Ordering number : ENN7134A FW332 N-Channel and P-Channel Silicon MOSFETs FW332 Motor Driver Applications Preliminary • • • Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. unit : mm 2129 [FW332] 8 5 4 Specifications 0.595 1.27 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.2 1.8max 1 6.0 4.4 • Package Dimensions 0.3 Features SANYO : SOP8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Ratings Conditions N-channel P-channel Unit VDSS VGSS 30 --30 ±20 ±20 V V ID 4 --3 A 16 --12 IDP PD PW≤10µs, duty cycle≤1% Allowable Power Dissipation Total Dissipation PT Mounted on a ceramic board (2000mm2✕0.8mm) 1.7 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Mounted on a ceramic board (2000mm 2✕0.8mm)1unit A 1.4 W Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4A 30 V 1.0 3.7 Marking : W332 1 µA ±10 µA 2.4 5.3 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1502 TS IM TA-3869 / 11502 TS IM TA-3326 No.7134-1/6 FW332 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=4A, VGS=10V ID=2A, VGS=4V 55 70 mΩ 105 145 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 270 pF Output Capacitance Coss VDS=10V, f=1MHz 90 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 55 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 80 ns See specified Test Circuit. 25 ns tf See specified Test Circuit. 17 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 7.0 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 1.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.5 Diode Forward Voltage VSD IS=4A, VGS=0 nC 0.84 1.2 V --1 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance IGSS VGS(off) VGS=±16V, VDS=0 VDS=--10V, ID=--1mA yfs RDS(on)1 VDS=--10V, ID=--3A RDS(on)2 Ciss Input Capacitance ID=--1mA, VGS=0 VDS=--30V, VGS=0 --30 V --1.0 2.9 ±10 µA --2.4 V 4.2 S ID=--3A, VGS=--10V ID=--1.5A, VGS=--4V 90 115 mΩ 160 225 mΩ VDS=--10V, f=1MHz 370 pF Output Capacitance Coss VDS=--10V, f=1MHz 100 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 65 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 45 ns See specified Test Circuit. 30 ns tf See specified Test Circuit. 31 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 8.6 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 1.8 Diode Forward Voltage VSD IS=--3A, VGS=0 nC --0.85 --1.5 V Electrical Connection D1 D1 D2 D2 (Top view) S1 G1 S2 G2 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VDD= --15V VIN VIN 10V 0V ID=4A RL=3.75Ω VIN D PW=10µs D.C.≤1% VOUT 0V --10V D PW=10µs D.C.≤1% G P.G ID= --3A RL=5Ω VIN VOUT G FW332 50Ω S P.G FW332 50Ω S No.7134-2/6 FW332 ID -- VDS Drain Current, ID -- A VGS=3V 1.5 1.0 1.5 1.0 --25° C 2.0 2.0 Ta= 75°C 2.5 [Nch] 2.5 10V Drain Current, ID -- A 3.0 ID -- VGS 3.0 VDS=10V 8V 6V 3.5 [Nch] 4V 5V 4.0 0.5 25 °C 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V IT03321 RDS(on) -- VGS 250 0 1.0 RDS(on) -- Ta [Nch] 160 4.0 IT03322 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 200 150 4A ID=2A 100 50 0 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 100 =4V VGS 80 =10V , V GS I D=4A 60 40 20 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C [Nch] VDS=10V 160 IT04019 IF -- VSD 10 [Nch] VGS=0 7 5 5 2 2 -- Ta= 75° C 1.0 7 1.0 7 5 3 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A 100 2 2 5 2 3 Ta=75 °C 25°C --25°C C 25° 3 5°C Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 2A, I D= 0 --60 10 7 3 0.1 5 0 0.2 SW Time -- ID 