SANYO CPH5863

CPH5863
Ordering number : ENA0465
SANYO Semiconductors
DATA SHEET
CPH5863
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
•
•
•
•
DC / DC converter applications.
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
• 2.5V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
• Low reverse current.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
±12
V
ID
2.5
A
IDP
PD
30
V
PW≤10µs, duty cycle≤1%
10
A
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : YR
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PE TI IM TC-00000875 No. A0465-1/5
CPH5863
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
Nonrepetitive Peak Reverse Surge Voltage
VRSM
IO
35
V
700
mA
Average Output Current
Surge Forward Current
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
V
5
A
--55 to +125
°C
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
yfs
RDS(on)1
VDS=10V, ID=1.3A
1.9
Cutoff Voltage
Forward Transfer Admittance
30
V
1
µA
±10
µA
1.3
V
3.2
S
95
125
mΩ
RDS(on)2
Ciss
ID=1.3A, VGS=4V
ID=0.7A, VGS=2.5V
120
170
mΩ
VDS=10V, f=1MHz
270
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
35
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
td(off)
See specified Test Circuit.
40
ns
See specified Test Circuit.
39
ns
tf
Qg
See specified Test Circuit.
38
ns
VDS=10V, VGS=4V, ID=2.5A
3.7
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4V, ID=2.5A
VDS=10V, VGS=4V, ID=2.5A
0.65
Gate-to-Drain “Miller” Charge
1
nC
Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
Static Drain-to-Source On-State Resistance
Input Capacitance
Turn-OFF Delay Time
Fall Time
Total Gate Charge
0.9
1.2
V
0.55
V
80
µA
[SBD]
Reverse Voltage
VR
Forward Voltage
VF
IR=300µA
IF=700mA
Reverse Current
Interterminal Capacitance
IR
C
VR=15V
VR=10V, f=1MHz, 1 cycle
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
Package Dimensions
25
5
4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
3
1.6
2.8
0.05
0.9
0.2
0.6
1
1
2
0.95
0.4
ns
3
0.2
4
pF
10
0.15
2.9
5
V
Electrical Connection
unit : mm (typ)
7017A-005
0.6
30
2
Top view
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
No. A0465-2/5
CPH5863
Switching Time Test Circuit
[MOSFET]
trr Test Circuit
[SBD]
VDD=10V
VIN
4V
0V
Duty≤10%
PW=10µs
D.C.≤1%
G
100Ω
10Ω
100mA
50Ω
10mA
D
100mA
ID=1.3A
RL=11.5Ω
VOUT
VIN
10µs
--5V
50Ω
CPH5863
S
ID -- VDS
[MOSFET]
2.5
[MOSFET]
VDS=10V
V
Ta=
2.5
1.5V
1.0
0.5
1.5
5°C
1.5
2.0
1.0
VGS=1.0V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
0
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Gate-to-Source Voltage, VGS -- V
IT06405
[MOSFET]
RDS(on) -- Ta
IT06404
RDS(on) -- VGS
250
25
°C
0.5
--25
°C
2.0
Ta=
7
Drain Current, ID -- A
2.0
4.0V
Drain Current, ID -- A
ID -- VGS
3.0
2.5V
3.0V
3.0
trr
--25
°C
75 °
C
P.G
250
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
200
1.3A
150
ID=0.7A
100
50
4
6
8
10
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
°C
25
2
C
5°
--2
°C
=
75
Ta
1.0
7
5
3
--20
0
20
40
60
80
100
120
IS -- VSD
140
160
IT06407
[MOSFET]
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
0.1
0.01
--40
10
7
5
5
3
50
Ambient Temperature, Ta -- °C
VDS=10V
7
100
IT06406
yfs -- ID
10
A
=0.7
V, I D
5
.
2
=
1.3A
VGS
,I =
4.0V D
=
VGS
5°C
25°
C
--25
°C
2
150
0
--60
0
0
200
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT06408
0.01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V
1.1
1.2
IT06409
No. A0465-3/5
CPH5863
SW Time -- ID
[MOSFET]
Ciss, Coss, Crss -- VDS
1000
VDD=15V
VGS=4V
[MOSFET]
f=1MHz
7
5
3
2
100
7
5
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
1000
7
5
td(off)
tf
3
2
td(on)
10
7
5
tr
Ciss
3
2
100
7
5
Coss
3
3
Crss
2
2
1.0
0.01
10
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
VGS -- Qg
0
10
7
5
3.0
2.5
2.0
1.5
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Total Gate Charge, Qg -- nC
0.9
M
ou
nt
ed
0.8
0.6
on
ac
er
am
ic
bo
ar
d
0.4
0.2
25
30
PW≤10µs
1m
s
10
m
10
s
0m
DC
s
op
er
ati
on
ID=2.5A
3
2
Operation in this
area is limited by RDS(on).
0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
2 3
IT06412
PD -- Ta
1.0
20
IDP=10A
0.01
0.01
4.0
15
1.0
7
5
3
2
0.5
0
Allowable Power Dissipation, PD -- W
3
2
10
Drain-to-Source Voltage, VDS -- V
IT06411
[MOSFET]
ASO
2
VDS=10V
ID=2.5A
3.5
5
[MOSFET]
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.0
5 7 10
IT06410
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
Drain-to-Source Voltage, VDS -- V
IT11356
IR -- VR
[SBD]
[MOSFET]
(1
00
0m
m2
✕
0.
8m
m
)1
un
it
0
0
20
60
40
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT11357
IF -- VF
[SBD]
5
5
2
3
5°C
Ta=12
Reverse Current, IR -- µA
1000
1.0
7
5
3
0.1
7
5
25°C
25°
C
2
Ta=
1
Forward Current, IF -- A
2
3
5
100°C
2
100
5
75°C
2
10
50°C
5
2
25°C
1.0
5
2
0.01
0
0.2
0.4
0.6
Forward Voltage, VF -- V
0.8
1.0
ID00383
2
0.1
0
5
10
15
20
25
Reverse Voltage, VR -- V
30
35
ID00384
No. A0465-4/5
PF(AV) -- IO
0.8
0.6
(4)
(3)
Rectangular
wave
0.4
[SBD]
(2)
(1)
θ
360°
0.2
Sine wave
0.2
360°
0.8
0.4
0.6
Average Output Current, IO -- A
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
6
[SBD]
100
7
5
3
2
10
7
180°
0
0
C -- VR
2
f=1MHz
(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
CPH5863
1.0
ID00385
5
1.0
2
3
5
7
10
2
3
Reverse Voltage, VR -- V
5
ID00386
[SBD]
Current waveform 50Hz sine wave
IS
5
20ms
t
4
3
2
1
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00387
Note on usage : Since the CPH5863 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0465-5/5