CPH5857 Ordering number : ENA0547 SANYO Semiconductors DATA SHEET CPH5857 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • Junction temperature 150°C guarantee. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS ±10 V ID --1.5 A IDP PD --20 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V --6.0 A 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO IFSM 50Hz sine wave, 1 cycle 15 V 15 V 1 A 3 A Junction Temperature Tj --55 to +150 °C Storage Temperature Tstg --55 to +150 °C Marking : YK Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2006PE TI IM TC-00000405 No. A0547-1/6 CPH5857 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA yfs RDS(on)1 VDS=--10V, ID=--800mA Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 --20 V --0.4 1.3 --1 µA ±10 µA --1.3 V 235 mΩ 2.3 S ID=--800mA, VGS=--4V ID=--400mA, VGS=--2.5V 180 240 340 mΩ 350 600 mΩ Input Capacitance Ciss ID=--70mA, VGS=--1.8V VDS=--10V, f=1MHz 290 pF Output Capacitance Coss VDS=--10V, f=1MHz 40 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 32 ns tf Qg See specified Test Circuit. 27 ns VDS=--10V, VGS=--4V, ID=--1.5A 3.2 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--4V, ID=--1.5A VDS=--10V, VGS=--4V, ID=--1.5A 0.8 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--1.5A, VGS=0V VR VF 1 IR=0.2mA IF=0.5A VF 2 IF=1A VR=7.5V Turn-OFF Delay Time Fall Time Total Gate Charge 0.6 nC --0.87 --1.2 V 0.44 0.49 V 0.51 0.56 V 3 µA [SBD] Reverse Voltage Forward Voltage Reverse Current 15 Interterminal Capacitance IR C VR=10V, f=1MHz, 1 cycle Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions V 20 pF 10 ns Electrical Connection unit : mm (typ) 7017A-005 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.15 2.9 5 4 3 0.05 1.6 2.8 0.2 0.6 5 0.9 0.2 0.6 1 1 2 0.95 0.4 2 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No. A0547-2/6 CPH5857 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --10V Duty≤10% D 50Ω 100Ω 10Ω VOUT PW=10µs D.C.≤1% 10mA 100mA ID= --800mA RL=12.5Ω VIN 100mA VIN 0V --4V 10µs --5V G trr CPH5857 50Ω ID -- VDS --1.8 --1.6 VGS= --1.5V --1.0 --0.8 --0.6 --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 IT02731 Drain-to-Source Voltage, VDS -- V [MOSFET] RDS(on) -- VGS 600 500 400 --0.8A 300 ID= --0.4A 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT02733 --0.5 --1.0 --1.5 --2.0 --2.5 IT02732 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta 500 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.2 5°C °C 25° C --1.2 --1.4 Ta= 7 --1.4 [MOSFET] VDS= --10V --25 --6.0 --1.6 --2.0 --2 .0 V --4.0 V --1.8 ID -- VGS [MOSFET] --3 --2 .0V .5V V --2.0 Drain Current, ID -- A S Drain Current, ID -- A P.G 400 V --2.5 S= VG , A --0.4 V I D= = --4.0 , V GS A .8 0 I D= -- 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02734 No. A0547-3/6 CPH5857 7 5 3 C 25° 2 5°C = Ta 1.0 --2 C 75° 7 5 3 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 2 --0.1 7 5 0 --0.2 SW Time -- ID --0.4 --0.6 --0.8 --1.2 [MOSFET] Ciss, Coss, Crss -- VDS 1000 --1.4 IT02736 [MOSFET] f=1MHz 7 5 td(off) 5 3 tf 2 tr td(on) Ciss 3 2 100 7 5 Coss 7 3 Crss 5 2 10 3 10 3 5 7 2 --0.1 3 5 7 --1.0 2 3 Drain Current, ID -- A 0 5 IT02737 VGS -- Qg --4 [MOSFET] --10 7 5 Drain Current, ID -- A --2 --1 --1.0 7 5 3 2 --0.1 7 5 3 2 0 1 2 3 Total Gate Charge, Qg -- nC 3.5 IT02739 PD -- Ta 1.2 --15 --10 --20 s 3 2 --3 --5 IT02738 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO IDP= --6.0A ≤10µs 10 0µ s ID= --1.5A 1 0m 10 DC 0m s op s er ati on (T a= 25 °C ) Operation in this area is limited by RDS(on). 1m VDS= --10V ID= --1.5A 0 --1.0 Diode Forward Voltage, VSD -- V IT02735 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --1.0 7 5 5 VDD= --10V VGS= --4V 7 Gate-to-Source Voltage, VGS -- V 3 2 --0.01 2 Drain Current, ID -- A 100 [MOSFET] VGS=0V 3 2 2 0.1 --0.01 Allowable Power Dissipation, PD -- W IS -- VSD --10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS= --10V Ta=7 5°C 25°C --25°C yfs -- ID 10 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT11563 [MOSFET] 1.0 M 0.9 ou nte 0.8 do na ce ram 0.6 ic bo ard (9 0.4 00 mm 2 ✕0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11564 No. A0547-4/6 CPH5857 IF -- VF Reverse Current, IR -- µA 3 2 0.1 7 5 3 2 50° C 125 °C 100 °C 75°C 50° C 25° C 0°C --25° C 0.01 7 5 100 75°C 10 50°C 1.0 25°C 0.1 0°C 0.01 --25°C 0.001 0.0001 0.001 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage, VF -- V Rectangular wave (1) (2) (4) (3) 1.0E--0.5 θ 360° 8.0E--0.6 Sine wave 0.4 360° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0 0 0.4 0.2 0.6 0.8 80 (4) Rectangular wave 60 θ 40 360° Sine wave 20 (3) (2) (1) (1) (2) θ 360° (3) Sine wave VR 180° (4) 360° 0 2 4 6 8 10 12 14 16 IT11207 C -- VR 5 *When mounted in reliability operaion board, Rth(J-a)=183.67°C/W 100 16 IT11205 Peak Reverse Voltage, VRM -- V Interterminal Capacitance, C -- pF 120 14 VR IT11206 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 140 12 0.0E+00 1.2 Tc -- IO 160 10 2.0E--0.6 1.0 Average Output Current, IO -- A 8 PR(AV) -- VRM 4.0E--0.6 0.2 0.1 6 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave 6.0E--0.6 180° 0.3 4 Reverse Voltage, VR -- V 1.2E--0.5 0.6 0.5 2 IT11204 PF(AV) -- IO 0.7 0 0.7 Average Reverse Power Dissipation, PR(AV) -- W 0 Average Forward Power Dissipation, PF(AV) -- W Ta=150°C 125°C 100°C 1000 1.0 7 5 3 2 Case Temperature, Tc -- °C IR -- VR 10000 Ta= 1 Forward Current, IF -- A 3 2 3 2 100 7 5 3 2 180° 360° 0.4 0 0 0.2 0.6 0.8 1.0 Average Output Current, IO -- A Surge Forward Current, IFSM(Peak) -- A IT11208 IFSM -- t 3.5 1.2 10 0.1 2 3 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 3 IT10275 [SBD] Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 No. A0547-5/6 CPH5857 Note on usage : Since the CPH5857 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0547-6/6