SANYO VEC2822

VEC2822
Ordering number : ENA0961
SANYO Semiconductors
DATA SHEET
VEC2822
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Low switching noise.
• Low leakage current and high reliability due to planar structure.
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
VDSS
VGSS
--20
V
±10
V
ID
--3.5
A
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
--14
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
15
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
17
V
Marking : CY
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0307PE TI IM TC-00000899 No. A0961-1/6
VEC2822
Continued from preceding page.
Symbol
Conditions
Average Output Current
Parameter
IO
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
Ratings
Surge Forward Current
IFSM
Unit
2
50Hz sine wave, 1 cycle
A
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
Forward Transfer Admittance
VGS(off)
⏐yfs⏐
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--2A, VGS=--4.5V
ID=--1A, VGS=--2.5V
Input Capacitance
RDS(on)3
Ciss
ID=--0.3A, VGS=--1.8V
VDS=--10V, f=1MHz
Cutoff Voltage
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
td(off)
tf
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
--20
V
--0.4
3.5
--1
µA
±10
µA
--1.4
V
5.8
55
S
72
77
108
mΩ
112
168
mΩ
680
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
mΩ
pF
115
pF
80
pF
See specified Test Circuit.
12
ns
See specified Test Circuit.
57
ns
See specified Test Circuit.
68
ns
See specified Test Circuit.
58
ns
VDS=--10V, VGS=--4.5V, ID=--3.5A
VDS=--10V, VGS=--4.5V, ID=--3.5A
8.7
nC
1.5
nC
VDS=--10V, VGS=--4.5V, ID=--3.5A
IS=--3.5A, VGS=0V
1.8
nC
--0.83
--1.2
V
0.5
0.56
V
30
µA
[SBD]
Reverse Voltage
Forward Voltage
VR
VF
IR=0.2mA
IF=2A
Reverse Current
IR
Interterminal Capacitance
C
Reverse Recovery Time
trr
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Package Dimensions
0.25
0.3
27
7
6
2
3
ns
5
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
0.15
6 5
4
0.65
1
2
3
4
Top view
0.75
2.9
0.07
1
pF
10
2.3
0.25
2.8
8
7
V
Electrical Connection
unit : mm (typ)
7012-005
8
15
1 : Anode
2 : No Contact
3 : Drain
4 : Drain
5 : Source
6 : Gate
7 : Cathode
8 : Cathode
SANYO : VEC8
No. A0961-2/6
VEC2822
Switching Time Test Circuit
trr Test Circuit
[MOSFET]
[SBD]
Duty≤10%
VDD= --10V
100mA
ID= --2A
RL=5Ω
50Ω
VOUT
D
100Ω
10Ω
100mA
VIN
10µs
PW=10µs
D.C.≤1%
10mA
VIN
0V
--4.5V
--5V
G
trr
VEC2822
50Ω
ID -- VDS
--3.0
--2.0
--1.5
[MOSFET]
VDS= --10V
--6
--4.5
V
--2.5
ID -- VGS
--7
V
--1.8
--4.0
V
--3.5
[MOSFET]
--2.0V
VGS= --1.5V
--4
--3
--2
Ta
=
--1.0
--5
75
°C
--25
°C
--3.
5
V
--3.
0
--2 V
.5V
--4.0
Drain Current, ID -- A
S
Drain Current, ID -- A
P.G
25
°C
--1
--0.5
0
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
IT11954
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
[MOSFET]
160
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
IT06417
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
[MOSFET]
160
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
140
120
100
ID= --0.3A
--2.0A
80
60
40
20
0
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
--9
--10
IT11827
140
.3A
= --0
, ID
V
8
.
= --1
VGS
120
100
=
VGS
1.0
= -I
D
,
5V
--2.
A
A
--2.0
, I D=
V
5
.
