VEC2818 Ordering number : ENA0577 SANYO Semiconductors DATA SHEET VEC2818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS ±10 V ID --3.5 A IDP PD --20 V PW≤10µs, duty cycle≤1% --14 A Mounted on a ceramic board (1200mm2✕0.8mm) 1unit 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO IFSM 50Hz sine wave, 1 cycle 30 V 30 V 2 A 5 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : CQ Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11707PE TI IM TC-00000470 No. A0577-1/6 VEC2818 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--2A Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage --20 --0.4 3.5 ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V Input Capacitance Ciss Output Capacitance Coss ID=--0.3A, VGS=--1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time V --1 µA ±10 µA --1.4 5.8 V S 55 72 mΩ 77 108 mΩ 112 168 mΩ 680 pF 115 pF VDS=--10V, f=1MHz 80 pF td(on) See specified Test Circuit. 12 ns tr td(off) See specified Test Circuit. 57 ns See specified Test Circuit. 68 ns tf Qg See specified Test Circuit. 58 ns VDS=--10V, VGS=--4.5V, ID=--3.5A 8.7 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--4.5V, ID=--3.5A VDS=--10V, VGS=--4.5V, ID=--3.5A 1.5 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--3.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge 1.8 nC --0.83 --1.2 V 0.4 0.45 V 1.25 mA [SBD] Reverse Voltage VR Forward Voltage VF IR=2mA IF=2A Reverse Current Interterminal Capacitance IR C VR=15V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions 0.25 0.3 7 6 2 3 ns 5 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode 0.15 6 5 4 1 0.65 2 3 4 Top view 0.75 2.9 0.07 1 pF 20 2.3 0.25 2.8 75 8 7 V Electrical Connection unit : mm (typ) 7012-005 8 30 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 No. A0577-2/6 VEC2818 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --10V 100mA ID= --2A RL=5Ω 50Ω VOUT D 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --4.5V --5V G trr VEC2818 50Ω ID -- VDS --6 --2.0 --1.5 VGS= --1.5V --4 --3 --2 Ta = --1.0 --5 0 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT11952 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 160 25 °C --1 --0.5 --25 °C --4.5 V --2.5 [MOSFET] VDS= --10V °C --3.0 ID -- VGS --7 V --1.8 --4.0 V --3.5 [MOSFET] V --2.0 75 --3. 5 V --3. 0 --2 V .5V --4.0 Drain Current, ID -- A S Drain Current, ID -- A P.G --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT06417 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc [MOSFET] 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 140 120 100 ID= --0.3A 80 --2.0A 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT11856 140 .8V 120 I D= = --1 , VGS A 3 . --0 100 , 1.0A -I D= 80 2.5V = -S VG = --4 VGS .0A, .5V --2 I D= 60 40 20 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 IT11857 No. A0577-3/6 VEC2818 2 10 7 °C --25 Ta= 5 C 75° 3 C 25° 2 2 5 3 7 2 --1.0 5 3 7 --10 IT06420 Drain Current, ID -- A SW Time -- ID 5 [MOSFET] --0.1 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT06421 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] 2 f=1MHz 1000 td(off) 100 7 tf 5 tr 3 2 td(on) Ciss 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --1.0 7 5 3 2 --0.001 --0.2 2 5 3 2 Coss 100 Crss 7 10 5 7 5 --0.1 3 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 3 2 --10 7 5 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC IT11953 PD -- Ta 1.2 1.0 --6 --8 --10 --12 --14 --16 IDP= --14A --18 --20 PW≤10µs 10 0µ s 10m 1ms s ID= --3.5A 3 2 DC --1.0 7 5 10 0m op era 3 2 s tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) --0.1 7 5 3 2 --0.5 --4 Drain-to-Source Voltage, VDS -- V IT06423 ASO [MOSFET] [MOSFET] VDS= --10V ID= --3.5A --4.0 --2 IT06422 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V VGS=0V VDD= --10V VGS= --4.5V 3 Allowable Power Dissipation, PD -- W [MOSFET] --0.01 7 5 3 2 1.0 7 --0.1 IS -- VSD --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS= --10V Ta= 75° C 25° C --25 °C yfs -- ID 3 Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT11858 [MOSFET] M ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 12 00 m 0.4 m2 ✕ 0.8 m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11859 No. A0577-4/6 VEC2818 IF -- VF [SBD] 50 °C 25° C 12 5 10 °C 0° C 75 °C 0.1 7 5 --25 °C 1.0 7 5 3 2 3 2 0.01 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V PF(AV) -- IO 1.2 Rectangular wave (1) 1.0 180° 360° 0.4 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 0.5 1.0 100°C 1.5 50°C 25°C --25°C 10 5 15 20 25 30 Reverse Voltage, VR -- V C -- VR 7 35 IT08569 [SBD] 5 (2) (4) (3) Sine wave 0.6 [SBD] 75°C 0 [SBD] 360° 3 2 100 7 5 3 2.0 2.5 Average Output Current, IO -- A IT08571 IFSM -- t [SBD] 7 Surge Forward Current, IFSM(Peak) -- A 0.50 θ 0.8 °C Ta=125 IT08568 Interterminal Capacitance, C -- pF 0 IR -- VR 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 7 5 3 2 0.0001 Reverse Current, IR -- mA 3 2 Ta = Forward Current, IF -- A 10 7 5 2 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT08572 Current waveform : 50Hz sine wave 6 IS 20ms t 5 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT03090 No. A0577-5/6 VEC2818 Note on usage : Since the VEC2818 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0577-6/6