FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting. The FW507 incorporates two chips being equivalent to the MCH3312 and the SB1003M in one package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --30 ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (3000mm2✕0.8mm) ≤10s 1unit V ±20 V --3 A --12 A 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO IFSM 50Hz sine wave, 1 cycle 30 V 35 V 1 A 5 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : W507 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81205PA MS IM TB-00001717 No.8403-1/6 FW507 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V yfs RDS(on)1 VDS=--10V, ID=--3A Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance RDS(on)2 Ciss --30 VDS=--10V, ID=--1mA V --1.2 --1 µA ±10 µA --2.6 1.9 3.3 ID=--3A, VGS=--10V ID=--1.5A, VGS=--4V V S 115 150 mΩ 210 295 mΩ pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 200 Output Capacitance 47 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 32 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.2 ns Rise Time tr td(off) See specified Test Circuit. 6.8 ns See specified Test Circuit. 18 ns tf See specified Test Circuit. 8.0 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 5.5 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 0.98 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 0.82 Diode Forward Voltage VSD IS=--3A, VGS=0V nC --0.91 --1.2 V 0.47 0.55 V 15 µA [SBD] Reverse Voltage VR Forward Voltage VF Reverse Current Interterminal Capacitance IR C Reverse Recovery Time trr IR=200µA IF=1A VR=15V V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Package Dimensions unit : mm 7005-012 27 8 7 6 5 1 2 3 4 0.2 1 : Anode 2 : Anode 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode 1 : Anode 2 : Anode 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view 0.1 1.27 1.5 1.8 MAX 0.43 0.595 6.0 4.4 4 5.0 ns Electrical Connection 5 1 pF 10 0.3 8 30 SANYO : SOP8 No.8403-2/6 FW507 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --15V Duty≤10% D 50Ω VOUT 100Ω 10Ω 10µs PW=10µs D.C.≤1% 10mA ID= --3A RL=5Ω VIN 100mA 100mA VIN 0V --10V --5V trr G FW507 P.G 50Ω S ID -- VDS --5.0 [MOSFET] VDS= --10V --4. --4.5 --4.0 --0.8 --0.4 --3.0 --2.5 --2.0 --1.5 5°C °C --25° C VGS= --3.0V --3.5 Ta= 7 5V . --3 --1.2 Drain Current, ID -- A --1.6 Drain Current, ID -- A ID -- VGS [MOSFET] 0V V --6.0 --10. 0 V --2.0 --1.0 25 --0.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 Drain-to-Source Voltage, VDS -- V IT03223 [MOSFET] RDS(on) -- VGS 400 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 Gate-to-Source Voltage, VGS -- V IT03224 [MOSFET] RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 250 --1.0A 200 ID= --0.5A 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V --18 --20 IT03225 350 300 V --4 S= , VG 0.5A 250 -I D= 200 V S= 1.0A, G I D= -- 150 --10V 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03226 No.8403-3/6 FW507 25 1.0 = Ta 7 5 --2 °C °C 75 °C 5 3 3 2 --1.0 7 5 3 2 --0.1 7 5 °C 3 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A SW Time -- ID 2 --0.01 --0.2 5 7 --10 IT03227 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT03228 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] 3 f=1MHz VDD= --15V VGS= --10V 100 [MOSFET] VGS=0V Ta=7 5 5 0.1 --0.01 Ciss 2 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 7 2 IS -- VSD [MOSFET] VDS= --10V 25°C --25°C yfs -- ID 10 5 3 td(off) 2 10 tf td(on) 7 5 100 7 5 Coss tr 3 Crss 3 2 2 1.0 --0.1 10 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 5 VGS -- Qg --10 3 2 --10 7 5 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V [MOSFET] VDS= --10V ID= --2A --9 --7 --6 --5 --4 --3 3 2 --1 3 2 1 2 3 4 5 6 Total Gate Charge, Qg -- nC PD -- Ta 2.2 2.0 IT03231 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V IT03230 ASO [MOSFET] IDP= --12A <10µs 10 0µ s 10 ID= --3A 0m 1m s s 10 m 10 s( Ta = 25 3 2 --0.1 7 5 0 --5 --1.0 7 5 --2 0 Allowable Power Dissipation, PD -- W 0 IT03229 s °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (3000mm2✕0.8mm) ≤10s 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09728 [MOSFET] M ou nte 1.8 do na 1.6 ce ram 1.4 ic bo ard 1.2 (3 00 1.0 0m m2 ✕0 0.8 .8m m) 0.6 ≤1 0s 0.4 1u nit 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09729 No.8403-4/6 FW507 IF -- VF 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 C 25° --25 °C 0 °C 0.001 0.3 0.4 0.5 0.6 IT07934 PF(AV) -- IO [SBD] 0.7 75°C 50°C 25°C --25°C 0 20 10 (1) 360° 0.5 Sine wave 0.4 180° 360° 0.3 0.2 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.1 0 0.2 0 0.4 0.6 0.8 1.0 100 80 60 40 (1) (2) (4) (3) 20 0 1.2 IT08184 C -- VR 3 [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 120 θ 40 IT07935 Tc -- IO 140 (2) (4) (3) 0.6 30 Reverse Voltage, VR -- V Rectangular wave Average Output Current, IO -- A Interterminal Capacitance, C -- pF 0.7 Forward Voltage, VF -- V Case Temperature, Tc -- °C Average Forward Power Dissipation, PF(AV) -- W 0.2 0.1 0 [SBD] Ta=125°C 100°C Reverse Current, IR -- µA 50 °C 10 0.01 7 5 3 2 75 0.1 7 5 3 2 IR -- VR [SBD] °C 1.0 7 5 3 2 Ta= 125 °C Forward Current, IF -- A 10 7 5 3 2 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A 1.0 1.2 IT08185 [SBD] f=1MHz 2 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 7 100 IT07938 No.8403-5/6 FW507 Note on usage : Since the FW507 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2005. Specifications and information herein are subject to change without notice. PS No.8403-6/6