VEC2822 Ordering number : ENA0961 SANYO Semiconductors DATA SHEET VEC2822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Low switching noise. • Low leakage current and high reliability due to planar structure. • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS --20 V ±10 V ID --3.5 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --14 A Allowable Power Dissipation PD Mounted on a ceramic board (1200mm2✕0.8mm) 1unit 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage VRRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM 17 V Marking : CY Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0307PE TI IM TC-00000899 No. A0961-1/6 VEC2822 Continued from preceding page. Symbol Conditions Average Output Current Parameter IO Mounted on a ceramic board (1200mm2✕0.8mm) 1unit Ratings Surge Forward Current IFSM Unit 2 50Hz sine wave, 1 cycle A 10 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance VGS(off) ⏐yfs⏐ VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--2A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V Input Capacitance RDS(on)3 Ciss ID=--0.3A, VGS=--1.8V VDS=--10V, f=1MHz Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr td(off) tf Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD --20 V --0.4 3.5 --1 µA ±10 µA --1.4 V 5.8 55 S 72 77 108 mΩ 112 168 mΩ 680 VDS=--10V, f=1MHz VDS=--10V, f=1MHz mΩ pF 115 pF 80 pF See specified Test Circuit. 12 ns See specified Test Circuit. 57 ns See specified Test Circuit. 68 ns See specified Test Circuit. 58 ns VDS=--10V, VGS=--4.5V, ID=--3.5A VDS=--10V, VGS=--4.5V, ID=--3.5A 8.7 nC 1.5 nC VDS=--10V, VGS=--4.5V, ID=--3.5A IS=--3.5A, VGS=0V 1.8 nC --0.83 --1.2 V 0.5 0.56 V 30 µA [SBD] Reverse Voltage Forward Voltage VR VF IR=0.2mA IF=2A Reverse Current IR Interterminal Capacitance C Reverse Recovery Time trr VR=7.5V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Package Dimensions 0.25 0.3 27 7 6 2 3 ns 5 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode 0.15 6 5 4 0.65 1 2 3 4 Top view 0.75 2.9 0.07 1 pF 10 2.3 0.25 2.8 8 7 V Electrical Connection unit : mm (typ) 7012-005 8 15 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 No. A0961-2/6 VEC2822 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --10V 100mA ID= --2A RL=5Ω 50Ω VOUT D 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --4.5V --5V G trr VEC2822 50Ω ID -- VDS --3.0 --2.0 --1.5 [MOSFET] VDS= --10V --6 --4.5 V --2.5 ID -- VGS --7 V --1.8 --4.0 V --3.5 [MOSFET] --2.0V VGS= --1.5V --4 --3 --2 Ta = --1.0 --5 75 °C --25 °C --3. 5 V --3. 0 --2 V .5V --4.0 Drain Current, ID -- A S Drain Current, ID -- A P.G 25 °C --1 --0.5 0 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT11954 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 160 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT06417 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc [MOSFET] 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 140 120 100 ID= --0.3A --2.0A 80 60 40 20 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT11827 140 .3A = --0 , ID V 8 . = --1 VGS 120 100 = VGS 1.0 = -I D , 5V --2. A A --2.0 , I D= V 5 . = --4 VGS 80 60 40 20 --60 --40 --20 0 20 40 60 80 100 Case Temperature, Tc -- °C 120 140 160 IT11828 No. A0961-3/6 VEC2822 7 °C --25 Ta= 5 C 75° 3 C 25° 2 2 5 3 7 2 --1.0 5 3 7 --10 IT06420 Drain Current, ID -- A SW Time -- ID 5 [MOSFET] --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT06421 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] 2 f=1MHz 1000 td(off) 100 7 tf 5 tr 3 2 td(on) Ciss 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --0.1 7 5 3 2 --0.001 --0.2 2 5 3 2 Coss 100 Crss 7 10 5 7 5 --0.1 3 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 3 2 --10 7 5 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC PD -- Ta IT13025 1.2 1.0 --6 --8 --10 --12 --14 --16 IDP= --14A --18 --20 PW≤10µs 10 0µ s 10m 1ms s ID= --3.5A 3 2 DC --1.0 7 5 10 0m op era 3 2 tio n( Ta = s 25 Operation in this area is limited by RDS(on). °C ) --0.1 7 5 3 2 --0.5 --4 Drain-to-Source Voltage, VDS -- V IT06423 ASO [MOSFET] [MOSFET] VDS= --10V ID= --3.5A --4.0 --2 IT06422 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V --1.0 7 5 3 2 VDD= --10V VGS= --4.5V 3 Allowable Power Dissipation, PD -- W VGS=0V --0.01 7 5 3 2 1.0 7 --0.1 [MOSFET] --25 °C 2 10 IS -- VSD --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S [MOSFET] VDS= --10V Ta= 75° C 2 5° C ⏐yfs⏐ -- ID 3 Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT13019 [MOSFET] M ou nt 0.8 ed on ac er am ic 0.6 bo ar d( 12 00 m 0.4 m2 ✕ 0.8 m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13020 No. A0961-4/6 VEC2822 IF -- VF 10 7 5 [SBD] Reverse Current, IR -- µA 1.0 7 5 3 2 0.1 7 5 25° 100 C °C 75°C 50° C 25°C 0°C --25°C Forward Current, IF -- A 2 2 75°C 10 50°C 1.0 25°C 0.1 0°C --25°C 0.001 0.01 0.1 0.2 0.3 0.4 0.5 0.6 Forward Voltage, VF -- V [SBD] Rectangular wave 1.4 (1) (2) (4) (3) θ 1.2 360° Sine wave 1.0 0.8 180° 360° 0.6 0.4 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 0.5 1.0 1.5 2.0 2.5 Average Output Current, IO -- A *Mounted on a ceramic board (500mm2✕0.8mm), Rth(j-a)=68°C/W 80 60 (4) Rectangular wave θ 40 360° (1) (3) (2) Sine wave 20 0.025 8 10 12 14 0.020 16 IT10277 PR(AV) -- VRM [SBD] (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave (1) VR 0.015 (2) θ 360° (3) Sine wave 0.010 VR 180° (4) 360° 0.005 0 0 2 4 6 8 10 12 14 16 Peak Reverse Voltage, VRM -- V IT10433 C -- VR [SBD] 5 Interterminal Capacitance, C -- pF 100 6 Reverse Voltage, VR -- V [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 120 4 IT10432 Tc -- IO 140 2 IT10276 PF(AV) -- IO 1.6 0 0.7 Average Reverse Power Dissipation, PR(AV) -- mW 0 Average Forward Power Dissipation, PF(AV) -- W 100°C 100 0.01 Ta= 1 3 [SBD] Ta=125°C 1000 3 Case Temperature, Tc -- °C IR -- VR 10000 3 2 100 7 5 3 2 180° 360° 0 0 0.5 1.0 2.0 2.5 Average Output Current, IO -- A IT10434 IFSM -- t [SBD] 14 Surge Forward Current, IFSM(Peak) -- A 1.5 10 0.1 2 3 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 3 IT10275 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 No. A0961-5/6 VEC2822 Note on usage : Since the VEC2822 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No. A0961-6/6