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT04020 [Nch] 1.4 IT03326 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=10V [Nch] f=1MHz 7 5 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 120 IT04018 yfs -- ID 10 140 td(off) 3 2 tf 10 td(on) 7 tr 5 Ciss 3 2 100 Coss 7 Crss 5 3 3 2 2 1.0 10 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT04021 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT03328 No.7134-3/6 FW332 VGS -- Qg 10 3 2 10 7 5 Drain Current, ID -- A 8 6 4 2 3 4 5 6 7 Total Gate Charge, Qg -- nC DC 1.0 7 5 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(2000mm2✕0.8mm) 1unit 3 5 7 1.0 2 3 5 7 10 V --5. 0 2 3 5 IT04022 ID -- VGS [Pch] VDS= --10V 0V .0V = --3 VGS --2.5 --1.5 --1.0 --0.5 --2.0 --1.5 --1.0 --25 ° --0.5 0 0 0 --0.4 --0.2 --0.6 --0.8 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --3.0A 200 ID= --1.5A 150 100 50 0 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V yfs -- ID 10 --1.5 --2.0 --2.5 --3.0 --3.5 [Pch] 250 200 V --4 S= , VG 1.5A -I D= 150 = --10V A, V GS .0 I D= --3 100 50 0 --60 --10 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT04027 [Pch] VDS= --10V IF -- VSD --10 140 160 IT04028 [Pch] VGS=0 7 7 --4.0 IT04026 RDS(on) -- Ta [Pch] 250 --1 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 --0.5 IT04025 RDS(on) -- VGS 300 0 --1.0 Drain-to-Source Voltage, VDS -- V 5 ° --25 C Ta= 2 75° C 25° C 1.0 7 2 --1.0 7 5 3 2 5 3 --0.1 3 --25°C 3 C Forward Current, IF -- A 5 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 2 --3.0 Drain Current, ID -- A --2.0 n Operation in this area is limited by RDS(on). Drain-to-Source Voltage, VDS -- V [Pch] --4 . V --6.0 V --8. 0 --10. 0V --2.5 s op tio 3 2 0.01 0.1 8 ms 0m era IT03329 ID -- VDS --3.0 Drain Current, ID -- A 10 10 Ta= 75°C C 25°C 1 10 0 1m µs s ID=4A 3 2 0 <10µs 3 2 2 [Nch] IDP=16A Ta=7 5° Gate-to-Source Voltage, VGS -- V VDS=10V ID=4A 0 Forward Transfer Admittance, yfs -- S ASO [Nch] 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 IT04029 --0.1 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 --1.2 IT04030 No.7134-4/6 FW332 SW Time -- ID 100 1000 5 td(off) Ciss tf 2 10 td(on) 7 5 2 100 Coss 7 Crss 5 3 3 2 2 VDD= --15V VGS= --10V 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 10 0 7 [Pch] Drain Current, ID -- A --8 --4 --2 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 10 3 2 10 --1.0 7 5 ed on ac era m ic bo ard (2 0.8 00 0m m2 ✕0 .8m m 0.4 ) 0m s op era tio 3 2 n Operation in this area is limited by RDS(on). --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(2000mm2✕0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V PD -- Ta 2.0 Allowable Power Dissipation, PD -- W nt 1.2 ms 10 2 3 5 IT04034 [Nch, Pch] board(2000mm2✕0.8mm) Mounted on a ceramic ou --30 IT04032 <10µs 10 1m 0µs s DC IT04033 M 1.4 --25 [Pch] ID= --3A --0.01 --0.1 PD(FET 1) -- PD(FET 2) [Nch, Pch] 1.6 --20 IDP= --12A 3 2 0 --15 ASO 3 2 --10 7 5 --6 --10 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --3A 0 --5 IT04031 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 3 Ciss, Coss, Crss -- pF 3 tr Switching Time, SW Time -- ns 5 [Pch] f=1MHz 7 7 Allowable Power Dissipation(FET 1), PD -- W Ciss, Coss, Crss -- VDS [Pch] 1.7 1.6 1.4 To t 1.2 al di ss ip nit 0.8 ati on 1u 0.4 0 0 0 0.4 0.8 1.2 Allowable Power Dissipation(FET 2), PD -- W 1.4 1.6 IT04023 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04024 No.7134-5/6