CPH5811 Ordering number : ENN8234 CPH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with an N-Channel Sillicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V driver [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 20 ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V ±10 V 3 A PW≤10µs, duty cycle≤1% 12 A Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 1 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 10 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QM Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TB-00001212 No.8234-1/6 CPH5811 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 VDS=20V, VGS=0 20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=1.5A 3.36 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage V 1 µA ±10 µA 1.3 5.6 V S ID=1.5A, VGS=4V ID=1A, VGS=2.5V 48 63 mΩ 58 82 mΩ 72 100 mΩ Input Capacitance Ciss ID=0.5A, VGS=1.8V VDS=10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 280 pF VDS=10V, f=1MHz 60 pF Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 35 ns tf See specified Test Circuit. 25 ns Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 Diode Forward Voltage VSD IS=3A, VGS=0 0.82 1.2 VR VF 1 IR=1mA IF=0.5A 0.30 0.35 VF 2 IF=1A VR=6V 0.35 0.40 V 500 µA Turn-OFF Delay Time Fall Time nC V [SBD] Reverse Voltage Forward Voltage Reverse Current IR C Interterminal Capacitance Reverse Recovery Time trr Rth(j-a) Therminal Resistance Package Dimensions unit : mm 2171A 42 IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2✕0.8mm) 5 4 3 0.2 2.8 1.6 2 0.7 0.9 0.2 2.9 ns °C / W 110 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.05 1 0.95 V pF 15 3 0.6 1 V Electrical Connection 0.6 4 VR=10V, f=1MHz cycle 0.15 0.4 5 15 2 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No.8234-2/6 CPH5811 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty≤10% 100mA ID=1.5A RL=6.67Ω D 50Ω VOUT 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 4V 0V --5V G trr CPH5811 50Ω ID -- VDS 4.0 [MOSFET] V VDS=10V 3.5 2.0 1.5 1.0 25 0.5 0.5 0 °C --25°C 1.0 2.5 5°C VGS=1.0V 1.5 3.0 Ta= 7 2.0 ID -- VGS [MOSFET] 1.5 2.5 1.8V 10.0V 4.0V 2.5 V 3.0 Drain Current, ID -- A S Drain Current, ID -- A P.G 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 Drain-to-Source Voltage, VDS -- V IT03490 [MOSFET] RDS(on) -- VGS 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IT03491 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 140 120 100 1.0A 1.5A 80 ID=0.5A 60 40 20 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT03492 120 100 1.8V S= VG , 0.5A 2.5V I D= S= A, VG 0 . 1 I D= =4.0V , V GS A .5 1 I D= 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03493 No.8234-3/6 CPH5811 yfs -- ID [MOSFET] 2 C 25° 5 C 5° 3 2 = Ta C 75° --2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 0.01 0.2 2 3 5 7 0.1 2 3 5 7 1.0 2 SW Time -- ID 3 5 7 10 IT03494 [MOSFET] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD -- V IT03495 Ciss, Coss, Crss -- VDS [MOSFET] 1000 VDD=10V VGS=4V 2 f=1MHz 7 5 100 7 tr td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VGS=0 Ta= 75° C 25° C --25 °C 7 3 tf 3 2 td(on) 10 7 5 Ciss 3 2 100 7 Coss 5 Crss 3 3 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 7 VGS -- Qg 4.0 0 10 IT03496 Drain Current, ID -- A 3.5 3 2 10 7 5 3.0 2.5 2.0 1.5 1.0 3 2 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC IT03498 PD -- Ta 1.0 0.9 10 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT03497 ASO [MOSFET] IDP=12A <10µs 10 0µ s 1m s 10 ms ID=3A DC 1.0 7 5 10 0m op s era tio n 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0.5 0 2 [MOSFET] VDS=10V ID=3A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V [MOSFET] 3 10 Drain Current, ID -- A Allowable Power Dissipation, PD -- W IF -- VSD 10 7 5 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 3 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT09177 [MOSFET] M ou 0.8 nt ed on ac er 0.6 am ic bo ar d (6 00 0.4 m m2 ✕ 0. 8m m 0.2 )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09178 No.8234-4/6 CPH5811 IF -- VF 3 [SBD] 2 Reverse Current, IR -- mA °C 25 =1 Ta 7 5 °C 25 C 3 2 50 °C 10 0° 0.1 7 75 °C Forward Current, IF -- A 1.0 5 3 2 0.01 0.1 0.2 0.3 0.4 Ta=125°C 100°C 10 7 5 3 2 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.5 Forward Voltage, VF -- V PF(AV) -- IO 0.8 0.6 (3) (2) (4) Rectangular wave 0.4 θ 0.3 360° Sine wave 0.2 0.1 180° 360° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Average Forward Current, IO -- A IT00624 IFSM -- t [SBD] 12 10 15 IT00623 C -- VR 1000 [SBD] f=1MHz 7 5 (1) 0.5 5 Reverse Voltage, VR -- V [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.7 0 IT00622 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W [SBD] 0.01 0 Surge Forward Current, IFSM(Peak) -- A IR -- VR 100 7 5 3 2 3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 Reverse Voltage, VR -- V 10 2 IT00625 Current waveform 50Hz sine wave Is 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT00626 No.8234-5/6 CPH5811 Note on usage : Since the CPH5811 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8234-6/6