CPH5847 Ordering number : EN8689 CPH5847 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ±10 V ID 1.5 A IDP PD Allowable Power Dissipation 20 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V 6 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 35 V Average Output Current IO 1 A Surge Forward Current IFSM 3 A [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : XZ Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82505PE MS IM TB-00001763 No.8689-1/6 CPH5847 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1A 1.7 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 V 1 µA ±10 µA 1.3 V 2.8 S ID=1A, VGS=4V ID=0.5A, VGS=2.5V 160 210 mΩ 200 280 mΩ 280 390 mΩ Input Capacitance Ciss ID=0.1A, VGS=1.8V VDS=10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 100 pF VDS=10V, f=1MHz 22 pF Crss VDS=10V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6.5 ns Rise Time tr td(off) See specified Test Circuit. 28 ns See specified Test Circuit. 19 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 13 ns VDS=10V, VGS=10V, ID=1.5A 4.5 nC 0.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A Diode Forward Voltage VSD IS=1.5A, VGS=0V VR VF 1 IR=500µA IF=500mA VF 2 Interterminal Capacitance IR C IF=1A VR=15V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 0.4 nC 0.83 1.2 V 0.32 0.37 V 0.38 0.43 V 360 µA [SBD] Reverse Voltage Forward Voltage Reverse Current Package Dimensions unit : mm 7017-005 5 4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.2 2.8 ns 3 3 1.6 pF 10 Electrical Connection 0.6 4 V 27 0.15 0.4 5 30 0.05 2 Top view 0.6 1 1 2 0.95 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.7 0.9 0.2 2.9 SANYO : CPH5 No.8689-2/6 CPH5847 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty≤10% 100mA ID=1A RL=10Ω VOUT D 50Ω 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 4V 0V --5V G trr CPH5847 50Ω S 1.0 0.6 VGS=1.0V 25 0.2 0 °C 0.8 0.4 0.4 75 °C 1.2 --25 V 1.4 °C V 1.5 °C Ta= 1.6 Drain Current, ID -- A 4.0V --25 °C V 2.5 3.0V 1.8 1 6.0V [MOSFET] VDS=10V 10.0 Drain Current, ID -- A 0.8 ID -- VGS 2.0 V .8 1.6 1.2 [MOSFET] 25 ID -- VDS 2.0 Ta= 75° C P.G 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 Drain-to-Source Voltage, VDS -- V IT02901 RDS(on) -- VGS [MOSFET] 400 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Gate-to-Source Voltage, VGS -- V IT02902 RDS(on) -- Ta [MOSFET] 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 1.0A 250 ID=0.5A 200 150 100 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT02903 350 300 250 V =2.5 , VGS A 5 . I D=0 =4.0V , VGS A 0 . 1 I D= 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02904 No.8689-3/6 C 25° 1.0 7 5 C 5° = Ta 3 2 --2 °C 75 0.1 7 5 3 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.1 7 5 1000 0.4 0.5 0.6 td(off) 2 tf 10 7 td(on) 5 3 0.9 1.0 1.1 1.2 f=1MHz 3 2 Ciss 100 7 5 3 Coss 2 2 Crss 10 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 0 [MOSFET] 10 7 5 VDS=10V ID=1.5A Drain Current, ID -- A 3 2 0 1 2 3 4 5 Total Gate Charge, Qg -- nC IT07692 PD -- Ta 1.0 14 16 18 20 <10µs IDP=6A 10 ID=1.5A m s 1.0 7 5 D C op er 3 2 0.1 7 5 3 2 1 12 s 4 10 s 5 8 0m 6 6 10 7 4 Drain-to-Source Voltage, VDS -- V IT02908 ASO [MOSFET] 1m 3 2 8 0 2 IT02907 VGS -- Qg 10 9 0.8 5 3 1.0 0.1 0.7 7 Ciss, Coss, Crss -- pF 5 0.3 IT02906 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] tr Switching Time, SW Time -- ns 3 2 0.01 0.2 5 VDD=10V VGS=4V 7 Gate-to-Source Voltage, VGS -- V 1.0 7 5 IT02905 SW Time -- ID 100 Allowable Power Dissipation, PD -- W 3 2 3 2 0.01 0.001 [MOSFET] VGS=0V °C C --25 °C 3 2 IS -- VSD 10 7 5 25° [MOSFET] VDS=10V Ta= 75 yfs -- ID 10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S CPH5847 at io n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09925 [MOSFET] M 0.8 ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09926 No.8689-4/6 CPH5847 IF -- VF 3 2 Reverse Current, IR -- µA 7 5 3 2 0.1 7 5 Ta=1 25°C 100 °C 75° C 50°C 25°C 0°C --25° C Forward Current, IF -- A 1.0 3 2 0.01 0.1 0 0.2 0.3 0.4 0.5 0.6 Rectangular wave 0.5 (1) 180° 360° 0.2 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0 0 0.2 0.4 0.6 0.8 Surge Forward Current, IFSM(Peak) -- A --25°C 10 5 15 20 25 30 35 IT09558 C -- VR 100 7 5 3 2 10 1.0 Average Output Current, IO -- A 1.2 IT09559 IFSM -- t 14 0°C 2 Sine wave 0.1 25°C Reverse Voltage, VR -- V (2) (4) (3) 360° 0.3 50°C 3 θ 0.4 75°C 0 PF(AV) -- IO 0.6 Ta=125°C 100°C IT09557 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V IR -- VR 100k 5 2 10k 5 2 1k 5 2 100 5 2 10 5 2 1.0 5 2 0.1 5 2 0.01 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT09556 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No.8689-5/6 CPH5847 Note on usage : Since the CPH5847 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2005. Specifications and information herein are subject to change without notice. PS No.8689-6/6