SCH2825 Ordering number : ENA1006 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS 30 V ±20 V ID 1.6 A 6.4 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Tch Mounted on a ceramic board (900mm2✕0.8mm) 1unit Channel Temperature Storage Temperature Tstg 0.6 W 150 °C --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage VRRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM IO 30 V Average Output Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg 0.5 A 3 A --55 to +125 °C --55 to +125 °C 50Hz sine wave, 1 cycle Marking : XA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1207PE TI IM TC-00001031 No. A1006-1/6 SCH2825 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=1mA, VGS=0V VDS=30V, VGS=0V VGS(off) ⏐yfs⏐ VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=800mA RDS(on)1 RDS(on)2 ID=800mA, VGS=10V ID=400mA, VGS=4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 30 V 1 µA ±10 µA 2.6 V 135 180 mΩ 230 330 mΩ 1.2 0.6 1.0 S VDS=10V, f=1MHz VDS=10V, f=1MHz 88 19 pF pF VDS=10V, f=1MHz See specified Test Circuit. 11 pF 3.4 ns See specified Test Circuit. 3.5 ns See specified Test Circuit. 10.6 ns See specified Test Circuit. 4.0 ns VDS=10V, VGS=10V, ID=1.6A VDS=10V, VGS=10V, ID=1.6A 2.0 nC 0.33 nC VDS=10V, VGS=10V, ID=1.6A IS=1.6A, VGS=0V 0.29 nC 0.82 1.2 V 0.42 0.48 V 120 µA [SBD] Reverse Voltage Forward Voltage VR VF IR=0.5mA IF=0.5A Reverse Current IR Interterminal Capacitance C Reverse Recovery Time trr VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Package Dimensions 30 V 13 pF 10 ns Electrical Connection unit : mm (typ) 7028-003 6 5 4 1 2 3 1.6 0.2 1.5 2 3 0.5 0.56 1 0.25 0.05 1.6 0.05 0.2 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 No. A1006-2/6 SCH2825 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=15V Duty≤10% ID=800mA RL=18.75Ω D 10µs VOUT PW=10µs D.C.≤1% 50Ω 100Ω 10Ω 100mA VIN 10mA 100mA VIN 10V 0V G --5V trr SCH2825 P.G 50Ω S ID -- VDS 4.0 6.0V 1.8 1.6 0.6 0.4 0.8 0.6 Ta= 7 0.4 3.0V 0.2 0.2 VGS=2.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0 1.0 Drain-to-Source Voltage, VDS -- V IT13107 RDS(on) -- VGS [MOSFET] 390 360 330 300 270 ID=0.4A 240 0.8A 210 180 150 120 90 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS -- V 14 16 IT13131 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V IT13108 RDS(on) -- Ta [MOSFET] 390 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 --25 °C 0.8 1.2 25° C 3.5V 15.0V 1.0 1.4 5°C Drain Current, ID -- A 1.2 [MOSFET] VDS=10V 10.0V 1.4 Drain Current, ID -- A 2.0 8.0V 1.6 ID -- VGS [MOSFET] V 1.8 360 330 300 4A =0. , ID V 4 = V GS 270 240 210 0.8A 180 , I D= =10V VGS 150 120 90 60 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT13132 No. A1006-3/6 SCH2825 ⏐yfs⏐ -- ID 2 3 2 [MOSFET] VGS=0V 1.0 7 5 3 2 --2 = Ta C 5° 75 0.1 7 5 °C 25 °C 3 2 3 2 0.1 7 5 Ta= --25 °C 25°C 75°C 1.0 7 5 3 2 0.01 7 5 3 2 0.01 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 SW Time -- ID 5 0.001 0.2 5 7 1.0 IT13111 Drain Current, ID -- A [MOSFET] Ciss, Coss, Crss -- pF td(off) 10 7 tf td(on) tr 3 0.6 0.8 1.0 1.2 f=1MHz 2 2 5 0.4 Diode Forward Voltage, VSD -- V IT13112 Ciss, Coss, Crss -- VDS [MOSFET] 3 VDD=15V VGS=10V 3 Switching Time, SW Time -- ns IS -- VSD [MOSFET] VDS=10V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 3 2 Ciss 100 7 5 3 Coss 2 Crss 10 7 1.0 0.1 5 2 3 5 7 2 1.0 3 Drain Current, ID -- A 8 10 7 5 7 3 2 6 5 4 1 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Total Gate Charge, Qg -- nC IT13133 PD -- Ta 0.7 0.6 2.0 15 20 25 IDP=6.4A 30 PW≤10µs 10 0µ 1m s s ID=1.6A DC 10 op m 10 er 0m ati on 3 2 2 0 10 IT13114 Drain-to-Source Voltage, VDS -- V ASO [MOSFET] 1.0 7 5 0.1 7 5 3 0 5 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V [MOSFET] VDS=10V ID=1.6A 9 Allowable Power Dissipation, PD -- W 0 IT13113 VGS -- Qg 10 5 Operation in this area is limited by RDS(on). s s (T a= 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13134 [MOSFET] M ou nt 0.5 ed on ac er 0.4 am ic bo ar 0.3 d (9 00 m 0.2 m2 ✕ 0. 8m m )1 0.1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13135 No. A1006-4/6 SCH2825 IF -- VF 1.0 [SBD] 7 Reverse Current, IR -- µA 2 0.1 7 25° C 100 °C 75°C 50°C 25°C 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 PF(AV) -- IO 0.35 0.6 [SBD] °C 100°C 1000 7 5 3 2 75°C 50°C 100 7 5 3 2 25°C 10 7 5 3 2 1.0 0 5 10 15 20 25 [SBD] IT07928 C -- VR 100 [SBD] f=1MHz Rectangular wave (1) 0.30 7 (2) (4) (3) θ 360° 0.25 Sine wave 0.20 180° 360° 0.15 0.10 (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.05 0 0 0.1 0.2 0.3 0.4 0.5 Average Output Current, IO -- A IFSM -- t 3.5 30 Reverse Voltage, VR -- V IT07927 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V Surge Forward Current, IFSM(Peak) -- A 5 Ta=12 10000 7 5 3 2 3 Ta= 1 Forward Current, IF -- A 5 IR -- VR 100000 7 5 3 2 0.6 IT08187 5 3 2 10 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 7 IT07891 [SBD] Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 No. A1006-5/6 SCH2825 Note on usage : Since the SCH2825 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice. PS No. A1006-6/6