VEC2811 Ordering number : ENN8287 VEC2811 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --30 ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V ±20 V --3 A PW≤10µs, duty cycle≤1% --12 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO IFSM 50Hz sine wave, 1 cycle 30 V 30 V 2 A 5 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : BY Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70505PE MS IM TB-00001099 No.8287-1/6 VEC2811 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V --30 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.0 yfs RDS(on)1 VDS=--10V, ID=--1.5A 2.0 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance RDS(on)2 Ciss ID=--1.5A, VGS=--10V ID=--0.7A, VGS=--4V V --1 µA ±10 µA --2.4 3.4 V S 65 86 mΩ 117 168 mΩ Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 510 Output Capacitance 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 17 ns See specified Test Circuit. 53 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge pF See specified Test Circuit. 35 ns VDS=--10V, VGS=--10V, ID=--3A 11 nC 2.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A VDS=--10V, VGS=--10V, ID=--3A Diode Forward Voltage VSD IS=--3A, VGS=0V 1.7 nC --0.87 --1.2 V 0.4 0.45 V 1.25 mA [SBD] Reverse Voltage VR Forward Voltage VF IR=2mA IF=2A Reverse Current Interterminal Capacitance IR C VR=15V VR=10V, f=1MHz 75 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 20 ns Package Dimensions 0.25 8 7 6 5 1 2 3 4 0.15 6 5 2.3 2 3 4 0.65 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view 2.9 0.75 1 0.07 0.25 2.8 0.3 7 V Electrical Connection unit : mm 7012-004 8 30 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 No.8287-2/6 VEC2811 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --15V 100mA ID= --1.5A RL=10Ω 50Ω VOUT D 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --10V --5V G trr VEC2811 P.G 50Ω S ID -- VDS --5 --4 . --5. 0 --1.5 --1.0 --3 --2 --25° C VGS= --2.5V --1 25 --0.5 °C --2.0 Drain Current, ID -- A --2.5 Ta= 75° C V --4 --6. 0 --3.0 [MOSFET] VDS= --10V --10 --8.0V V Drain Current, ID -- A --3.5 ID -- VGS [MOSFET] 0V V --4.0 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 Drain-to-Source Voltage, VDS -- V IT07767 [MOSFET] RDS(on) -- VGS 220 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V IT07768 [MOSFET] RDS(on) -- Ta 220 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 200 180 160 ID= --1.5A 140 --0.7A 120 100 80 60 40 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 --12 IT07769 200 180 160 --4V S= VG 7A, --0. = ID 140 120 100 V --10 S= , VG 1.5A I D= -- 80 60 40 20 --75 --50 --25 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT09169 No.8287-3/6 VEC2811 yfs -- ID Ta= 2 °C --25 75° C 25° C 1.0 5 2 5 3 7 2 --1.0 5 3 --0.1 7 5 3 2 7 --0.001 --0.3 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT07772 Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] 1000 VDD= --15V VGS= --10V 100 --0.4 IT07771 SW Time -- ID 2 f=1MHz 7 td(off) 7 Ciss, Coss, Crss -- pF 5 tf 3 2 td(on) 10 tr 7 Ciss 5 5 3 2 Coss 100 Crss 7 5 3 2 3 2 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 [MOSFET] 3 2 VDS= --10V ID= --3A --9 --10 7 5 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 3 2 --1 3 2 2 4 6 8 10 12 Total Gate Charge, Qg -- nC 14 PD -- Ta IT07775 1.0 0.9 --15 --20 --25 --30 ≤10µs IDP= --12A 1m s ID= --3A 10 m 10 DC s 0m s op er 3 2 --0.1 7 5 0 --10 Drain-to-Source Voltage, VDS -- V IT07774 ASO [MOSFET] --1.0 7 5 --2 0 --5 IT07773 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V --1.0 7 5 3 2 --0.01 7 5 3 2 7 Drain Current, ID -- A Allowable Power Dissipation, PD -- W [MOSFET] VGS=0V Ta= 75° C 25° C --25 °C 5 3 --0.1 Switching Time, SW Time -- ns --10 7 5 3 2 7 3 IS -- VSD [MOSFET] VDS= --10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 10 ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09302 [MOSFET] M ou nt 0.8 ed on ac er 0.6 am ic bo ar d (9 00 m 0.4 m2 ✕ 0. 8m m )1 0.2 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09303 No.8287-4/6 VEC2811 IF -- VF 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 7 5 3 2 0.0001 0.1 7 5 --25 °C 1.0 7 5 3 2 3 2 0.01 0 0.10 0.05 0.15 0.20 0.25 0.30 0.35 0.40 0.45 (1) 1.0 Sine wave 0.6 180° 360° 0.4 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 0.5 1.0 25°C --25°C 5 0 15 10 1.5 20 25 30 Reverse Voltage, VR -- V 35 IT08569 C -- VR 5 (2) (4) (3) 360° 0.8 75°C 50°C 7 θ 3 2 100 7 5 3 2.0 2.5 Average Output Current, IO -- A IT08571 IFSM -- t [SBD] 7 Surge Forward Current, IFSM(Peak) -- A 0.50 PF(AV) -- IO Rectangular wave 100°C IT08568 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V 1.2 IR -- VR °C Ta=125 Reverse Current, IR -- mA 3 2 Ta =1 25 10 °C 0° C 75 °C 50 °C 25° C Forward Current, IF -- A 10 7 5 2 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT08572 Current waveform : 50Hz sine wave 6 IS 20ms t 5 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT03090 No.8287-5/6 VEC2811 Note on usage : Since the VEC2811 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2005. Specifications and information herein are subject to change without notice. PS No.8287-6/6