= --4
VGS
80
60
40
20
--60
--40
--20
0
20
40
60
80
100
Case Temperature, Tc -- °C
120
140
160
IT11828
No. A0961-3/6
VEC2822
7
°C
--25
Ta=
5
C
75°
3
C
25°
2
2
5
3
7
2
--1.0
5
3
7
--10
IT06420
Drain Current, ID -- A
SW Time -- ID
5
[MOSFET]
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT06421
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS [MOSFET]
2
f=1MHz
1000
td(off)
100
7
tf
5
tr
3
2
td(on)
Ciss
7
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--0.1
7
5
3
2
--0.001
--0.2
2
5
3
2
Coss
100
Crss
7
10
5
7
5
--0.1
3
2
3
5
7
2
--1.0
3
5
Drain Current, ID -- A
7
0
3
2
--10
7
5
Drain Current, ID -- A
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
0
0
2
4
6
8
10
Total Gate Charge, Qg -- nC
PD -- Ta
IT13025
1.2
1.0
--6
--8
--10
--12
--14
--16
IDP= --14A
--18
--20
PW≤10µs
10
0µ
s
10m 1ms
s
ID= --3.5A
3
2
DC
--1.0
7
5
10
0m
op
era
3
2
tio
n(
Ta
=
s
25
Operation in this
area is limited by RDS(on).
°C
)
--0.1
7
5
3
2
--0.5
--4
Drain-to-Source Voltage, VDS -- V
IT06423
ASO
[MOSFET]
[MOSFET]
VDS= --10V
ID= --3.5A
--4.0
--2
IT06422
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
--1.0
7
5
3
2
VDD= --10V
VGS= --4.5V
3
Allowable Power Dissipation, PD -- W
VGS=0V
--0.01
7
5
3
2
1.0
7
--0.1
[MOSFET]
--25
°C
2
10
IS -- VSD
--10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
[MOSFET]
VDS= --10V
Ta=
75°
C
2 5°
C
⏐yfs⏐ -- ID
3
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2✕0.8mm) 1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT13019
[MOSFET]
M
ou
nt
0.8
ed
on
ac
er
am
ic
0.6
bo
ar
d(
12
00
m
0.4
m2
✕
0.8
m
0.2
m
)1
un
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13020
No. A0961-4/6
VEC2822
IF -- VF
10
7
5
[SBD]
Reverse Current, IR -- µA
1.0
7
5
3
2
0.1
7
5
25°
100 C
°C
75°C
50°
C
25°C
0°C
--25°C
Forward Current, IF -- A
2
2
75°C
10
50°C
1.0
25°C
0.1
0°C
--25°C
0.001
0.01
0.1
0.2
0.3
0.4
0.5
0.6
Forward Voltage, VF -- V
[SBD]
Rectangular
wave
1.4
(1)
(2) (4) (3)
θ
1.2
360°
Sine wave
1.0
0.8
180°
360°
0.6
0.4
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.2
0
0
0.5
1.0
1.5
2.0
2.5
Average Output Current, IO -- A
*Mounted on a ceramic
board (500mm2✕0.8mm),
Rth(j-a)=68°C/W
80
60
(4)
Rectangular
wave
θ
40
360°
(1)
(3)
(2)
Sine
wave
20
0.025
8
10
12
14
0.020
16
IT10277
PR(AV) -- VRM
[SBD]
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
wave
(1)
VR
0.015
(2)
θ
360°
(3)
Sine wave
0.010
VR
180°
(4)
360°
0.005
0
0
2
4
6
8
10
12
14
16
Peak Reverse Voltage, VRM -- V
IT10433
C -- VR
[SBD]
5
Interterminal Capacitance, C -- pF
100
6
Reverse Voltage, VR -- V
[SBD]
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
120
4
IT10432
Tc -- IO
140
2
IT10276
PF(AV) -- IO
1.6
0
0.7
Average Reverse Power Dissipation, PR(AV) -- mW
0
Average Forward Power Dissipation, PF(AV) -- W
100°C
100
0.01
Ta=
1
3
[SBD]
Ta=125°C
1000
3
Case Temperature, Tc -- °C
IR -- VR
10000
3
2
100
7
5
3
2
180°
360°
0
0
0.5
1.0
2.0
2.5
Average Output Current, IO -- A
IT10434
IFSM -- t
[SBD]
14
Surge Forward Current, IFSM(Peak) -- A
1.5
10
0.1
2
3
5
7
1.0
2
3
5
Reverse Voltage, VR -- V
7
10
2
3
IT10275
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00435
No. A0961-5/6
VEC2822
Note on usage : Since the VEC2822 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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This catalog provides information as of October, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0961-6/6