance RDS(on)3 Ciss ID=10mA, VGS=1.5V VDS=10V, f=1MHz 6.6 pF VDS=10V, f=1MHz VDS=10V, f=1MHz 4.7 pF 1.7 pF Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : YB 0.13 V 1 µA ±10 µA 1.3 0.18 V S 6 7.8 Ω 7.1 9.9 Ω 10 20 Ω Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 31506PE MS IM TB-00002111 / 31000 TS (KOTO) TA-2048 No.6137-1/4 5LN01M Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 18 ns Rise Time tr td(off) See specified Test Circuit. 42 ns See specified Test Circuit. 190 ns tf See specified Test Circuit. 105 ns Qg VDS=10V, VGS=10V, ID=100mA 1.57 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=100mA VDS=10V, VGS=10V, ID=100mA 0.20 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=100mA, VGS=0V 0.85 Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions 0.32 0.15 0.2 0.425 4V 0V 3 VDD=25V VIN ID=50mA RL=500Ω VOUT VIN PW=10µs D.C.≤1% 0 to 0.1 1.25 2.1 V Switching Time Test Circuit unit : mm 7023-010 0.3 nC 1.2 D G 5LN01M 0.425 1 2 0.65 0.65 P.G 0.3 50Ω 0.6 S 0.9 2.0 1 : Gate 2 : Source 3 : Drain SANYO : MCP ID -- VDS 5V V 2.0 2. 0.05 0.04 0.03 25° C 5°C 0.12 0.10 0.08 0.06 0.02 0.04 0.01 0.02 0 0 0 0.2 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 1.0 0 10 9 50mA ID=30mA 7 6 5 4 1.5 2.0 2.5 3.0 IT00055 RDS(on) -- ID 100 VGS=4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 11 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 8 0.5 IT00054 RDS(on) -- VGS 12 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.14 75° C 6.0 V VGS=1.5V Ta=-2 0.16 0.07 0.06 VDS=10V 0.18 Drain Current, ID -- A 4.0V 0.08 Drain Current, ID -- A 3.0 3.5V 0.09 ID -- VGS 0.20 V 0.10 5 3 2 10 Ta=75°C 25°C --25°C 7 5 3 2 3 2 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT00056 1.0 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00057 No.6137-2/4 5LN01M RDS(on) -- ID 100 5 3 2 Ta=75°C 10 7 5 25°C --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 5 1.0 IT00058 Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω .5V 2 S= , VG A 0m 8 =3 ID 0V A, m 50 I D= 6 =4. V GS 4 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 7 --25 °C 2 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 2 2 10 Ciss Coss 3 2 Crss 15 20 25 30 2 0.01 3 5 7 0.1 IT00059 yfs -- ID VDS=10V 5 3 5 °C -2 Ta=- 2 75°C 25°C 0.1 7 5 3 2 2 3 5 7 2 0.1 3 5 7 1.0 IT00061 SW Time -- ID VDD=25V VGS=4V 5 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 2 3 5 7 10 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA 8 7 6 5 4 3 2 1 1.0 10 7 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 5 5 7 9 0 3 10 0.01 1.2 5 5 2 IT00062 7 Ciss, Coss, Crss -- pF 3 7 f=1MHz 7 --25°C 5 1000 Ciss, Coss, Crss -- VDS 100 7 Drain Current, ID -- A Switching Time, SW Time -- ns 3 Ta =7 5° C 25 °C Source Current, IS -- A 5 7 25°C IT00060 VGS=0V 0.1 Ta=75°C 10 0.01 0.01 160 IS -- VSD 1.0 2 1.0 12 10 3 Drain Current, ID -- A RDS(on) -- Ta 14 5 1.0 0.001 7 Drain Current, ID -- A VGS=1.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 RDS(on) -- ID 100 VGS=2.5V 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT00064 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 1.8 IT00065 No.6137-3/4 5LN01M PD -- Ta Allowable Power Dissipation, PD -- W 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00066 Note on usage : Since the 5LN01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.6137-4/4