FSS218 Ordering number : ENA0189A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS218 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID Drain Current (PW≤10s) ID Duty cycle≤1% Drain Current (PW≤10µs) IDP PD Duty cycle≤1% 32 A Mounted on a ceramic board (2000mm2✕0.8mm), PW≤10s 1.8 W Allowable Power Dissipation 8 A 8.5 A Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=35V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A RDS(on)1 RDS(on)2 ID=8A, VGS=10V ID=4A, VGS=4V Input Capacitance Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time Marking : S218 td(off) tf Ratings min typ Unit max 35 V 1 µA ±10 µA 2.5 V 20 26 mΩ 38 54 mΩ 1.5 5.4 9 S 1050 pF 200 pF VDS=10V, f=1MHz See specified Test Circuit. 140 pF 17 ns See specified Test Circuit. 65 ns See specified Test Circuit. 75 ns See specified Test Circuit. 45 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 40506 MS IM / 22406PA MS IM TB-00002038 No. A0189-1/4 FSS218 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A 19 Gate-to-Source Charge 3.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A 3.5 Diode Forward Voltage VSD IS=8A, VGS=0V nC 0.85 Package Dimensions unit : mm 7005-002 1.2 V Switching Time Test Circuit VDD=15V 5 10V 0V 1 4 0.2 1.5 1.8 MAX 0.43 1.27 0.595 ID=8A RL=1.875Ω VOUT D PW=10µs D.C.≤1% G 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain P.G 50Ω FSS218 S 0.1 5.0 VIN VIN 6.0 4.4 0.3 8 SANYO : SOP8 ID -- VDS V VDS=10V 14 3.3V 13 12 5 VGS=3.0V 4 3 2 11 10 9 8 7 6 75 °C 25°C --25 °C Drain Current, ID -- A 5.0V 6 ID -- VGS 15 3.5 6.0V 10.0V 8.0V 7 Drain Current, ID -- A 4.0V 8 5 4 Ta = 3 2 1 1 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 80 0.4 IT10720 3.6 4.0 IT10721 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 60 4A 50 ID=8A 40 30 20 10 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT10722 70 60 50 4A , I D= =4V S VG 40 =8A 10V, I D V GS= 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT10723 No. A0189-2/4 FSS218 Ta= 3 °C --25 7 5° 2 °C 25 C 1.0 5 2 3 5 7 2 1.0 3 5 7 10 IT10724 Drain Current, ID -- A 0.7 0.8 0.9 1.0 1.1 IT10725 f=1MHz td(off) 100 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.6 2 tf 3 td(on) 2 tr 10 Ciss 1000 7 5 3 Coss 2 Crss 7 5 100 7 3 0.1 2 3 5 7 2 1.0 3 5 7 Drain Current, ID -- A 0 2 10 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 2 4 6 10 8 12 14 16 Total Gate Charge, Qg -- nC 18 20 IT10728 PD -- Ta 2.0 4 6 8 10 12 10 7 5 3 2 IT10727 ASO ≤10µs IDP=32A 1m ID=8A DC s 10 m 0m s s 10 1.0 7 5 3 2 0.1 7 5 3 2 16 14 Drain-to-Source Voltage, VDS -- V VDS=10V ID=8A 9 2 IT10726 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 0.5 Ciss, Coss, Crss -- VDS 3 VDD=15V VGS=10V Allowable Power Dissipation, PD -- W 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.3 7 3 0.1 1.0 7 5 3 2 C 5 --25 ° 7 VGS=0V 10 7 5 3 2 Ta= 75° C 10 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 2 IS -- VSD 3 2 VDS=10V 25° C yfs -- ID 3 op 10 s era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT10729 M 1.8 ou nt 1.6 1.4 ed on ac er am ic 1.2 bo ar 1.0 d (2 00 0m 0.8 m2 ✕ 0. 0.6 8m m ), 0.4 0.2 PW ≤1 0 s 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10730 No. A0189-3/4 FSS218 Note on usage : Since the FSS218 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No. A0189-4/4